BCP69-16 [TYSEMI]
High current. Three current gain selections. 1.4 W total power dissipation.; 大电流。三个电流增益选择。 1.4 W的总功耗。
| 型号： | BCP69-16 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High current. Three current gain selections. 1.4 W total power dissipation. |
| 文件： | 总2页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
BCP69
SOT-223
Unit: mm
Features
+0.2
3.50
-0.2
+0.2
6.50
-0.2
High current.
Three current gain selections.
1.4 W total power dissipation.
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 base
1
2
3
+0.1
0.70
-0.1
2.9
2 collector
3 emitter
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-32
-20
-5
Unit
V
V
V
Collector current (DC)
Peak collector current
Peak base current
-1
A
ICM
-2
A
IBM
-200
mA
Total power dissipation
* 1
* 2
* 3
0.625
1
W
W
W
Ptot
1.4
Storage temperature
Tstg
Tj
-65 to +150
150
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
Tamb
-65 to +150
* 1
* 2
* 3
200
125
89
K/W
K/W
K/W
K/W
Rth(j-a)
Thermal resistance from junction to solder point
Rth(j-s)
15
*1 Device mounted on a FR4 PCB; single-sided copper; tinplated; standard footprint -for SOT223.
*2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm2 collector mounting pad.
*3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm2 collector mounting pad.
4008-318-123
http://www.twtysemi.com
1 of 2
sales@twtysemi.com
TransistIoCrs
Product specification
BCP69
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
IE = 0 A; VCB = -25 V
Min
Typ
Max
-100
-10
Unit
nA
Collector cutoff current
ìA
nA
IE = 0 A; VCB = -25 V; Tj = 150
IC = 0 A; VEB = -5 V
Emitter cutoff current
DC current gain
IEBO
-100
BCP69
VCE = -10 V; IC = -5 mA
VCE = -1 V; IC = -500 mA
VCE = -1 V; IC = -1 A
50
85
375
hFE
60
BCP69-16
BCP69-16/IN
BCP69-25
100
140
160
250
230
375
-500
-700
-1
VCE = -1 V; IC = -500 mA
VCEsat
Collector-emitter saturation voltage
IC = -1 A; IB = -100 mA;
mV
mV
V
VCE = -10 V; IC = -5 mA
VCE = -1 V; IC = -1 A
Base-emitter voltage
VBE
Collector capacitance
Transition frequency
Cc
fT
IE = ie = 0 A; VCB = -10 V; f = 1 MHz
28
pF
IC = -50 mA; VCE = -5 V; f = 100 MHz 40
140
MHz
hFE Classification
TYPE
BCP69
BCP69
BCP69-16
BCP69/16
BCP69-16/IN
69-16N
BCP69-25
BCP69/25
Marking
4008-318-123
http://www.twtysemi.com
2 of 2
sales@twtysemi.com
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