BCP69-25 [INFINEON]
PNP Silicon AF Transistor (For general AF application High collector current High current gain); PNP硅晶体管自动对焦（一般自动对焦的应用高集电极电流高电流增益）
| 型号： | BCP69-25 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistor (For general AF application High collector current High current gain) |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistor
BCP 69
● For general AF application
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary type: BCP 68 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
BCP 69
BCP 69
Q62702-C2130
B
C
E
C
SOT-223
BCP 69-10
BCP 69-16
BCP 69-25
BCP 69-10 Q62702-C2131
BCP 69-16 Q62702-C2132
BCP 69-25 Q62702-C2133
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
V
CE0
CES
20
25
V
Collector-base voltage
Emitter-base voltage
Collector current
V
V
CB0
EB0
25
5
I
I
I
I
C
1
A
Peak collector current
Base current
CM
2
B
100
200
1.5
150
mA
Peak base current
Total power dissipation, T
Junction temperature
BM
S
= 124 ˚C2)
P
tot
W
T
j
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 72
≤ 17
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
01.97
Semiconductor Group
1
BCP 69
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CES
V(BR)CB0
V(BR)EB0
20
25
25
5
–
–
–
–
–
–
–
–
V
IC
= 30 mA, I
B
= 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Collector-base breakdown voltage
= 10 µA, I = 0
IC
B
Emitter-base breakdown voltage
= 10 µA, I = 0
IE
B
Collector-base cutoff current
I
CB0
EB0
VCB = 25 V
–
–
–
–
100
100
nA
µA
V
CB = 25 V, T
A
= 150 ˚C
Emitter-base cutoff current
= 0
I
–
–
100
nA
V
EB = 5 V, I
C
DC current gain1)
h
FE
–
50
85
85
100
160
60
–
–
100
160
250
–
–
I
I
C
= 5 mA, VCE = 10 V
= 500 mA, VCE = 1 V
375
160
250
375
–
C
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
I
C
= 1 A, VCE = 1 V
Collector-emitter saturation voltage1)
= 1 A, I = 100 mA
V
CEsat
BE
–
–
0.5
V
I
C
B
Base-emitter voltage1)
V
–
–
0.6
–
–
1
I
I
C
= 5 mA, VCE = 10 V
= 1 A, VCE = 1 V
C
AC characteristics
Transition frequency
fT
–
100
–
MHz
I
C
= 100 mA, VCE = 5 V, f = 100 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BCP 69
Total power dissipation Ptot = f (T
A
*; TS
)
Transition frequency f
T
= f (I )
C
* Package mounted on epoxy
VCE = 5 V, f = 100 MHz
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CB = 25 V
VCB = 1 V
Semiconductor Group
3
BCP 69
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC
= f (VCEsat
)
IC
= f (VBEsat)
h
FE = 10
h
FE = 10
Permissible pulse load Ptot max/Ptot DC = f (t )
p
Semiconductor Group
4
相关型号：
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TRANSISTOR 1 A, 20 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General Purpose Power
NXP
BCP69-25E6327
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INFINEON
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