IRLML9303TRPBF [TYSEMI]
RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly; 不含铅，无溴，无卤素环保RoHS标准
| 型号： | IRLML9303TRPBF |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | RoHS compliant containing no lead, no bromide and no halogen Environmentally friendly |
| 文件： | 总2页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
IRLML9303TRPbF
HEXFET® Power MOSFET
VDS
-30
V
V
VGS Max
± 20
RDS(on) max
(@VGS = -10V)
165
270
m
RDS(on) max
(@VGS = -4.5V)
TM
m
Micro3 (SOT-23)
IRLML9303TRPbF
Application(s)
System/Load Switch
Features and Benefits
Features
Benefits
Industry-standard pinout
Multi-vendor compatibility
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
V
VDS
-30
-2.3
-1.8
-12
Drain-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
A
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
1.25
0.80
0.01
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
W
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
100
Units
RJA
Junction-to-Ambient
°C/W
RJA
–––
99
Junction-to-Ambient (t<10s)
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Product specification
IRLML9303TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
2.3
–––
-3.7
135
220
–––
–––
–––
–––
–––
21
–––
V
VGS = 0V, ID = -250μA
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient
––– mV/°C Reference to 25°C, ID = -1mA
165
270
-2.4
1.0
VGS = -10V, ID = -2.3A
VGS = -4.5V, ID = -1.8A
VDS = VGS, ID = -10μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
m
VGS(th)
IDSS
V
Drain-to-Source Leakage Current
μA
150
-100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
nA
VGS = 20V
RG
gfs
Qg
–––
2.0
0.57
1.2
7.5
14
S
VDS = -10V, ID =-2.3A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = -2.3A
VDS =-15V
VGS = -4.5V
VDD =-15V
ID = -1.0A
RG = 6.8
VGS = -4.5V
VGS = 0V
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
Rise Time
td(off)
tf
Turn-Off Delay Time
9.0
8.6
160
39
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF VDS = -25V
ƒ = 1.0KHz
Reverse Transfer Capacitance
25
Source - Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
D
S
–––
–––
–––
-1.3
(Body Diode)
showing the
integral reverse
A
G
ISM
Pulsed Source Current
–––
-12
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
12
-1.2
18
V
TJ = 25°C, IS = -1.3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
ns TJ = 25°C, VR = -24V, IF=-1.3A
di/dt = 100A/μs
nC
Qrr
5.3
8.0
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