HS1EL [HY]
SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS; 表面贴装高效率（超快速）玻璃钝化整流二极管
| 型号： | HS1EL |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | SURFACE MOUNT HIGH EFFICIENCY (ULTRA FAST) GLASS PASSIVATED RECTIFIERS |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS1AL thru HS1ML
SURFACE MOUNT
HIGH EFFICIENCY (ULTRA FAST)
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SOD-123FL
FEATURES
● Low cost
.114(2.9)
.098(2.5)
● Diffused junction
●Ultra fast switching for high efficiency
● Low reverse leakage current
● Low forward voltage drop
.039(1.0)
.024(0.6)
● High current capability
● The plastic material carries UL recognition 94V-0
MECHANICAL DATA
.047(1.2)
.031(0.8)
●Case: JEDEC SOD-123FL molded plastic
body over glass passivated chip
●Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
●Polarity: Laser band denotes cathode end
●Weight: 0.017gram
.043(1.1)
.020(0.5)
.154(3.9)
.138(3.5)
.004(0.1)max
.010(0.25)
.002(0.05)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOL HS1AL HS1BL HS1DL HS1GL
HS1JL
H1JL
600
HS1KL HS1ML
UNIT
CHARACTERISTICS
MARKING H1AL
H1BL
100
70
H1DL
200
H1GL
400
H1KL
800
H1ML
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
V
V
V
140
280
420
560
Maximum DC Blocking Voltage
Maximum Average Forward
100
200
400
600
800
1000
I(AV)
1.0
A
Rectified Current
@TA=55 ℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
IFSM
25
A
1.0
1.7
75
Peak Forward Voltage at 1.0A DC
VF
IR
1.3
V
5.0
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25℃
@TJ=100℃
μA
100
50
Maximum Reverse Recovery Time(Note 1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating Temperature Range
TRR
CJ
nS
pF
9
180
RθJA
TJ
℃/W
℃
-55 to +150
-55 to +150
Storage Temperature Range
TSTG
℃
NOTES: 1.Measured with IF=0.5A,IR=1A,IRR=0.25A.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction to ambient.
REV. 1, 30-Dec-2011
~ 110 ~
RATING AND CHARACTERTIC CURVES
HS1AL thru HS1ML
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG. 1 – FORWARD CURRENT DERATING CURVE
40
30
20
1.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.8
0.6
0.4
10
0
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0.2
0
10
NUMBER OF CYCLES AT 60Hz
100
1
2
5
20
50
25
50
75
100
125
150
175
AMBIENT TEMPERATURE (℃)
FIG.3 – TYPICAL JUNCTION CAPACITANCE
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
10
H1AL - H1DL
1.0
H1GL
10
H1JL - H1ML
0.1
TJ = 25°C f = 1 MHz
TJ = 25°C
PULSE WIDTH 300us
0.01
1
0
0.2
1.2
1.4 1.6 1.8
0.4
0.6 0.8 1.0
100
1
4
10
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE ,VOLTS
REV. 1, 30-Dec-2011
~ 111 ~
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