2SA1384_07 [TOSHIBA]

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications; 高压控制应用等离子显示器,数码管驱动器应用阴极射线管的亮度控制应用
2SA1384_07
型号: 2SA1384_07
厂家: TOSHIBA    TOSHIBA
描述:

High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
高压控制应用等离子显示器,数码管驱动器应用阴极射线管的亮度控制应用

驱动器 显示器 高压
文件: 总6页 (文件大小:203K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SA1384  
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)  
2SA1384  
High Voltage Control Applications  
Unit: mm  
Plasma Display, Nixie Tube Driver Applications  
Cathode Ray Tube Brightness Control Applications  
High voltage: V  
= 300 V, V  
= 300 V  
CBO  
CEO  
Low saturation voltage: V  
= 0.5 V (max)  
CE (sat)  
Small collector output capacitance: C = 6 pF (typ.)  
ob  
Complementary to 2SC3515  
Small flat package  
P
= 1.0 to 2.0 W (mounted on a ceramic substrate)  
C
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
300  
300  
8  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
PW-MINI  
JEDEC  
V
I
100  
20  
mA  
mA  
C
JEITA  
SC-62  
2-5K1A  
Base current  
I
B
P
P
500  
TOSHIBA  
C
C
Collector power dissipation  
mW  
Weight: 0.05 g (typ.)  
1000  
(Note 1)  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
Note 1: 2SA1384 mounted on a ceramic substrate (250 mm2 × 0.8 t)  
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2006-11-09  
2SA1384  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 300 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
0.1  
0.1  
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 8 V, I = 0  
C
EBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
V
V
I
I
= 0.1 mA, I = 0  
300  
300  
(BR) CBO  
(BR) CEO  
C
C
E
= 1 mA, I = 0  
V
B
h
FE (1)  
V
V
= 10 V, I = 20 mA  
30  
150  
CE  
C
DC current gain  
(Note 3)  
h
= 10 V, I = 1 mA  
20  
50  
70  
6
0.5  
1.0  
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
V
I
I
= 20 mA, I = 2 mA  
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= 20 mA, I = 2 mA  
B
f
V
V
= 10 V, I = 20 mA  
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
= 20 V, I = 0, f = 1 MHz  
8
ob  
E
Note 3:  
h
classification R: 30 to 90, O: 50 to 150  
FE (1)  
Marking  
Part No. (or abbreviation code)  
Characteristics indicator  
J
A line indicates  
lead (Pb)-free package or  
lead (Pb)-free finish.  
Lot No.  
2
2006-11-09  
2SA1384  
I
– V  
I – V  
C CE  
C
CE  
(low voltage region)  
(low voltage region)  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
Common  
emitter  
Ta = 25°C  
Common  
emitter  
Ta = 100°C  
10  
3  
2  
10  
5  
5  
3  
2  
1  
0.8  
1  
0.6  
0.4  
0.5  
0.3  
0.2  
0.3  
0.2  
I
= −0.1 mA  
B
I
= −0.1 mA  
B
0
0
0
2  
4  
6  
8  
10  
12  
14  
0
2  
4  
6  
8  
10  
12  
14  
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
CE  
I
– V  
I – V  
C CE  
C
CE  
(low voltage region)  
(Low current region)  
100  
80  
60  
40  
20  
0
10  
8  
6  
4  
2  
0
Common  
emitter  
Ta = −55°C  
Common  
emitter  
Ta = 25°C  
10  
5 3  
2  
100  
80  
70  
60  
90  
50  
1  
40  
30  
0.8  
0.6  
0.5  
0.4  
0.3  
0.2  
20  
I
= −10 μA  
B
I
= −0.1 mA  
0
B
0
0
2  
4  
6  
8  
10  
12  
14  
0
40  
80  
120  
160 200  
240  
280  
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
CE  
I
– V  
I – V  
C CE  
C
CE  
(low current region)  
(low current region)  
10  
8  
6  
4  
2  
0
10  
8  
6  
4  
2  
0
Common  
emitter  
Ta = 100°C  
Common  
emitter  
Ta = −55°C  
70  
60  
50  
40  
30  
100  
90  
80  
70  
60  
50  
40  
20  
I
= −10 μA  
B
30  
20  
I
= −10 μA  
B
0
0
0
40  
80  
120  
160 200  
240  
280  
0
40  
80  
120  
160 200  
240 280  
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
CE  
3
2006-11-09  
2SA1384  
h
– I  
h
– I  
FE C  
FE  
C
500  
300  
1000  
Common emitter  
= 10 V  
Common emitter  
500  
300  
V
CE  
Ta = 25°C  
V
= 10 V  
CE  
100  
Ta = 100°C  
50  
30  
100  
25  
5  
1  
50  
30  
55  
10  
0.1  
0.3  
1  
3  
10  
30  
100  
10  
0.1  
Collector current  
I
C
(mA)  
0.3  
1  
3  
10  
30  
100  
Collector current  
I
C
(mA)  
V
– I  
V
– I  
BE (sat) C  
CE (sat)  
C
5  
3  
10  
Common emitter  
/I = 10  
Common emitter  
5  
3  
I
C B  
I
/I = 10  
C B  
1  
Ta = −55°C  
0.5  
0.3  
1  
0.5  
0.3  
25  
100  
Ta = 100°C  
0.1  
25  
55  
0.05  
0.03  
0.1  
0.1  
0.3  
1  
3  
10  
30  
100  
0.1  
0.3  
1  
3  
10  
30  
100  
Collector current  
I
C
(mA)  
Collector current  
I
C
(mA)  
f
T
– I  
C
500  
C , C – V  
ib ob  
R
Common emitter  
300  
100  
300  
Ta = 25°C  
f = 1 MHz  
Ta = 25°C  
50  
30  
100  
V
= 20 V  
CE  
C
ib  
(I = 0)  
C
10  
50  
30  
5  
10  
C
ob  
(I = 0)  
E
5
3
10  
0.3  
1
0.1  
1  
3  
10  
30  
0.3  
1
3
10  
30  
100  
300  
Collector current  
I
C
(mA)  
Reverse voltage  
V
(V)  
R
4
2006-11-09  
2SA1384  
P
Ta  
Safe Operating Area  
C
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
500  
300  
(1) Mounted on ceramic substrate  
I
max (pulse)  
C
2
1 ms*  
(250 mm × 0.8 t)  
10 ms*  
I
max (continuous)  
C
(2) No heat sink  
100  
100 ms*  
50  
30  
DC operation  
Ta = 25°C  
10  
5  
3  
1  
0
20  
40  
60  
80  
100  
120  
140  
160  
*: Single no repetitive pulse  
Ta = 25°C  
0.5  
0.3  
Ambient temperature Ta (°C)  
Curves must be derated linearly  
with increase in temperature.  
Tested without a substrate.  
V
max  
CEO  
0.1  
1  
3  
10  
30  
100  
300  
1000  
Collector-emitter voltage  
V
(V)  
CE  
5
2006-11-09  
2SA1384  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2006-11-09  

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