BCP69-16/DG [NXP]
20 V, 1 A PNP medium power transistor; 20 V ，1 A PNP中功率晶体管
| 型号： | BCP69-16/DG |
| 厂家： | 
NXP |
| 描述： | 20 V, 1 A PNP medium power transistor |
| 文件： | 总13页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP69
20 V, 1 A PNP medium power transistor
Rev. 06 — 2 December 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Type number[1]
Package
NXP
Package
configuration
JEITA
BCP69
SOT223
SC-73
medium power
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
[1] /DG: halogen-free
1.2 Features
I High current
I Three current gain selections
I 1.4 W total power dissipation
I Medium power SMD plastic package
1.3 Applications
I Linear voltage regulators
I High-side switches
I Supply line switches
I MOSFET drivers
I Audio preamplifier
1.4 Quick reference data
Table 2.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
−20
−1
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
-
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
−2
A
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
Table 2.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
hFE
DC current gain
VCE = −1 V;
IC = −500 mA
BCP69
85
-
-
375
250
BCP69-16
100
BCP69-16/DG
BCP69-16/IN
BCP69-25
140
160
-
-
230
375
2. Pinning information
Table 3.
Pinning
Description
Pin
1
Simplified outline
Graphic symbol
base
4
2, 4
2
collector
emitter
collector
3
1
4
1
2
3
3
sym028
3. Ordering information
Table 4.
Ordering information
Type number[1]
Package
Name
Description
Version
BCP69
SC-73
plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
[1] /DG: halogen-free
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
2 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
4. Marking
Table 5.
Marking codes
Type number[1]
Marking code
BCP69
BCP69
BCP69-16
BCP69/16
BCP69-16D
69-16N
BCP69-16/DG
BCP69-16/IN
BCP69-25
BCP69/25
[1] /DG: halogen-free
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min
Max
−32
−20
−5
Unit
V
VCBO
VCEO
VEBO
IC
collector-base voltage
-
-
-
-
-
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
−1
A
ICM
peak collector current
single pulse;
−2
A
tp ≤ 1 ms
IBM
Ptot
peak base current
single pulse;
tp ≤ 1 ms
-
−200
mA
[1]
[2]
[3]
total power dissipation
Tamb ≤ 25 °C
-
0.625
1
W
W
W
°C
°C
°C
-
-
1.4
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
Tamb
Tstg
−65
−65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
3 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
mle311
1.6
(1)
P
tot
(W)
1.2
(2)
(3)
0.8
0.4
0
−65
−5
55
115
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 7.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from junction in free air
to ambient
-
-
-
-
-
-
-
-
200
125
89
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from junction
to solder point
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
4 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
006aab402
2
10
duty cycle = 1
0.75
R
th(j-a)
0.5
(K/W)
0.33
0.2
10
0.1
0.05
0.02
t
0.01
0
1
P
δ =
t
1
2
t
t
1
t
2
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
5 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
−100
−10
Unit
nA
ICBO
collector-base cut-off
VCB = −25 V; IE = 0 A
-
-
-
-
current
VCB = −25 V; IE = 0 A;
Tj = 150 °C
µA
IEBO
hFE
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
DC current gain
BCP69
VCE = −10 V;
IC = −5 mA
50
85
-
-
-
VCE = −1 V;
375
IC = −500 mA
VCE = −1 V; IC = −1 A
60
-
-
-
BCP69-16
VCE = −1 V;
100
250
BCP69-16/DG
IC = −500 mA
BCP69-16/IN
VCE = −1 V;
IC = −500 mA
140
-
-
-
-
230
BCP69-25
VCE = −1 V;
IC = −500 mA
160
375
VCEsat
VBE
collector-emitter
saturation voltage
IC = −1 A;
IB = −100 mA
-
-
−500
−700
mV
mV
base-emitter voltage
VCE = −10 V;
IC = −5 mA
VCE = −1 V; IC = −1 A
-
-
-
−1
V
Cc
collector capacitance
transition frequency
VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
28
-
pF
fT
VCE = −5 V;
IC = −50 mA;
f = 100 MHz
40
140
-
MHz
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
6 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
006aab403
mle305
−2.4
C
3
10
I
(A)
−2.0
I
(mA) = −18.0
B
h
FE
−16.2
−12.6
−14.4
−10.8
−1.6
−1.2
−0.8
−9.0
−5.4
−7.2
−3.6
−0.4
−1.8
2
0
10
−10
−1
2
3
I
4
0
−1
−2
−3
−4
−5
−1
−10
−10
−10
−10
(mA)
V
CE
(V)
C
VCE = −1 V
Tamb = 25 °C
Fig 3. BCP69-16: DC current gain as a function of
collector current; typical values
Fig 4. BCP69-16: Collector current as a function of
collector-emitter voltage; typical values
mle304
mle306
3
−1000
−10
V
BE
(mV)
−800
V
(mV)
CEsat
2
−10
−600
−400
−200
0
−10
−1
−1
2
3
4
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
C
C
VCE = −1 V
IC/IB = 10
Fig 5. BCP69-16: Base-emitter voltage as a function
of collector current; typical values
Fig 6. BCP69-16: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
7 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
006aab404
mle309
−2.4
C
3
10
I
(A)
I
(mA) = −12.0
−2.0
B
h
FE
−10.8
−8.4
−9.6
−7.2
−1.6
−1.2
−0.8
−0.4
0
−6.0
−3.6
−4.8
−2.4
−1.2
2
10
−10
−1
2
3
I
4
0
−1
−2
−3
−4
−5
−1
−10
−10
−10
−10
(mA)
V
(V)
CE
C
VCE = −1 V
Tamb = 25 °C
Fig 7. BCP69-25: DC current gain as a function of
collector current; typical values
Fig 8. BCP69-25: Collector current as a function of
collector-emitter voltage; typical values
mle304
mle310
3
−1000
−10
V
BE
(mV)
−800
V
(mV)
CEsat
2
−10
−600
−400
−200
0
−10
−1
−1
2
3
4
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
C
C
VCE = −1 V
IC/IB = 10
Fig 9. BCP69-25: Base-emitter voltage as a function
of collector current; typical values
Fig 10. BCP69-25: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
8 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
8. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3 3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig 11. Package outline SOT223 (SC-73)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number[2]
Package
Description
Packing quantity
1000
-115
4000
BCP69
SOT223
8 mm pitch, 12 mm tape and reel
-135
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
[1] For further information and the availability of packing methods, see Section 13.
[2] /DG: halogen-free
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
9 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
10. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 12. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig 13. Wave soldering footprint SOT223 (SC-73)
Rev. 06 — 2 December 2008
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
10 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
11. Revision history
Table 10. Revision history
Document ID
BCP69_6
Release date
20081202
Data sheet status
Change notice
Supersedes
Product data sheet
-
BCP69_5
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 1 “Product overview”: enhanced
• Table 4 “Ordering information”: enhanced
• Figure 2, 4 and 8: updated
• Figure 11: superseded by minimized package outline drawing
• Section 9 “Packing information”: added
• Section 10 “Soldering”: enhanced
• Section 12 “Legal information”: updated
BCP69_5
BCP69_4
BCP69_3
20031125
20021115
19990408
Product specification
Product specification
Product specification
-
-
-
BCP69_4
BCP69_3
BCP69_CNV_2
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
11 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
12 of 13
BCP69
NXP Semiconductors
20 V, 1 A PNP medium power transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 December 2008
Document identifier: BCP69_6
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