2SD1419-D [KEXIN]
NPN Transistors;
| 型号： | 2SD1419-D |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：920K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1419
1.70 0.1
■ Features
● Low frequency power amplifier
● Complementary to 2SB1026
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
120
100
5
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
I
C
1
A
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
(Note.1)
I
CP
2
P
C
1
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
120
100
5
Ic= 100 uA， I
E= 0
Ic= 1 mA，RBE= ∞
I
E
= 100 uA， I
CB= 100 V , I
EB= 5V , I =0
C
= 0
I
CBO
EBO
V
V
E= 0
10
0.1
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=500 mA, I
B
=50 mA
=50 mA
V
C
=500 mA, I
B
1.2
1.5
200
V
BE
V
V
V
V
V
CE= 5V, I
CE= 5V, I
CE= 5V, I
C= 150 mA
C= 150 mA
C= 500 mA
60
30
DC current gain
hFE
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
E= 0,f=1MHz
12
pF
f
CE= 5V, I = 150mA
C
140
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1419-D
60-120
DD
2SD1419-E
100-200
DE
1
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SMD Type
Transistors
NPN Transistors
2SD1419
■ Typical Characterisitics
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.0
0.8
0.6
0.4
0.2
35
30
1.2
25
20
15
10
0.8
0.4
5
2
1
0.5 mA
IB = 0
2
4
6
8
10
0
50
100
150
0
。
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta ( C)
Typical Transfer Characteristics
VCE = 5 V
DC Current Transfer Ratio vs. Collector Current
300
500
VCE = 5 V
200
100
50
。
250
200
150
100
50
。
20
10
5
2
1
0
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100
300 1,000
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs. Collector Current
240
200
160
120
80
200
VCE = 5 V
Pulse
f = 1 MHz
IE = 0
100
50
20
10
5
40
2
0
10
1
2
5
10 20
50 100
30
100
300
1,000
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
2
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SMD Type
Transistors
NPN Transistors
2SD1419
■ Typical Characterisitics
Saturation Voltage vs. Collector Current
0.6
1.2
IC = 10 IB
Pulse
0.5
0.4
0.3
0.2
0.1
1.0
0.8
0.6
0.4
0.2
VCE(sat)
0
0
1
3
10
30
100 300 1,000
Collector Current IC (mA)
3
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