FZT790A [FAIRCHILD]
PNP Low Saturation Transistor; PNP低饱和晶体管
| 型号： | FZT790A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP Low Saturation Transistor |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discrete Power & Signal
Technologies
July 1998
FZT790A
C
E
C
B
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FZT790A
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Units
Collector-Emitter Voltage
40
V
Collector-Base Voltage
Emitter-Base Voltage
50
V
V
5
Collector Current - Continuous
3
A
Operating and Storage Junction Temperature Range
-55 to +150
°C
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FZT790A
Total Device Dissipation
2
W
PD
Thermal Resistance, Junction to Ambient
62.5
°C/W
RqJA
ã
1998 Fairchild Semiconductor Corporation
Page 1 of 2
fzt790a.lwpPrPA 7/10/98 revB
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
40
50
5
V
V
V
BVCEO
BVCBO
BVEBO
ICBO
IC = 10 mA
IC = 100 mA
IE = 100 mA
100
10
nA
uA
VCB = 30 V
VCB = 30 V, TA=100°C
Emitter Cutoff Current
100
nA
IEBO
VEB = 4V
ON CHARACTERISTICS*
DC Current Gain
hFE
300
250
200
150
800
-
IC = 10 mA, VCE = 2 V
IC = 500 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
Collector-Emitter Saturation Voltage
250
450
750
mV
VCE(sat)
IC = 500 mA, IB = 5 mA
IC = 1 A, IB = 10 mA
IC = 2 A, IB = 50 mA
Base-Emitter Saturation Voltage
1
V
-
VBE(sat)
IC = 1 A, IB = 10 mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
100
IC = 50 mA,VCE = 5 V, f=50MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Page 2 of 2
fzt790a.lwpPrPA 7/10/98 revB
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