BAV23A [TYSEMI]
Small plastic SMD package Switching speed: max. 50 ns General application; 小型塑料SMD封装的开关速度：最大。 50 ns的一般应用
| 型号： | BAV23A |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Small plastic SMD package Switching speed: max. 50 ns General application |
| 文件： | 总3页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
BAV23A
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
Features
+0.1
-0.1
3
Small plastic SMD package
Switching speed: max. 50 ns
General application
1
2
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
-0.1
1.9
3
1
2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VRRM
Rating
Unit
V
Repetitive peak reverse voltage
250
500
200
400
225
125
625
Repetitive peak reverse voltage series connection
Continuous reverse voltage
VRRM
VR
V
V
V
Continuous reverse voltage
series connection
VR
Continuous forward current (single diode loaded *)
(double diode loaded *)
IF
mA
mA
Repetitive peak forward current
IFRM
9
3
Non-repetitive peak forward current (Tj = 25 ) t=1us
IFSM
A
t = 100us
t =10ms
1.7
PD
Rth j-tp
Rth j-a
Tst g
Tj
350
360
500
mW
K/W
K/W
power dissipation (Tamb = 25 ) *
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Storage temperature
*
-65 to +150
150
Junction temperature
* Device mounted on an FR4 printed-circuit board.
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Product specification
BAV23A
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
Conditions
Max
1.0
1.25
2.0
2.5
100
100
100
100
5
Unit
V
IF = 100 mA
IF = 200 mA
VF
VF
IR
V
V
series connection, IF = 100 mA
series connection, IF = 200 mA
VR = 200 V
Forward voltage
Reverse current
V
nA
mA
nA
mA
pF
VR = 200V; Tj = 150
VR = 400 V
Reverse current
IR
Cd
trr
VR = 400V; Tj = 150
Diode capacitance
Reverse recovery time
f = 1 MHz; VR = 0 V;
when switched from IF =30 mA to IR = 30 mA;
RL = 100 ; measured at IR = 3 mA;
50
ns
Typical Characteristics
600
300
handbook, halfpage
I
I
F
F
(mA)
(mA)
(1)
(2)
(3)
400
200
single diode loaded
double diode loaded
200
100
0
0
0
0
1
2
V
(V)
100
200
o
F
T
( C)
amb
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.1 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.2 Forward current as a function of forward
voltage.
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Product specification
BAV23A
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2
1.0
10
handbook, halfpage
handbook, halfpage
C
I
d
R
(pF)
0.8
(µA)
10
(1)
(2)
1
0.6
0.4
1
10
2
10
0.2
0
o
0
100
200
2
4
6
8
T ( C)
j
V
(V)
R
(1) VR = 200 V; maximum values.
(2) R = 200 V; typical values.
f = 1 MHz; Tj = 25 °C.
V
Fig.4 Reverse current as a function of junction
temperature.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
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相关型号：
BAV23A-TP
Rectifier Diode, 2 Element, 0.225A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKSGE-3
MCC
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