2SA1384 [TYSEMI]
High Voltage: VCBO = -300V , VCEO = -300V Complementary to 2SC3515; 高电压： VCBO = -300V ， VCEO = -300V补充到2SC3515
| 型号： | 2SA1384 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High Voltage: VCBO = -300V , VCEO = -300V Complementary to 2SC3515 |
| 文件： | 总4页 (文件大小：837K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
2SA1384
Features
High Voltage: VCBO = -300V , VCEO = -300V
Low Saturation Voltage: VCE(sat) = -0.5V (max)
Small Collector Output Capacitance: Cob = 6pF
PC = 1 to 2W (mounted on ceramic substrate)
Small Flat Package
Complementary to 2SC3515
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-300
Unit
V
-300
V
-8
V
-100
mA
mA
Base Current
IB
-20
PC
500
Collector Power Dissipation
mW
PC *
Tj
1000
150
Jumction temperature
Storage temperature Range
Tstg
-55 to +150
* 2SA1384 mounted on ceramic substrate (250 mm2 x 0.8 t)
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
-0.1
-0.1
Unit
ìA
ìA
V
Collector Cut-off Current
VCB = -300V , IE = 0
VEB = -8V , IC = 0
Emitter Cut-off Current
IEBO
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
DC Current Gain
V(BR)CBO IC = -0.1mA , IE = 0
V(BR)CEO IC = -1mA , IB = 0
-300
-300
30
V
hFE
VCE = -10V , IC = -20mA
150
-0.5
-1.0
Collector-Emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
VCE(sat) IC = -20mA , IB = -2mA
VBE(sat) IC = -20mA , IB = -2mA
V
V
fT
VCE = -10V , IC = -20mA
VCB = -20V , IE = 0 , f = 1MHz
50
70
6
MHz
pF
Collector Output Capacitance
Cob
8
4008-318-123
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Transistors
Product specification
2SA1384
hFE Classification
J
Marking
Rank
R
O
hFE
30
90
50
150
Electrical Characteristics Curves
4008-318-123
http://www.twtysemi.com
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Product specification
2SA1384
4008-318-123
http://www.twtysemi.com
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T
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Tra sistor
Transistors
Product specification
2SA1384
4008-318-123
http://www.twtysemi.com
4 of 4
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