MBRF1045CT [KERSEMI]
Plastic material used carries Underwriters Laboratory Classifications 94V-0; 采用塑料材料进行保险商实验室分类94V- 0
| 型号： | MBRF1045CT |
| 厂家： | 
Kersemi Electronic Co., Ltd. |
| 描述： | Plastic material used carries Underwriters Laboratory Classifications 94V-0 |
| 文件： | 总2页 (文件大小：894K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF1035CT - MBRF10150CT
ITO-220AB
Features
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Plastic material used carries Underwriters Laboratory
Classifications 94V-0
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Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
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High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
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Cases: ITO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
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Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
1035 1045 1050 1060 1090 10100 10150
Symbol
Units
Type Number
CT
35
24
35
CT
45
31
45
CT
50
35
50
CT
60
42
60
CT
90
63
90
CT
100
70
CT
150
105
150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC=133oC
VRRM
VRMS
VDC
V
V
V
100
I(AV)
10
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=133oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Peak Repetitive Reverse Surge Current
(Note 1)
IFRM
10.0
A
IFSM
IRRM
120
0.5
A
A
Maximum Instantaneous Forward Voltage at
(Note 2)
I = 5A, Tc=25oC
0.70
0.57
0.80
0.67
0.80
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
F
I = 5A, Tc=125oC
VF
0.65
0.90
0.75
V
F
I =10A, Tc=25oC
F
I =10A, Tc=125oC
F
Maximum Instantaneous Reverse Current
at Rated DC Blocking Voltage @Tc=25 oC
@ Tc=125 oC
0.1
mA
mA
IR
0.1
5.0
15
10
Voltage Rate of Change, (Rated VR)
RMS Isolation Voltage (t=1.0 second, R.H.
dV/dt
10,000
V/uS
≦30%, TA=25 oC)
(Note 4)
(Note 5)
(Note 6)
4500
3500
1500
VISO
V
Typical Thermal Resistance Per Leg (Note3)
Operating Junction Temperature Range
Storage Temperature Range
R
3.5
-65 to +150
-65 to +150
oC/W
oC
θJC
TJ
T
STG
oC
1. 2.0 us Pulse Width, f=1.0 KHz
3. Thermal Resistance from Junction to Case Per Leg.
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
Notes:
4. Clip Mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip mounting (on case), where leads do overlap heatsink.
6. Screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19”)
<
=
www.kersemi.com
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
12
10
8
180
150
120
90
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
6
4
60
2
30
0
0
0
50
100
150
1
10
100
o
CASE TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
50
MBRF1035CT-1045CT
10
40
20
10
0
Tj=125 C
MBRF1050CT-1060CT
1
4
0
Tj=75 C
0.1
2
1
0.01
MBRF1090CT-10100CT
0.4
0
Tj=25 C
0
Tj=25 C
PULSE WIDTH-300
S
0.2
0.1
1% DUTY CYCLE
MBRF10150CT
0.001
0
20
40
60
80
100
120
140
1.2
1.1
0.8
0.9
1.0
1.3
0.6
0.7
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
10
1
5,000
0
Tj=25C
f=1.0MHz
Vsig=50mVp-p
1,000
500
0.1
100
0.1
1
10
REVERSE VOLTAGE. (V)
100
0.01
0.1
1
10
100
T, PULSE DURATION. (sec)
www.kersemi.com
相关型号：
MBRF1045CT-JT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, TO-220AB, ALTERNATE ITO-220AB, 3 PIN
DIODES
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