2SD1419 [TYSEMI]
Low frequency power amplifier Collector to base voltage VCBO 120 V; 低频功率放大器集电极到基极电压VCBO 120 V
| 型号： | 2SD1419 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low frequency power amplifier Collector to base voltage VCBO 120 V |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SD1419
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
120
100
V
5
V
1
A
Collector peak current
iC(peak)*1
PC*2
Tj
2
1
A
Collector power dissipation
Junction temperature
W
150
Storage temperature
Tstg
-55 to 150
*1 PW 10ms, duty cycle 20%
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
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Transistors
Product specification
2SD1419
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Testconditons
IC = 10 ìA, IE = 0
Min
120
100
5
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
V
IC = 1 mA, RBE =
IE= 10 ìA, IC = 0
V
VCB = 100 V, IE = 0
10
ìA
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 500 mA*
IC = 500 mA, IB = 50 mA*
VCE = 5 V, IC = 150 mA*
VCE = 5 V, IC = 150 mA*
VCB = 10 V, IE = 0, f = 1 MHz
60
30
200
DC current transfer ratio
hFE
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
*Pulse test
VCE(sat)
VBE
fT
1
V
V
1.5
140
12
MHz
pF
Cob
hFE Classification
Marking
hFE
DD
DE
60 120
100 200
http://www.twtysemi.com
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sales@twtysemi.com
4008-318-123
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