2SK3643 [TYSEMI]
Low on-state resistance RDS(on)1 =6 m MAX. Low Ciss: Ciss = 2400pF TYP.; 低通态电阻RDS（on ） 1 = 6 m最大。低西塞：西塞= 2400pF TYP 。
| 型号： | 2SK3643 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low on-state resistance RDS(on)1 =6 m MAX. Low Ciss: Ciss = 2400pF TYP. |
| 文件： | 总1页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
2SK3643
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
Features
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-state resistance
RDS(on)1 =6 m MAX. (VGS = 10 V, ID = 32A)
RDS(on)2 =9 m MAX. (VGS = 4.5 V, ID = 32 A)
Low Ciss: Ciss = 2400pF TYP.
0.127
max
+0.1
0.80
-0.1
+0.1
0.60
-0.1
2.3
4.60
1 Gate
+0.15
-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
30
20
Gate to source voltage
V
A
64
Drain current
Idp *
A
256
40
Power dissipation
TC=25
TA=25
PD
W
1.0
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Symbol
IDSS
Testconditons
Min
Typ
Max
10
Unit
A
VDS=30V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=32A
VGS=10V,ID=32A
VGS=4.5V,ID=32A
Gate leakage current
Gate cut off voltage
IGSS
nA
V
100
2.5
VGS(off)
Yfs
RDS(on)1
RDS(on)2
1.5
19
Forward transfer admittance
39
4.7
6.3
S
6
9
m
Drain to source on-state resistance
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
2400
920
320
14
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS=10V,VGS=0,f=1MHZ
tr
14
ID=32A,VGS(on)=10V,RG=10 ,VDD=15V
Turn-off delay time
Fall time
toff
75
tf
23
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
48
VDD = 24V
VGS = 10 V
ID =64A
8.4
12
http://www.twtysemi.com
sales@twtysemi.com
1 of 1
4008-318-123
相关型号：
©2020 ICPDF网 联系我们和版权申明