2SC4667 [KEXIN]
Silicon NPN Epitaxial; NPN硅外延型号: | 2SC4667 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | Silicon NPN Epitaxial |
文件: | 总1页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial
2SC4667
Features
High transition frequency: fT = 400 MHz (typ.)
Low saturation voltage: VCE (sat) = 0.3 V (max)
High speed switching time: tstg = 15 ns (typ.)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
40
15
V
5
200
V
mA
mA
mW
Base current
IB
40
Collector power dissipation
Junction temperature
Storage temperature
PC
100
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
40
Typ
Max
0.1
0.1
240
0.3
1.0
Unit
ìA
Collector cut-off current
Emitter cut-off current
VCB = 40 V, IE = 0
VEB = 5 V, IC = 0
IEBO
ìA
DC current gain
hFE
VCE = 1 V, IC = 10 mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE (sat) IC = 20 mA, IB = 1 mA
VBE (sat) IC = 20 mA, IB = 1 mA
V
V
fT
VCE = 10 V, IC = 10 mA
200
400
4
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
Turn-on time
Storage time
Fall time
ton
tstg
tf
70
15
30
ns
ns
ns
hFE Classification
CH
Marking
Rank
hFE
R
O
Y
40 80
70 140
120 240
1
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