MBRF1045 [TSC]
Isolation 10.0 AMPS. Schottky Barrier Rectifiers; 隔离10.0安培。肖特基势垒整流器
| 型号： | MBRF1045 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Isolation 10.0 AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF1035 THRU MBRF10100
Isolation 10.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
10.0 Amperes
ITO-220AC
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: ITO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
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Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol MBRF MBRF MBRF MBRF MBRF MBRF Units
Type Number
10100
100
70
1035
35
1045 1050 1060 1090
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
45
31
45
50
35
50
60
42
60
90
63
90
24
Maximum DC Blocking Voltage
35
100
Maximum Average Forward Rectified Current
See Fig. 1
A
A
10
I(AV)
IFRM
Peak Repetitive Forward Current (Square Wave,
20.0
20KHz) at Tc=135oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
A
150
IFSM
Peak Repetitive Reverse Surge Current (Note 1)
Voltage Rate of Change (Rated VR)
A
IRRM
dV/dt
1.0
0.5
V/uS
10,000
Maximum Instantaneous Forward Voltage at
(Note 2)
IF=10A, Tc=25OC
IF=10A, Tc=125OC
IF=20A, Tc=25OC
IF=20A, Tc=125OC
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0.80
0.70
0.95
0.85
0.85
0.71
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0.57
0.84
0.72
V
VF
IR
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Maximum Instantaneous Reverse Current
@ Tc =25℃at Rated DC Blocking Voltage (Note 2)
@ Tc=125℃
mA
mA
0.1
15.0
0.1
6.0
Typical Junction Capacitance
pF
Cj
390
300
4.0
220
Maximum Thermal Resistance, Junction to Case
(Note 3)
℃/W
RθJC
-65 to +150
-65 to +175
℃
℃
Operating Junction Temperature Range
TJ
TSTG
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
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RATINGS AND CHARACTERISTIC CURVES (MBRF1035 THRU MBRF10100)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.1- FORWARD CURRENT DERATING CURVE
175
150
12
10
RESISTIVE OR
INDUCTIVE LOAD
125
100
8
6
75
50
4
MBRF1035-MBRF1045
MBRF1050-MBRF10100
2
0
25
0.1
1
10
100
0
50
CASE TEMPERATURE. (oC)
100
150
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
40
Tj=1250C
10
10
Tj=1250C
Pulse Width=300
1% Duty Cycle
s
1
Tj=750C
1
Tj=250C
0.1
0.1
Tj=250C
0.01
MBRF1035-MBRF1045
MBRF1050-MBRF1060
MBRF1090-MBRF10100
MBRF1035-MBRF1045
MBRF1050-MBRF10100
0.001
0.01
0
20
40
60
80
100
120
140
1.2
0.7 0.8 0.9 1.0 1.1
0.6
0
0.1 0.2 0.3 0.4 0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10
1,000
500
1
MBRF1035-MBRF1045
MBRF1050-MBRF1060
MBRF1090-MBRF10100
0.1
100
0.1
1.0
10
REVERSE VOLTAGE. (V)
100
0.01
0.1
1
10
100
T, PULSE DURATION. (sec)
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