2SK3432 [TYSEMI]

Super low on-state resistance: RDS(on)1 = 4.0m MAX. (VGS= 10 V, ID = 42 A); 超低通态电阻： RDS （ ON） 1 = 4.0米MAX 。（ VGS = 10V ， ID = 42 A）


型号：	2SK3432
厂家：	TY Semiconductor Co., Ltd
描述：	Super low on-state resistance: RDS(on)1 = 4.0m MAX. (VGS= 10 V, ID = 42 A) 超低通态电阻： RDS （ ON） 1 = 4.0米MAX 。（ VGS = 10V ， ID = 42 A）晶体晶体管开关脉冲局域网
文件：	总1页 (文件大小：184K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSMMDD TTyyppe

MOSFET

Product specification

2SK3432

TO-263

Unit: mm

Features

+0.2

4.57

-0.2

Super low on-state resistance:

R^DS(on)1= 4.0m MAX. (V^GS= 10 V, I^D= 42 A)

R^DS(on)2= 6.9 m MAX. (V^GS= 4 V, I^D= 42 A)

Low C^iss: C^iss= 9500 pF TYP.

Built-in gate protection diode

+0.1

1.27

-0.1

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

332

100

Power dissipation

T^C=25

T^A=25

P^D

1.5

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Y^fs

Testconditons

Min

Typ

Max

Unit

V^DS=40V,V^GS=0

V^GS= 20V,V^DS=0

V^DS=10V,I^D=1mA

V^DS=10V,I^D=42A

V^GS=10V,I^D=42A

V^GS=4V,I^D=42A

1.5

2.0

2.5

Forward transfer admittance

R^DS(on)1

R^DS(on)2

C^iss

3.2

4.0

6.9

Drain to source on-state resistance

4.8

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

9500

2200

920

140

1800

470

410

150

V^DS=10V,V^GS=0,f=1MHZ

C^oss

C^rss

t^on

t^r

I^D=42A,V^GS(on)=10V,R^G=10 ,V^DD=20V

Turn-off delay time

Fall time

t^off

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=83A, V^DD=32V, V^GS= 10 V

Q^GS

Q^GD

http://www.twtysemi.com

sales@twtysemi.com

1 of 1

4008-318-123

相关型号：

2SK3432-AZ

Power Field-Effect Transistor, 83A I(D), 40V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

NEC

2SK3432-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC

2SK3432-S-AZ

暂无描述

NEC

2SK3432-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC

2SK3432-Z-AZ

Power Field-Effect Transistor, 83A I(D), 40V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MP-25Z, TO-220SMD, 3 PIN

NEC

2SK3432-ZJ

ETC

2SK3432-ZJ-AZ

Power Field-Effect Transistor, 83A I(D), 40V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN

NEC

2SK3433

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC

2SK3433

MOS Field Effect Transistor

KEXIN

2SK3433

Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS= 10 V, ID = 42 A)

TYSEMI

2SK3433

40A, 60V, 0.041ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN

RENESAS

2SK3433(0)-AZ

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,40A I(D),TO-220AB

RENESAS