KC857T [TYSEMI]
Low current, Low voltage; 低电流，低电压
| 型号： | KC857T |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low current, Low voltage |
| 文件： | 总1页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
KC857T(BC857T)
SOT-523
+0.1
1.6
-0.1
Unit: mm
+0.1
1.0
-0.1
Features
+0.05
0.2
-0.05
+0.01
0.1
-0.01
Low current (max. 100 mA)
Low voltage (max. 45 V).
2
1
3
+0.25
0.3
-0.05
+0.1
0.5
-0.1
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
power dissipation
Symbol
VCBO
VCEO
VEBO
IC
Rating
-50
Unit
V
-45
V
-5
V
-100
mA
mA
mW
ICM
-200
PD
150
Junction temperature
Storage temperature
Tj
150
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
Unit
nA
A
IE = 0; VCB =- 30 V
-15
-5
collector cut-off current
IE = 0; VCB = -30 V; Tj = 150
IC = 0; VEB = -5 V
emitter cut-off current
KC857AT
IEBO
-100
250
nA
125
220
420
DC current gain
hFE
IC = -2 mA; VCE = -5 V
KC857BT
KC857CT
475
800
IC = -10 mA; IB = -0.5 mA
-200 mV
-400 mV
collector-emitter saturation voltage
base-emitter voltage
VCEsat
VBE
IC = -100 mA; IB =- 5 mA; *
IC = -2 mA; VCE = -5 V
IC = -10 mA; VCE = -5 V
-600
-750
-820
2.5
mV
mV
pF
collector capacitance
emitter capacitance
Cc
Ce
IE = ie = 0; VCB = -10 V; f = 1 MHz
IC = ic = 0; VEB = -500 mV; f = 1 MHz
10
pF
IC = -200 A; VCE = -5 V; RS = 2 k ;f =
1 kHz; B = 200 Hz
noise figure
F
10
dB
transition frequency
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz
100
MHz
* Pulse test: tp
300 ms;
0.02.
Marking
NO.
KC857AT
3E
KC857BT
3F
KC857CT
3G
Marking
http://www.twtysemi.com
1 of 1
sales@twtysemi.com
4008-318-123
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