MBR16150 [TSC]
16.0 AMPS. Schottky Barrier Rectifiers; 16.0安培。肖特基势垒整流器
| 型号： | MBR16150 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 16.0 AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1635 - MBR16150
16.0 AMPS. Schottky Barrier Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.113(2.87)
.103(2.62)
.27(6.86)
.23(5.84)
Features
.594(15.1)
.587(14.9)
ꢀ
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
PIN1
2
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
.16(4.06)
.14(3.56)
.11(2.79)
.10(2.54)
High current capability, low forward voltage drop
High surge capability
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
ꢀ
ꢀ
.025(0.64)
.014(0.35)
High temperature soldering guaranteed:
o
.205(5.20)
.195(4.95)
260 C/10 seconds,0.25”(6.35mm)from case
PIN 1
PIN 2
Mechanical Data
CASE
ꢀ
ꢀ
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Dimensions in inches and (millimeters)
ꢀ
ꢀ
ꢀ
ꢀ
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR MBR MBR MBR MBR MBR MBR
Symbol
Type Number
Units
1635 1645 1650 1660 1690 16100 16150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
35
24
35
45
31
45
50
35
50
60
42
60
90
63
90
100
70
150
105
150
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
O
16
32
A
A
I(AV)
at Tc=125 C
Peak Repetitive Forward Current (Rated VR,
o
IFRM
Square Wave, 20KHz) at Tc=125 C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
150
A
A
V
IFSM
IRRM
VF
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
Maximum Instantaneous Forward Voltage at:
o
(Note 2)
IF=16A, TC=25 C
o
0.63
0.57
0.75
0.65
0.85
0.75
0.95
0.92
IF=16A, TC=125 C
Maximum Instantaneous Reverse Current
o
@Tc=25 C at Rated DC Blocking Voltage (Note 2)
o
0.5
15
0.5
10
0.3
7.5
0.1
5
mA
mA
IR
@ Tc=125 C
Voltage Rate of Change (Rated VR)
Typical Junction Capacitance
10,000
500
V/uS
pF
dV/dt
Cj
o
Maximum Typical Thermal Resistance(Note 3)
3.0
C/W
R
θJC
o
Operating Junction Temperature Range
Storage Temperature Range
TJ
-65 to +150
-65 to +175
C
o
TSTG
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2” x 3”x 0.25” Al-Plate.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (MBR1635 THRU MBR16150)
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
FIG.1- FORWARD CURRENT DERATING CURVE
SURGE CURRENT
20
16
350
RESISTIVE OR
INDUCTIVE LOAD
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
300
250
200
12
8
150
100
4
50
0
10
NUMBER OF CYCLES AT 60Hz
100
1
0
50
100
150
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
40
10
50
10
Tj=1250C
Pulse Width=300
1% Duty Cycle
s
Tj=1250C
1
1
Tj=250C
Tj=250C
0.1
0.1
MBR1635-MBR1645
MBR1650-MBR1660
MBR1690-MBR16150
0.01
0.001
MBR1635-MBR1645
MBR1650-MBR16150
0.01
1.2
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
FORWARD VOLTAGE. (V)
0
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG.5- TYPICAL JUNCTION CAPACITANCE
6,000
100
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10.0
1,000
500
1
100
0.1
0.1
1
10
REVERSE VOLTAGE. (V)
100
0.01
0.1
1
10
100
T, PULSE DURATION. (sec)
Version: A06
相关型号：
MBR1620-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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