2SK3641 [TYSEMI]
Low on-state resistance RDS(on)1 =14 m MAX. Low Ciss: Ciss = 930 pF TYP.; 低通态电阻RDS(on ) 1 = 14 m最大。低西塞:西塞= 930 pF的典型。型号: | 2SK3641 |
厂家: | TY Semiconductor Co., Ltd |
描述: | Low on-state resistance RDS(on)1 =14 m MAX. Low Ciss: Ciss = 930 pF TYP. |
文件: | 总1页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
2SK3641
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
Features
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-state resistance
RDS(on)1 =14 m MAX. (VGS = 10 V, ID = 18A)
RDS(on)2 =25 m MAX. (VGS = 4.5 V, ID = 15 A)
Low Ciss: Ciss = 930 pF TYP.
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
Gate to source voltage
V
20
36
A
Drain current
Idp *
A
140
29
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=30V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=18A
VGS=10V,ID=18A
VGS=4.5V,ID=15A
Gate leakage current
Gate cut off voltage
IGSS
10
A
VGS(off)
Yfs
1.5
5.5
2.5
V
Forward transfer admittance
11
11
S
RDS(on)1
RDS(on)2
Ciss
14
25
m
Drain to source on-state resistance
17
m
Input capacitance
Output capacitance
930
250
pF
pF
VDS=10V,VGS=0,f=1MHZ
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
ton
tr
160
9.4
8.6
34
pF
ns
ns
ns
ID=18A,VGS(on)=15V,RG=10 ,VDD=10V
Turn-off delay time
toff
Fall time
tf
11
22
ns
nC
nC
nC
V
Total Gate Charge
QG
VDD = 24V
VGS = 10 V
ID =36A
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
QGS
QGD
VF(S-D)
3.6
7.4
1.0
IF = 36 A, VGS = 0 V
IF = 36 A, VGS = 0 V
di/dt = 100 A/ ìs
Reverse Recovery Time
Reverse Recovery Charge
trr
24
15
ns
Qrr
nC
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4008-318-123
相关型号:
2SK3641-ZK
36000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB, TO-252, MP-3ZK, 3 PIN
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