2SK3640 [TYSEMI]
Low on-state resistance RDS(on)1 = 21 m MAX. Built-in gate protection diode; 低通态电阻RDS（on ） 1 = 21 m最大。内置栅极保护二极管
| 型号： | 2SK3640 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low on-state resistance RDS(on)1 = 21 m MAX. Built-in gate protection diode |
| 文件： | 总2页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransistIoCrs
Product specification
2SK3640
TO-252
Unit: mm
+0.15
-0.15
+0.1
2.30
-0.1
6.50
Features
+0.2
5.30
-0.2
+0.8
0.50
-0.7
Low on-state resistance
RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A)
RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A)
0.127
max
+0.1
0.80
-0.1
Low Ciss: Ciss = 570 pF TYP.
Built-in gate protection diode
+0.1
0.60
-0.1
1. Gate
2.3
4.60
+0.15
-0.15
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Symbol
VDSS
VGSS
ID(DS)
ID(pulse)
PT
Rating
Unit
V
30
V
16
A
19
Drain Current(pulse) *1
A
76
20
W
W
Total Power Dissipation (TC = 25
Total Power Dissipation
)
PT
1
150
Channel Temperature
Tch
Storage temperature
Tstg
-55 to +150
10
Single Avalanche Current *2
Single Avalanche Energy *2
IAS
A
EAS
10
mJ
*1PW
10 s, Duty Cycle
1%
*2. Starting Tch = 25 , VDD = 15 V, RG = 25 , VGS = 20
0 V, L = 100
H
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TransistIoCrs
Product specification
2SK3640
Electrical Characteristics Ta = 25
Parameter
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Symbol
IDSS
Testconditons
VDS = 30 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
Min
Typ
Max
10
Unit
A
IGSS
10
A
VGS(off) VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 9 A
1.5
3.7
2.5
V
Forward Transfer Admittance
7.4
15
S
Yfs
RDS(on)1 VGS = 10 V, ID = 9 A
RDS(on)2 VGS = 4.5 V, ID = 9 A
21
40
Drain to Source On-state Resistance
24
Input Capacitance
Output Capacitance
Feedback Capacitance
Turn-on Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
tr
VDS = 10 V
VGS = 0 V
570
160
100
7.7
4.7
24
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
f = 1 MHz
VDD = 15 V, ID = 9 A
VGS = 10 V
RG = 10
Turn-off Delay Time
Fall Time
td(off)
tf
7
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qg
VDD = 24 V
VGS = 10 V
ID = 19 A
14
Qgs
Qgd
2.4
4.3
0.95
21
VF(S-D) IF = 19 A, VGS = 0 V
trr
IF = 19 A, VGS = 0 V
di/dt = 100 A/
ns
nC
Qrr
12
s
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相关型号：
2SK3641-ZK
36000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB, TO-252, MP-3ZK, 3 PIN
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