2SK3507 [TYSEMI]

4.5 V drive available Low on-state resistance Built-in G-S protection diode; 4.5 V可驱动低通态电阻内置GS保护二极管

2SK3507


型号：	2SK3507
厂家：	TY Semiconductor Co., Ltd
描述：	4.5 V drive available Low on-state resistance Built-in G-S protection diode 4.5 V可驱动低通态电阻内置GS保护二极管晶体二极管晶体管开关驱动
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中文：	中文翻译
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Product specification

2SK3507

TO-252

Features

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

4.5 V drive available

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low on-state resistance

R^DS(on)1= 45 m MAX. (V^GS= 10 V, I^D= 11 A)

Low gate charge

0.127

max

+0.1

0.80

-0.1

Q^G= 8.5 nC TYP. (V^DD= 24 V, V^GS= 10 V, I^D= 22 A)

Built-in G-S protection diode

+0.1

0.60

-0.1

2.3

4.60

1 Gate

Surface mount package available

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

V

30

Gate to source voltage

V

16

A

22

Drain current

I^dp*

A

45

20

Power dissipation

T^C=25

T^A=25

P^D

W

1.5

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

Min

Typ

Max

10

Unit

A

V^DS=30V,V^GS=0

V^GS= 16V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=4.0V,I^D=11A

VGS=10V,ID=11A

V^GS=4.5V,I^D=11A

1

A

1.5

6

2.5

V

Forward transfer admittance

S

RDS(on)1

R^DS(on)2

C^iss

28

46

45

76

m

Drain to source on-state resistance

m

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

360

125

65

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V^DS=10V,V^GS=0,f=1MHZ

C^oss

C^rss

t^on

6.6

3.6

16

t^r

I^D=11A,V^GS(on)=10V,R^L=10 ,V^DD=15V

Turn-off delay time

Fall time

t^off

tf

5.3

8.5

2

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=22A, V^DD=24V, V^GS= 10 V

Q^GS

Q^GD

2.1

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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