BAV23A-400MA-SOT-23 [DGNJDZ]
SOT-23 Plastic-Encapsulate Diodes;
| 型号： | BAV23A-400MA-SOT-23 |
| 厂家： | 
Nanjing International |
| 描述： | SOT-23 Plastic-Encapsulate Diodes |
| 文件： | 总1页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
SOT-23
BAV23A/C/S
SCHOTTKY BARRIER DIODE
FEATURES
z
z
z
Fast Switching Speed
High Conductance
For General Purpose Switching Applications
BAV23A
BAV23C
BAV23S
MARKING: KT7
MARKING: KT6
MARKING:KL31
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
250
V
VRWM
Working Peak Reverse Voltage
VR(RMS)
IO
RMS Reverse Voltage
175
400
9
V
mA
A
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ t=1μs
@ t=100μs
IFSM
3
A
@ t=10ms
1.7
A
PD
RΘJA
Tj
Power Dissipation
350
286
125
-55~+150
mW
℃/W
℃
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Tstg
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Symbol
V(BR)
IR
Test conditions
Min
Typ
Max
Unit
V
IR=100μA
VR=250V
IF=100mA
250
0.1
1
μA
Forward voltage
VF
V
IF=200mA
1.25
5
Total capacitance
Ctot
trr
VR=0V,f=1MHz
pF
ns
Reverse recovery time
IF= IR=30mA, Irr=0.1×IR, RL=100Ω
50
B,Jul,2012
相关型号：
BAV23A-TP
Rectifier Diode, 2 Element, 0.225A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKSGE-3
MCC
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