UG2504W [UNITPOWER]
Dual N-Ch 20V Fast Switching MOSFETs; 双N沟道20V的快速开关MOSFET
| 型号： | UG2504W |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | Dual N-Ch 20V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The UG2504W is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDS(ON)
ID
20V
22mΩ
5.8A
Applications
The UG2504W meet the RoHS and Green
Product requirement with full function reliability
approved.
z Power management in portable and battery
operated products
z One cell battery pack protection
z Load Switch
Features
TSSOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
20
Units
Drain-Source Voltage
V
V
VGS
Gate-Source Voltage
±8
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
5.8
A
4.6
A
24
A
PD@TA=25℃
TSTG
Total Power Dissipation3
1.1
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
110
70
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
1
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Reference to 25℃, ID=1mA
GS=4.5V , ID=5A
Min.
20
---
---
---
---
0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
0.028
17
---
V/℃
V
22
28
44
1
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=2.5V , ID=4A
VGS=1.8V , ID=3A
22
35
VGS(th)
Gate Threshold Voltage
0.6
-3.21
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
---
mV/℃
VDS=16V , VGS=0V , TJ=25℃
VDS=16V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=5A
28
Rg
VDS=0V , VGS=0V , f=1MHz
1.5
14.8
1.44
2.8
3.2
40
3
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
20.7
2.0
VDS=15V , VGS=4.5V , ID=5A
nC
ns
Qgs
Qgd
Td(on)
Tr
3.9
6.4
VDD=10V , VGS=10V , RG=3.3Ω
80
ID=5A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
40.8
9.2
952
90
82
18.4
1333
126
111
Ciss
Coss
Crss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
79
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
5.8
24
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
---
V
---
8.9
2.9
nS
nC
IF=5A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
50
ID=5A
40
30
20
10
1
2
3
4
5
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
6
4
2
0
T =150
T =25
℃
J
℃
J
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.5 VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UG2504W
Dual N-Ch 20V Fast Switching MOSFETs
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
PDM
TON
T
SINGLE
D = TON/T
TJpeak = TC+PDMXRθJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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