KC860W [KEXIN]
PNP General Purpose Transistors; PNP通用晶体管
| 型号： | KC860W |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP General Purpose Transistors |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP General Purpose Transistors
KC860W(BC860W)
Features
Low current (max. 100 mA)
Low voltage (max. 45 V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-50
Unit
V
Collector-Emitter Voltage
-45
V
Emitter-Base Voltage
-5
V
Collector Current DC
-100
mA
mA
mA
mW
K/W
Peak collector current
ICM
-200
Peak base current
IBM
-200
Power Dissipation
PD
200
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
R
JA
625
TJ, Tstg
-65 to +150
1
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SMD Type
Transistors
KC860W(BC860W)
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
-15
Unit
nA
A
VCB =- 30 V, IE = 0
VCB =- 30 V, IE = 0, TA = 150
IC=0,VEB=-5V
Collector-Cutoff Current
Emitter- cutoff current
-4
IEBO
-100
800
475
800
-300
-650
nA
KC860W
220
220
420
DC Current Gain
hFE
IC = -2.0 mA, VCE = -5.0 V
KC860BW
KC860CW
IC = -10 mA, IB =- 0.5 mA
IC = -100 mA, IB =- 5.0 mA
IC = -2mA, IB=-5A
mV
mV
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat)
VBE
-600
-750 m V
-820 m V
IC = -10 mA, IB=-5A
Collector capacitance
Emitter capacitance
Cc
Ce
IE = ie = 0; VCB = -10 V; f = 1 MHz
IC = ic = 0; VEB = -500 mV; f = 1 MHz
5
pF
pF
10
IC = -200 A; VCE = -5 V; RS = 2 k ;f =
10 Hz to 15.7 kHz
4
4
dB
Noise figure
F
IC=-200 A; VCE = -5 V; RS = 2 k ;f =
1 kHz; B = 200 Hz
dB
Transition frequency
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz
100
MHz
Marking
NO.
KC860W
4H
KC860BW
4F
KC860CW
4G
Marking
2
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