2SC4666 [TYSEMI]

High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max); 高的hFE ：的hFE = 600 3600高集电极电流IC = 150 MA（最大）

2SC4666


型号：	2SC4666
厂家：	TY Semiconductor Co., Ltd
描述：	High hFE: hFE = 600 3600 High collector current: IC = 150 mA (max) 高的hFE ：的hFE = 600 3600高集电极电流IC = 150 MA（最大）晶体晶体管开关光电二极管
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SMD Type

TransistIoCrs

Product specification

2SC4666

Features

High h^FE: h^FE= 600 3600

High voltage: V^CEO= 50 V

High collector current: I^C= 150 mA (max)

Small package

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

V

50

50

V

5

150

V

mA

mA

mW

Base current

I^B

30

Collector power dissipation

Junction temperature

Storage temperature

P^C

100

T^j

125

T^stg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

Min

Typ

Max

0.1

Unit

ìA

Collector cut-off current

Emitter cut-off current

DC current gain

V^CB= 50 V, I^E= 0

V^EB= 5 V, I^C= 0

I^EBO

0.1

ìA

h^FE

V^CE= 6 V, I^C= 2 mA

600

100

3600

Collector-emitter saturation voltage

Transition frequency

V^{CE (sat)}I^C= 100 mA, I^B= 10 mA

0.12 0.25

250

V

fT

VCE = 10 V, IC = 10 mA

MHz

pF

Collector output capacitance

C^ob

V^CB= 10 V, I^E= 0, f = 1 MHz

3.5

V^CE= 6 V, I^C= 0.1 mA, f = 100 Hz,Rg =

10 kÙ

NF(1)

NF(2)

0.5

0.3

dB

dB

Noise figure

V^CE= 6 V, I^C= 0.1 mA, f = 1 kHz,Rg =

10 kÙ

hFE Classification

P

Marking

Rank

A

B

hFE

600 1800

1200 3600

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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