MBR16150CT [HY]
SCHOTTKY BARRIER RECTIFIERS; 肖特基势垒整流器器
| 型号： | MBR16150CT |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1630CT thru MBR16150CT
REVERSE VOLTAGE - 30 to 150Volts
FORWARD CURRENT - 16.0 Amperes
SCHOTTKY BARRIER RECTIFIERS
TO-220AB
FEATURES
.187(4.7)
●Metal of silicon rectifier , majority carrier conduction
.108
(2.75)
.148(3.8)
.055(1.4)
.047(1.2)
.153(3.9)
.146(3.7)
.413(10.5)
.374(9.5)
●Guard ring for transient protection
●Low power loss,high efficiency
●High current capability,low VF
.270(6.9)
.230(5.8)
●High surge capacity
●Plastic package has UL flammability
.610(15.5)
.583(14.8)
classification 94V-0
●For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
.157
(4.0)
.583(14.8)
.531(13.5)
.051
(1.3)
MECHANICAL DATA
●Case: TO-220AB molded plastic
●Polarity: As marked on the body
●Weight: 0.08ounces,2.24 grams
●Mounting position :Any
.043(1.1)
.032(0.8)
.024(0.6)
.012(0.3)
.102(2.6)
.091(2.3)
.126
(3.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
MBR
MBR
MBR
MBR
MBR
MBR
SYMBOL
UNIT
CHARACTERISTICS
1630CT 1640CT 1650CT 1660CT 1680CT 16100CT 16150CT
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
150
105
150
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward
I(AV)
16.0
A
Rectified Current ( See Fig.1)
Peak Forward Surge Current
IFSM
150
A
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
0.84
0.57
0.72
-
0.75
0.85
0.75
0.95
0.85
Peak Forward
IF=8A @TJ=25℃
IF=8A @TJ=125℃
IF=16A @TJ=25℃
IF=16A @TJ=125℃
1.05
0.65
Voltage (Note1)
0.92
VF
IR
V
-
-
-
-
0.3
10
0.1
5.0
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@TJ=25℃
mA
@TJ=125℃
400
200
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
CJ
RθJC
TJ
pF
℃/W
℃
3.0
-55 to +150
-55 to +175
TSTG
℃
NOTES:1.300us pulse width,2% duty cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to case.
~ 260 ~
RATING AND CHARACTERTIC CURVES
MBR1630CT thru MBR16150CT
FIG. 1 – FORWARD CURRENT DERATING CURVE
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
16.0
300
PULSE WIDTH 8.3 ms
250
SINGLE HALF-SINE-WAVE
12.0
8.0
(JEDEC METHOD)
200
150
100
4.0
SINGLE PHASE HALF WAVE
50
0
60HZ RESISTIVE OR
INDUCTIVE LOAD
0
1
10
20
50
100
2
5
25
50
75
100
125
150
175
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE (℃)
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3-TYPICAL REVER CHARACTERISTICS
1000
100
10
100
MBR1630CT -
MBR1640CT
MBR1630CT - MBR1660CT
MBR1680CT - MBR16150CT
10
MBR1650CT-
MBR1660CT
TJ=125℃
MBR1680CT -
MBR16100CT
MBR16150CT
1.0
1.0
0.1
TJ = 25°C
0.1
PULSE WIDTH 300us
2% DUTY CYCLE
TJ=25℃
0.01
0
20
40
60
80
100
120
140
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.5 – TYPICAL JUNCTION CAPACITANCE
1000
MBR1630CT -
MBR1660CT
MBR1680CT -
MBR16150CT
100
TJ = 25°C f = 1 MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE ,VOLTS
~ 261 ~
相关型号：
MBR1620-BP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 20V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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