IRLMS2002TR [INFINEON]
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;
| 型号： | IRLMS2002TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 93758D
IRLMS2002
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 2.5V Rated
A
1
2
6
D
D
D
VDSS = 20V
5
D
3
4
G
S
RDS(on) = 0.030Ω
Top View
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It'suniquethermaldesignandRDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
6.5
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
5.2
A
20
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 12
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
RθJA
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1
01/13/03
IRLMS2002
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.045
0.60 ––– 1.2
13 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 4.5V, ID = 6.5A
GS = 2.5V, ID = 5.2A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 10V, ID = 6.5A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = -12V
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 12V
Qg
––– 15
22
ID = 6.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.2 3.3
––– 3.5 5.3
––– 8.5 –––
––– 11 –––
––– 36 –––
––– 16 –––
––– 1310 –––
––– 150 –––
––– 36 –––
nC VDS = 10V
VGS = 5.0V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 10Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
2.0
20
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
––– 19
––– 13
29
20
ns
TJ = 25°C, IF = 1.7A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRLMS2002
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
BOTTOM1.50V
1.50V
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
5.3A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= 15V
20µs PULSE WIDTH
DS
V
=4.5V
GS
1
1.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
2.5
3.0 3.5
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRLMS2002
2000
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
6.5A
=
I
D
GS
C
= C + C
iss
gs
gd ,
V
= 10V
DS
C
= C
rss
gd
C
= C + C
1600
1200
800
400
0
oss
ds
gd
C
iss
6
4
2
C
C
oss
rss
0
0
4
8
12
16
20
24
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.1
0.4
1
10
100
0.6
0.8
1.0
1.2
V , Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRLMS2002
0.20
0.10
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.00
Id = 250µA
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100 125 150
25
50
75
100
125
150
°
T , Case Temperature ( C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Typical Vgs(th) Variance Vs.
Case Temperature
Juction Temperature
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t / t
1
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS2002
0.10
0.08
0.06
0.04
0.02
0.040
0.035
0.030
0.025
0.020
VGS= 2.5V
Id = 5.3A
VGS = 4.5V
30 40
0
10
I
20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
- Drain Current (A )
V
Gate -to -Source Voltage ( V )
D,
GS,
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
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IRLMS2002
Micro6 Package Outline
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
-B-
2.80 (.111 )
2X 0.95 (.0375 )
2.20 (.087 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
3
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
2
3
D
G
D
0.95 ( .0375 )
2X
0.50 (.019 )
0.35 (.014 )
6X
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
0O -10
O
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051 )
0.90 (.036 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 P
Micro6 Tape & Reel Information
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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7
IRLMS2002
Micro6 Part Marking Information
Notes: This part marking information applies to devices produced before 02/26/2001
EXAMPLE: THIS IS AN IRLMS6702
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
WE E K
YEAR
Y
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
DATE
CODE
TOP
WAF E R L OT
NUMBER CODE
24
25
26
X
Y
Z
BOTTOM
WW = (27-52) IF PRECEDED BYA LETTER
WORK
PART NUMBER CODE REFERENCE:
2A = IRLMS 1902
2B = IRLMS1503
2C = IRLMS6702
2D = IRLMS 5703
2E = IRLMS6802
2F = IRLMS 4502
2G = IRLMS 2002
2H = IRLMS6803
YEAR
Y
WE E K
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
DAT E CODE EXAMPLES:
K
50
51
X
Y
YWW = 9603 = 6C
YWW = 9632 = FF
Notes: This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BYLAST DIGIT OF CALENDAR YEAR
WOR K
WEEK
YEAR
Y
W
Y = YEAR
W = WE EK
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
PART NUMBER
LOT
CODE
TOP
24
25
26
X
Y
Z
PART NUMBER CODE REFERENCE:
A = I RL MS 1902
B = IRLMS1503
C = IR LMS 6702
D = IRLMS5703
E = IRLMS6802
F = IRLMS4502
G = IR L MS 2002
H = IRLMS6803
W = (27-52) IF PRECEDED BY ALETTER
WOR K
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/03
8
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