16N65KG-TF2-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 16N65KG-TF2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
16N65K-MT
Preliminary
Power MOSFET
16A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 16N65K-MT is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 16N65K-MT is generally applied in high efficiency
switch mode power supplies, active power factor correction and
electronic lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 0.54Ω @ VGS = 10 V, ID = 8 A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Tube
Lead Free
Halogen Free
16N65KG-TF2-T
D: Drain S: Source
1
2
3
16N65KL-TF2-T
TO-220F2
G
D
S
Note: Pin Assignment: G: Gate
16N65KL-TF2-T
(1) T: Tube
(1)Packing Type
(2)Package Type
(3)Green Package
(2) TF2: TO-220F2
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
www.unisoniccom.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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16N65K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
ID
650
±30
V
Continuous (TC=25°C)
16 (Note 2)
64 (Note 2)
16
A
Drain Current
Pulsed (Note 3)
IDM
A
Avalanche Current (Note 3)
Avalanche Energy
IAR
A
Single Pulsed (Note 4)
Repetitive (Note 5)
EAS
EAR
dv/dt
780
mJ
mJ
V/ns
W
20
Peak Diode Recovery dv/dt (Note 5)
Power Dissipation (TC=25°C)
Linear Derating Factor above TC=25°C
Junction Temperature
4.5
62
PD
0.49
W/°C
°C
°C
TJ
+150
Storage Temperature
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 6.1mH, IAS = 16A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
5. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.0
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=650V, VGS=0V
DS=520V, VGS=0V, TC=125°C
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
650
V
1
µA
µA
Drain-Source Leakage Current
Gate- Source Leakage Current
V
10
Forward
Reverse
+100 nA
-100 nA
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.35 0.54
ꢀ
CISS
COSS
CRSS
1078
225
10
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
112
186
335
186
57
ns
ns
VDS=30V, ID=0.5A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
ns
ns
Total Gate Charge
QG
nC
nC
nC
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
15.4
15.8
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
16
64
A
A
V
ISM
VSD
IS=16A, VGS=0V
1.4
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-B14.d
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16N65K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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16N65K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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16N65K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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