HER1605PT [TSC]
16.0 AMPS. Glass Passivated High Efficient Rectifiers; 16.0安培。玻璃钝化高效整流二极管
| 型号： | HER1605PT |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 16.0 AMPS. Glass Passivated High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HER1601PT THRU HER1608PT
16.0 AMPS. Glass Passivated High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
16.0 Amperes
TO-3P/TO-247AD
Features
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Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
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Flammability Classification 94V-O
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
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Low power loss, high efficiency
High temperature soldering guaranteed:
260oC,.16”(4.06mm)from case for 10 seconds
Mechanical Data
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Cases: TO-3P/TO-247AD molded plastic
Terminals: Leads solderable per MIL-STD-750.
Method 2026
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PIN 1
PIN 3
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Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 grams
PIN 2
Positive CT
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HER
HER HER HER HER HER
HER
HER
Symbol
Type Number
Units
1601PT 1602PT 1603PT 1604PT 1605PT 1606PT 1607PT 1608PT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 200 300 400 600 800 1000
V
V
V
VRRM
VRMS
VDC
35
70 140 210 280 420 560 700
Maximum DC Blocking Voltage
50 100 200 300 400 600 800 1000
Maximum Average Forward Rectified
Current @TC =100℃
16.0
A
A
V
I(AV)
IFSM
VF
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
200
1.0
1.3
1.7
Maximum DC Reverse Current
@ TC=25℃ at Rated DC Blocking Voltage
@ TC=125℃
10.0
500
uA
uA
IR
Maximum Reverse Recovery Time ( Note 2 )
@TJ=25oC
Trr
50
85
80
60
nS
Typical Junction Capacitance ( Note 1 )
Operating Temperature Range
Storage Temperature Range
Cj
TJ
pF
℃
℃
-55 to +150
-55 to +150
TSTG
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Recover to 0.25A.
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RATINGS AND CHARACTERISTIC CURVES (HER1601PT THRU HER1608PT)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE 2)
0
50Vdc
(approx)
(-)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.3- TYPICAL REVERSE CHARACTERISTICS
PER LEG
1000
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
20
16
Tj=1250C
12
8
100
INDUCTIVE OR RESISTIVE LOAD
4
10
Tj=250C
0
0
50
100
150
CASE TEMPERATURE. (oC)
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
200
175
150
125
0.1
8.3ms Single Half Sine Wave
JEDEC Method
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
40
100
75
0
1
2
5
10
20
50
100
10
Tj=125oC
NUMBER OF CYCLES AT 60Hz
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
Pulse Width=300
1% Duty Cycle
s
1000
500
1
50-400V
600-1000V
200
100
50
Tj=25oC
50-300V
400V
600-1000V
Tj=250C
f=1MHz
Vsig=50mVp-p
20
10
0.1
0.2 0.4 0.6
0.8 1.0
1.2 1.4 1.6 1.8
2.0
0.1
0.5
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
REVERSE VOLTAGE. (V)
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