HS1D [TSC]
1.0 AMP. High Efficient Surface Mount Rectifiers; 1.0 AMP 。高效表面贴装整流器
| 型号： | HS1D |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMP. High Efficient Surface Mount Rectifiers |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS1A THRU HS1M
1.0 AMP. High Efficient Surface Mount Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
SMA/DO-214AC
Features
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Glass passivated junction chip.
For surface mounted application
Low forward voltage drop
Low profile package
Built-in stain relief, ideal for automatic
placement
Fast switching for high efficiency
High temperature soldering:
260℃/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
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.091(2.30)
.078(1.99)
.012(.31)
.006(.15)
Mechanical Data
.008(.20)
.004(.10)
.056(1.41)
.035(0.90)
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Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.064 gram
.210(5.33)
.195(4.95)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HS HS HS
HS
1F
HS
1G
HS
1J
HS
1K
HS
1M
Symbol
Type Number
Units
1A 1B
1D
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig.2
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
I(AV)
1.0
30
A
A
V
IFSM
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
IR
1.0
1.3
5.0
100
1.7
Maximum DC Reverse Current @ TA =25℃
at Rated DC Blocking Voltage @ TA=100℃
uA
uA
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Trr
Cj
50
20
75
15
nS
pF
Maximum Thermal Resistance ( Note 3 )
Operating Temperature Range
Storage Temperature Range
℃/W
RθJA
TJ
70
℃
℃
-55 to +150
-55 to +150
TSTG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Mounted on P.C.B. with 0.2”x0.2” ( 5 x 5 mm ) Copper Pad Areas.
- 300 -
RATINGS AND CHARACTERISTIC CURVES (HS1A THRU HS1M)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2- MAXIMUM AVERAGE
FORWARD CURRENT DERATING
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
1.2
1.0
0.8
0.6
0.4
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
P.C.B.MOUNTED
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
0.2
0
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
80
90
100 110 120 130 140 150
o
LEAD TEMPERATURE. ( C)
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.3- TYPICAL REVERSE CHARACTERISTICS
1000
100
Tj=250C
Tj=1000C
10
100
S1D
S1A-H
H
G
1
S
H
10
1
Tj=250C
HS1J-HS1M
1
0.1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
FIG.6- TYPICAL JUNCTION CAPACITANCE
40
70
60
35
30
50
8.3ms Single Half Sine Wave
JEDEC Method
40
30
20
25
20
15
10
5
10
0
1
2
5
10
20
50
100
0.1
0.5
1
2
5
10 20
50
100 200 500 1000
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
- 301 -
相关型号：
HS1F
High Efficient Surface Mount Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere
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