12P10L-TM3-T [UTC]
9.4A, 100V P-CHANNEL POWER MOSFET; 输出高达9.4A ， 100V P沟道功率MOSFET
| 型号： | 12P10L-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 9.4A, 100V P-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12P10
Power MOSFET
9.4A, 100V P-CHANNEL
POWER MOSFET
DESCRIPTION
The 12P10 uses advanced proprietary, planar stripe, DMOS
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
FEATURES
* RDS(ON) = 0.29Ω @VGS = -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
12P10L-TM3-T
12P10L-TN3-R
12P10L-TQ2-R
12P10L-TQ2-T
12P10G-TM3-T
12P10G-TN3-R
12P10G-TQ2-R
12P10G-TQ2-T
TO-251
TO-252
TO-263
TO-263
G
G
G
G
D
D
D
D
Tube
Tape Reel
Tape Reel
Tube
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-262.B
12P10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-100
±30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
-9.4
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
-37.6
-9.4
A
IAR
A
EAS
370
mJ
mJ
V/ns
EAR
5.0
dv/dt
-6.0
TO-251/ TO-252
Power Dissipation
50
PD
W
TO-263
65
℃
℃
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
110
UNIT
TO-251/ TO-252
TO-263
℃/W
Junction to Ambient
Junction to Case
θJA
62.5
TO-251/ TO-252
TO-263
2.5
℃/W
θJC
2.31
UNISONIC TECHNOLOGIES CO., LTD
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12P10
Power MOSFET
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250µA
-100
-2.0
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=-250µA,Referenced to 25°C
-0.1
V/°C
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IDSS
IGSS
VDS=-100V, VGS=0V
VDS=0V, VGS=±30V
-1
±100 nA
VGS(TH)
VDS=VGS, ID=-250µA
-4.0
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=-10V, ID=-4.7A
0.24 0.29
6.3
gFS
VDS =-40V, ID=-4.7A (Note 1)
CISS
COSS
CRSS
620 800 pF
220 290 pF
Output Capacitance
VDS=-25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
65
85
pF
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
21
4.6
11.5
15
27
VDS=-80V, ID=-11.5A,
GS=-10V(Note 1, 2)
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
V
40
160 330 ns
35 80 ns
60 130 ns
VDD=-50V, ID=-11.5A,
RG=25Ω(Note 1, 2)
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
VGS=0V, IS=-9.4A
-4.0
-9.4
V
A
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-37.6
A
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-262.B
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12P10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Compliment of D.U.T.
(N-Channel)
VDD
* dv/dt controlled by RG
VGS
* ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
VGS=
IFM, Body Diode Forward Current
IRM
ISD
(D.U.T.)
di/dt
Body Diode Reverse Current
VDS
(D.U.T.)
VDD
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12P10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
VGS
Same Type
as D.U.T.
50kΩ
QG
12V
-10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
-3mA
Charge
Gate Charge Waveform
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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12P10
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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