2SK3510-ZJ [NEC]
SWITCHING N-CHANNEL POWER MOSFET; 切换N沟道功率MOSFET型号: | 2SK3510-ZJ |
厂家: | NEC |
描述: | SWITCHING N-CHANNEL POWER MOSFET |
文件: | 总8页 (文件大小:89K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3510
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
PART NUMBER
2SK3510
The 2SK3510 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE
TO-220AB
TO-262
2SK3510-S
FEATURES
2SK3510-ZJ
TO-263
• Super low on-state resistance:
RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
• Low Ciss: Ciss = 8500 pF TYP.
• Built-in gate protection diode
2SK3510-Z
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
75
±20
V
V
±83
A
±332
125
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
PT2
1.5
W
(TO-262)
Tch
150
°C
°C
A
Storage Temperature
Tstg
–55 to +150
69
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
450
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published May 2002 NS CP(K)
Printed in Japan
D15687EJ1V0DS00 (1st edition)
2001
©
2SK3510
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
SYMBOL
IDSS
TEST CONDITIONS
VDS = 75 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
4.0
µA
µA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 42 A
VGS = 10 V, ID = 42 A
VDS = 10 V
2.0
30
3.0
60
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
6.5
8500
1300
650
35
8.5
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
VGS = 0 V
Reverse Transfer Capacitance
Turn-on Delay Time
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 38 V, ID = 42 A
VGS = 10 V
Rise Time
28
Turn-off Delay Time
RG = 0 Ω
105
16
Fall Time
Total Gate Charge
QG
VDD = 60 V
150
30
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 83 A
52
IF = 83 A, VGS = 0 V
IF = 83 A, VGS = 0 V
di/dt = 100 A/ µs
1.0
80
ns
nC
Qrr
240
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
VGS
10%
90%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
V
DD
VDD
V
VDS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
VDS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
VDD
t
on
toff
τ = 1 µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
PG.
50 Ω
VDD
2
Data Sheet D15687EJ1V0DS
2SK3510
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - °C
1000
100
10
ID(pulse)
) Limited
µ
n
(o
= 10 V)
RDS
(at V
I
D(DC)
GS
µ
D
C
10
ms
1
TC
= 25˚C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
1
Channel to Ambient
Rth(ch-A) = 83.3˚C/W
Channel to Case
Rth(ch-C) = 1.0˚C/W
0.1
0.01
Single Pulse
100 1000
µ
µ
100
1 m
10 m
100 m
1
10
10
PW - Pulse Width - s
3
Data Sheet D15687EJ1V0DS
2SK3510
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
100
10
400
350
300
250
200
150
100
50
VDS = 10 V
Pulsed
Pulsed
GS
V
= 10 V
TA = 150°C
75°C
25°C
−55°C
1
0.1
0
1
2
3
4
5
6
7
0
1
2
3
4
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
VD S = 10 V
Pulsed
VDS = 10 V
ID = 1 mA
TA = 150°C
75°C
1
25°C
−55°C
0.1
0.01
-100
-50
0
50
100
150
200
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
18
16
14
12
10
8
10
Pulsed
Pulsed
8
D
I
= 42 A
6
4
2
0
G S
V
= 10 V
6
4
2
0
1
10
100
1000
0
2
4
6
8
10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15687EJ1V0DS
2SK3510
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
14.0
10 000 0
10 000
10 00
G S
V
= 0 V
Pulsed
f = 1 M H z
12.0
10.0
8.0
iss
C
C
oss
6.0
rss
C
4.0
VG S = 10 V
2.0
D
I
= 42 A
0.0
10 0
-100
-50
0
50
100
150
200
0.1
1
10
10 0
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
1000
100
80
16
D
I
= 83 A
VDD = 60 V
70
60
50
40
30
20
10
0
14
12
10
8
DD
V
= 38 V
t
d(off)
VDD = 15 V
t
d(on)
t
r
t
f
6
VG S
10
1
4
2
DS
V
V
= 38 V
DD = 10 V
RGS
=0 Ω
V
G
0
0.1
1
10
100
0
50
100
150
200
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
100
10
1 0 0
Pulsed
G S
V
= 0 V
G S
V
= 10 V
1
0.1
0.01
G S
V
=
0 V
µ
d i/d t = 1 0 0 A /
s
1 0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0 .1
1
1 0
1 0 0
VSD - Source to Drain Voltage - V
IF - Drain Current - A
5
Data Sheet D15687EJ1V0DS
2SK3510
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
140
120
100
80
1 0 0 0
1 0 0
1 0
V
R
V
I
DD = 35 V
= 25 Ω
GS = 20 → 0 V
AS ≤ 69 A
D D
V
R
V
=
=
3 5 V
G
G
Ω
=
2 5
G S
→
0
2 0
V
A S
I
=
6 9 A
60
A S
E
= 4 5 0 m J
40
20
1
0
25
50
75
100
125
150
0 .0 0 1
0 .0 1
0 .1
1
1 0
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - °C
6
Data Sheet D15687EJ1V0DS
2SK3510
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1.3±0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
1.3±0.2
φ
10 TYP.
3.6±0.2
4
1
2
3
4
1
2 3
1.3±0.2
1.3±0.2
2.8±0.2
0.5±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
0.75±0.1
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
1.Gate
2.Drain
3.Source
2.54 TYP.
4.Fin (Drain)
3) TO-263 (MP-25ZJ)
4) TO-220SMD (MP-25Z)Note
4.8 MAX.
4.8 MAX.
10 TYP.
10 TYP.
1.3±0.2
1.3±0.2
4
4
1
2
3
1
2
3
1.4±0.2
1.4±0.2
0.7±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
0.5±0.2
2.54 TYP.
2.54 TYP.
2.54 TYP.
1.Gate
1.Gate
2.Drain
3.Source
2.Drain
3.Source
4.Fin (Drain)
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Body
Diode
Gate
Gate
Protection
Diode
Source
7
Data Sheet D15687EJ1V0DS
2SK3510
•
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
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M8E 00. 4
相关型号:
2SK3511-S-AZ
83A, 75V, 0.0125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN
RENESAS
2SK3511-Z-AZ
Power Field-Effect Transistor, 83A I(D), 75V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN
NEC
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