12P10L-TMS-T [UTC]
P-CHANNEL POWER MOSFET;
| 型号： | 12P10L-TMS-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12P10
Power MOSFET
9.4A, 100V P-CHANNEL
POWER MOSFET
DESCRIPTION
The 12P10 uses advanced proprietary, planar stripe, DMOS
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
FEATURES
* RDS(ON) < 0.29Ω @VGS = -10V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
8
Lead Free
Halogen Free
12P10G-AA3-R
12P10G-TM3-T
12P10G-TMS-T
12P10G-TN3-R
12P10G-TND-R
12P10G-TQ2-R
12P10G-TQ2-T
12P10G-S08-R
1
2
D
D
D
D
D
D
D
S
3
S
S
S
S
S
S
S
S
4
-
5
-
6
-
7
-
12P10L-AA3-R
12P10L-TM3-T
12P10L-TMS-T
12P10L-TN3-R
12P10L-TND-R
12P10L-TQ2-R
12P10L-TQ2-T
12P10L-S08-R
SOT-223
TO-251
TO-251S
TO-252
TO-252D
TO-263
TO-263
SOP-8
G
G
G
G
G
G
G
S
-
-
Tape Reel
Tube
-
-
-
-
-
-
-
-
-
Tube
-
-
-
-
-
Tape Reel
Tape Reel
Tape Reel
Tube
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
G
D
D
D
D
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-262.G
12P10
Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
SOT-223
TO-251
TO-251S
TO-252
TO-252D
TO-263
SOP-8
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12P10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-100
±30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current
-9.4
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
IDM
-37.6
-9.4
A
IAR
A
EAS
280
mJ
mJ
EAR
5.0
TO-251/TO-251S
TO-252/TO-252D
TO-263
50
W
65
W
W
W
°С
°С
Power Dissipation
PD
SOT-223
8
5
SOP-8
Junction Temperature
Storage Temperature
TJ
+150
TSTG
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
110
UNIT
TO-251/TO-251S
TO-252/TO-252D
TO-263
°С/W
62.5
125
150
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
θJA
SOT-223
SOP-8
TO-251/TO-251S
TO-252/TO-252D
TO-263
2.5
°С/W
1.9
14
25
°С/W
°С/W
°С/W
θJC
SOT-223
SOP-8
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12P10
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0 V, ID=-250µA
DS=-100V, VGS=0V
-100
-2.0
V
V
-1
µA
µA
Drain-Source Leakage Current
VDS=-100V, TC=125°C
VDS=0V, VGS=±30V
-10
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
IGSS
±100 nA
VGS(TH)
VDS=VGS, ID=-250µA
-4.0
0.24 0.29
6.3
V
Ω
S
RDS(ON) VGS=-10V, ID=-4.7A
gFS
VDS =-40V, ID=-4.7A (Note 1)
CISS
COSS
CRSS
570 800 pF
115 290 pF
Output Capacitance
VDS=-25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
30
85
pF
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
21
4.6
4
27
VDS=-50V, ID=-1.3A,
GS=-10V(Note 1, 2)
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
V
30
40
64 100 ns
155 175 ns
VDD=-30V, ID=-0.5A,
RG=25Ω(Note 1, 2)
tD(OFF)
tF
70
90
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
VGS=0V, IS=-9.4A
-4.0
-9.4
V
A
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-37.6
A
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Note: 2. Essentially independent of operating temperature
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12P10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Compliment of D.U.T.
(N-Channel)
VDD
* dv/dt controlled by RG
VGS
* ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
IRM
ISD
(D.U.T.)
di/dt
Body Diode Reverse Current
VDS
(D.U.T.)
VDD
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12P10
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
tp
Time
VDD
VDS(t)
ID(t)
RG
VDD
IAS
-10V
D.U.T.
BVDSS
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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12P10
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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