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IRLMS1503PBF-1_15 [INFINEON]

Compatible with Existing Surface Mount Techniques;
IRLMS1503PBF-1_15
型号： IRLMS1503PBF-1_15
厂家： Infineon    Infineon
描述：

Compatible with Existing Surface Mount Techniques
文件： 总8页 (文件大小：197K)
中文：  中文翻译
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IRLMS1503PbF-1  
HEXFET® Power MOSFET  
VDS  
30  
V
A
1
2
6
D
D
D
RDS(on) max  
(@VGS = 10V)  
RDS(on) max  
(@VGS = 4.5V)  
Qg (typical)  
ID  
0.10  
5
Ω
D
0.20  
6.4  
3
4
G
S
nC  
A
Micro6™  
Top View  
3.2  
(@TA = 25°C)  
Features  
Benefits  
Industry-standard pinout Micro-6 Package  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
⇒
MSL1, Industrial qualification  
Standard Pack  
Base Part Number  
Package Type  
Micro6  
Orderable Part Number  
IRLMS1503TRPbF-1  
Form  
Quantity  
IRLMS1503TRPbF-1  
Tape and Reel  
3000  
™
Absolute Maximum Ratings  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
Max.  
3.2  
2.6  
18  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
A
PD @TA = 25°C  
Power Dissipation  
1.7  
13  
W
mW/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
± 20  
5.0  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
V/ns  
°C  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Min.  
Typ.  
Max  
Units  
RθJA  
Maximum Junction-to-Ambient „  
–––  
–––  
75  
°C/W  
1
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June 30, 2014  
IRLMS1503PbF-1  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
30 ––– –––  
V
VGS = 0V, ID = 250µA  
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA  
––– ––– 0.100  
––– ––– 0.20  
1.0 ––– –––  
1.1 ––– –––  
––– ––– 1.0  
––– ––– 25  
––– ––– -100  
––– ––– 100  
––– 6.4 9.6  
––– 1.1 1.7  
––– 1.9 2.8  
––– 4.6 –––  
––– 4.4 –––  
––– 10 –––  
––– 2.0 –––  
––– 210 –––  
––– 90 –––  
––– 32 –––  
VGS = 10V, ID = 2.2A ƒ  
VGS = 4.5V, ID = 1.1A ƒ  
VDS = VGS, ID = 250µA  
VDS = 10V, ID = 1.1A  
VDS = 24V, VGS = 0V  
VDS = 24V, VGS = 0V, TJ = 125°C  
VGS = -20V  
RDS(on)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 20V  
Qg  
ID = 2.2A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
nC VDS = 24V  
VGS = 10V, See Fig. 6 and 9 ƒ  
VDD = 15V  
RiseTime  
ID = 2.2A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 6.0Ω  
RD = 6.7Ω, See Fig. 10 ƒ  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
S
IS  
–––  
–––  
–––  
1.7  
18  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
–––  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– 1.2  
V
TJ = 25°C, IS = 2.2A, VGS = 0V ƒ  
TJ = 25°C, IF = 2.2A  
––– 36  
––– 39  
54  
58  
ns  
nC  
Qrr  
di/dt = 100A/µs ƒ  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
max. junction temperature. ( See fig. 11 )  
‚ ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS  
,
„ Surface mounted on FR-4 board, t ≤ 5sec.  
TJ ≤ 150°C  
2
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June 30, 2014  
IRLMS1503PbF-1  
100  
10  
1
100  
10  
1
VGS  
15V  
VGS  
15V  
TOP  
TOP  
10V  
10V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
7.0V  
5.5V  
4.5V  
4.0V  
3.5V  
BOTTOM3.0V  
BOTTOM3.0V  
3.0V  
3.0V  
20μs PULSE WIDTH  
J
20μs PULSE WIDTH  
T = 25 C  
J
°
T = 150 C  
°
0.1  
0.1  
0.1  
0.1  
1
10  
1
10  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
100  
2.0  
1.5  
1.0  
0.5  
0.0  
2.2A  
=
I
D
°
T = 25 C  
J
10  
°
T = 150 C  
J
1
V
= 10V  
DS  
20μs PULSE WIDTH  
V
=10V  
GS  
0.1  
3.0  
4.0  
5.0  
6.0 7.0  
8.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature( C)  
J
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs.Temperature  
3
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June 30, 2014  
IRLMS1503PbF-1  
20  
16  
12  
8
350  
300  
250  
200  
150  
100  
50  
I
D
= 2.2A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
C
SHORTED  
iss  
gs  
V
V
= 24V  
= 15V  
DS  
DS  
C
= C  
gd  
rss  
C
= C + C  
ds  
oss  
gd  
C
iss  
C
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE9  
0
0
0
2
4
6
8
10  
1
10  
100  
Q , Total Gate Charge (nC)  
G
V
, Drain-to-Source Voltage (V)  
DS  
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10us  
100us  
1ms  
10  
°
T = 150 C  
J
°
T = 25 C  
J
1
10ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
V
= 0 V  
J
GS  
1.4  
0.1  
0.4  
0.1  
0.6  
0.8  
1.0  
1.2  
1.6  
1
10  
100  
V
,Source-to-Drain Voltage (V)  
SD  
V
, Drain-to-Source Voltage (V)  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
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June 30, 2014  
IRLMS1503PbF-1  
RD  
VDS  
Q
G
10V  
VGS  
D.U.T.  
Q
Q
GD  
GS  
RG  
+ VDD  
-
V
G
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Charge  
Fig 9a. Basic Gate Charge Waveform  
Fig 10a. Switching Time Test Circuit  
Current Regulator  
Same Type as D.U.T.  
V
DS  
50KΩ  
90%  
.2μF  
12V  
.3μF  
+
V
DS  
D.U.T.  
-
10%  
V
GS  
V
GS  
t
t
r
t
t
f
3mA  
d(on)  
d(off)  
I
I
D
G
Current Sampling Resistors  
Fig 9b. Gate Charge Test Circuit  
Fig 10b. Switching Time Waveforms  
100  
D = 0.50  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
P
2
DM  
1
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
5
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June 30, 2014  
IRLMS1503PbF-1  
Peak Diode Recovery dv/dt Test Circuit  
+
ƒ
-
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple ≤ 5%  
* VGS = 5V for Logic Level Devices  
Fig 13. For N-channel HEXFET® power MOSFET s  
6
www.irf.com © 2014 International Rectifier  
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June 30, 2014  
IRLMS1503PbF-1  
Micro6 (SOT23 6L) Package Outline  
Dimensions are shown in milimeters (inches)  
LEAD ASSIGNMENTS  
RECOMMENDED FOOTPRINT  
3.00 (.118 )  
-B-  
2.80 (.111 )  
2X 0.95 (.0375 )  
D
D
S
1.75 (.068 )  
1.50 (.060 )  
6
1
5
2
4
3
6X (1.06 (.042 )  
3.00 (.118 )  
2.60 (.103 )  
6
1
5
4
-A-  
2.20 (.087 )  
2
3
D
G
D
0.95 ( .0375 )  
2X  
0.50 (.019 )  
6X  
6X 0.65 (.025 )  
0.35 (.014 )  
0.15 (.006 ) M C A S B S  
O
0O -10  
0.20 (.007 )  
0.09 (.004 )  
6X  
1.30 (.051 )  
0.90 (.036 )  
1.45 (.057 )  
0.90 (.036 )  
-C-  
0.10 (.004 )  
SURFACES  
0.15 (.006 )  
MAX.  
0.60 (.023 )  
0.10 (.004 )  
6
NOTES :  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.  
2. CONTROLLING DIMENSION : MILLIMETER.  
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).  
Micro6 (SOT23 6L) Part Marking Information  
W= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR  
WORK  
WEEK  
YEAR  
Y
W
Y = YEAR  
W = WEEK  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
1
2
3
4
5
6
7
8
9
0
01  
02  
03  
04  
A
B
C
D
PART NUMBER  
LOT  
CODE  
TOP  
24  
25  
26  
X
Y
Z
PART NUMBER CODE REFERENCE:  
A = IRLMS 1902  
B = IRLMS 1503  
C = IRLMS 6702  
D = IRLMS5703  
E = IRLMS 6802  
F = IRLMS4502  
G = IRLMS2002  
H = IRLMS6803  
W= (27-52) IF PRECEDED BY ALETTER  
WORK  
YEAR  
Y
WEEK  
W
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
A
B
C
D
E
27  
28  
29  
30  
A
B
C
D
F
G
H
J
Note: A li ne above the work week  
(as shown here) indicates Lead-Free.  
K
50  
51  
52  
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
7
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
June 30, 2014  
IRLMS1503PbF-1  
Micro6 Tape & Reel Information (Dimensions are shown in milimeters (inches))  
8mm  
4mm  
FEED DIRECTION  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
Qualification information†  
Industrial  
(per JEDEC JESD47F†† guidelines)  
Qualification level  
MS L 1  
™
Micro6  
Moisture Sensitivity Level  
RoHS compliant  
(per JEDEC J-S TD-020D††  
Yes  
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability  
†† Applicable version of JEDEC standard at the time of product release  
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA  
To contact International Rectifier, please visit http://www.irf.com/whoto-call/  
8
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
June 30, 2014  

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