FZT788B [TYSEMI]
Low equivalent on-resistance; RCE(sat) 93mà at 3A, Gain of 300 at IC=2 Amps and Very low saturation voltage; 低等效导通电阻; RCE （SAT） 93mà ？在3A ， 300在IC = 2安培增益和极低的饱和电压
| 型号： | FZT788B |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low equivalent on-resistance; RCE(sat) 93mà at 3A, Gain of 300 at IC=2 Amps and Very low saturation voltage |
| 文件： | 总2页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
Product specification
FZT788B
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
Low equivalent on-resistance; RCE(sat) 93mÙ at 3A.
Gain of 300 at IC=2 Amps and Very low saturation voltage.
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 base
1
2
3
+0.1
0.70
-0.1
2.9
2 collector
3 emitter
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
-15
-15
-5
Unit
V
VCBO
VCEO
VEBO
ICM
Collector-emitter voltage
Emitter-base voltage
V
V
Continuous collector current
-8
A
Peak pulse current
IC
-3
2
A
Power dissipation
Ptot
W
Operating and storage temperature range
Tj,Tstg
-55 to +150
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
Transistors
Product specification
FZT788B
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-15
-15
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter Cut-Off Current
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
V
V
ICBO
IEBO
VCB=-10V
VEB=-4V
-0.1
-0.1
ìA
ìA
IC=-0.5A, IB=-2.5mA
IC=-1A, IB=-5mA
IC=-2A, IB=-10mA
IC=-3A, IB=-50mA
-0.15
-0.25
-0.45
-0.5
Collector-emitter saturation voltage *
VCE(sat)
V
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=-1A, IB=-5mA
VBE(on) IC=-1A, VCE=-2V
IC=-10mA,VCE=-2V *
-0.9
V
V
-0.75
500
400
300
150
100
1500
IC=-1A, VCE=-2V*
hFE
IC=-2A, VCE=-2V*
Static Forward Current Transfer Ratio
IC=-6A, VCE=-2V*
Transitional frequency
Input capacitance
Output capacitance
Turn-on time
fT
IC=-50mA, VCE=-5V, f=50MHz
MHz
pF
Cibo
Cobo
t(on)
t(off)
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
225
25
pF
35
ns
Turn-off time
400
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT788B
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
4008-318-123
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