HCT801 [TTELEC]
Dual Enhancement Mode MOSFET;
| 型号： | HCT801 |
| 厂家： | 
TT Electronics |
| 描述： | Dual Enhancement Mode MOSFET |
| 文件： | 总3页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Features:
6 pad surface mount package
VDS = 90V
RDS(on) < 5Ω
ID(on) N-Channel = 1.5A | P-Channel = 1.1A
Two devices selected for VDS ID(on) and RDS(on) similarity
Full TX Processing Available
Gold plated contacts
Description:
HCT802 offers an N‐Channel and P‐Channel MOS transistor in a hermeꢀc ceramic surface mount package. The devices used
are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device. These two enhancement mode
MOSFETS are parꢀcularly well matched for VDS, IDS(on), RDS(on) and Gfs.
TX and TXV devices are processed to OPTEK’s military screening program paꢀerned aꢁer MIL‐PRF‐19500.
TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.
VDSS
Min
ID(ON) (mA)
Min
Gfs (ms)
Min
t(ON) / t(OFF) (ns)
Max
Part
Number
Sensor Type
Package
Applications:
Drivers: Solid State
Relays, Lamps,
HCT801
HCT801TX
HCT801TXV
N & P ‐Channel
Enhancement
MOSFET
Solenoids, Displays,
90
1.5 & ‐1.1 170 & 200
15/17 & 50/50 6‐pin Ceramic
Memories, etc.
Motor Control
Power Supply
Circuits
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue A 11/2016 Page 1
© TT electronics plc
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Absolute Maximum Raꢀngs
Drain Source Voltage
90V
Gate‐Source Voltage
±20 V
Drain Current (Limited by Tj max) N‐Channel
P‐Channel
2A
1.1A
Operaꢀng and Storage Temperature
-55° C to +150° C
Power Dissipaꢀon
TA = 25°C (Both devices equally driven)
TA = 25°C (Both devices equally driven)
(TS = Substrate that the package is soldered to)
0.5 W Total
1.5 W Total (1)
Electrical Characterisꢀcs (TA = 25° C unless otherwise noted)
DEVICE
B=BOTH
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ID = 10 µA(2), VGS = 0
GS = VDS, ID = 1 mA
ID = ‐1 mA
VGS = ± 20 V, VDS = 0
90(2)
0.75
‐2.0
BVDSS
Drain‐Source Breakdown
B
N
P
V
V
2.5
‐4.5
V
VTH
IGSS
IDSS
Gate Threshold Voltage
Gate‐Body Leakage
V
B
B
B
N
P
±100
10(2)
500(2)
nA
µA
µA
A
VDS = 90 V(2), VGS = 0 V
Zero Gate Voltage Drain Current
Tj = 150° C
1.5
V
DS = 25 V, VGS = 10 V
VDS = ‐15 V, VGS = ‐10 V
GS = 10 V(2), ID = 1 A(2)
ID(on)
On‐State Drain Current
‐1.1
A
RDS(on)
Gfs
Drain‐Source on Resistance
B
N
P
5
Ω
V
Forward Transconductance
170
200
mmho
Mmho
pf
VDS = 25V, ID = 0.5 A
VDS = ‐10 V, ID = ‐0.5 A
CISS
Input Capacitance
N
P
70
150
40
VDS = 25 V, VGS = 0 V, f = 1 MHz
pf
VDS = ‐25 V, VGS = 0 V, f = 1 MHz
COSS
CRSS
Note:
Common Source Output Capacitance
Reverse Transfer Capacitance
N
P
pf
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = ‐25 V, VGS = 0 V, f = 1 MHz
VDS = 25 V, VGS = 0 A, f = 1 MHz
VDS = ‐25 V, VGS = 0 A, f = 1 MHz
60
pf
N
P
10
pf
25
pf
1)
2)
This raꢀng is provided as an aid to designers. It is dependent upon mounꢀng material and methods and is not measurable as an outgoing test.
Reverse polarity for P‐Channel device
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue A 11/2016 Page 2
© TT electronics plc
Dual Enhancement Mode
MOSFET
HCT802, HCT802TX, HCT802TXV
Electrical Characterisꢀcs (TA = 25° C unless otherwise noted)
DEVICE
B=BOTH
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
t(on)
N
P
15
50
17
50
ns
ns
ns
ns
VDD = 25 v, ID = 1 A, RL = 50 Ω
VDD = ‐25 v, ID = ‐0.5 A, RL = 50 Ω
VDD = 25 v, ID = 1 A, RL = 50 Ω
VDD = ‐25 v, ID = ‐0.5 A, RL = 50 Ω
Turn‐on‐ꢀme
t(off)
N
P
Turn‐off‐ꢀme
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue A 11/2016 Page 3
© TT electronics plc
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