ES3A_1 [TSC]
3.0 AMPS. Surface Mount Super Fast Rectifiers; 3.0安培。表面贴装超快速整流器
| 型号： | ES3A_1 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. Surface Mount Super Fast Rectifiers |
| 文件： | 总2页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3A - ES3J
3.0 AMPS. Surface Mount Super Fast Rectifiers
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
Features
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Glass passivated junction chip
For surface mounted applications
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
Super fast recovery time for high efficiency
Glass passivated chip junction
.103(2.62)
.079(2.00)
.061(1.56)
.050(1.26)
High temperature soldering:
260oC/10 seconds at terminals
.008(.20)
.004(.10)
.063(1.6)
.039(1.0)
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Plastic material used carries Underwriters
Laboratory Classification 94V-0
.320(8.13)
.305(7.75)
Mechanical Data
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Cases: Molded plastic
Dimensions in inches and (millimeters)
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
ES
ES
ES
ES
ES
ES
3G
ES
3H
ES
3J
Symbol
Type Number
Units
3A
3B
3C
3D
3F
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method ) @TL = 100 oC
3.0
A
A
V
I(AV)
100
IFSM
Maximum Instantaneous Forward Voltage
@ 3.0A
0.95
45
1.3
1.7
VF
IR
Maximum DC Reverse Current @ TA =25 oC
at Rated DC Blocking Voltage @ TA=100 oC
10
500
35
uA
uA
nS
pF
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Trr
Cj
30
R
47
12
θJA
oC /W
R
θJL
oC
oC
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +150
-55 to +150
T
STG
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
Notes:
3. Units Mounted on P.C.B. with 0.6” x 0.6”(16mm x 16mm) Copper Pad Areas
Version: B07
RATINGSAND CHARACTERISTIC CURVES (ES3A THRU ES3J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
CURVE
150
125
100
75
3
2
1
0
RESISTIVE OR
INDUCTIVE LOAD
8.3ms Single Half Sine Wave
o
(JEDEC Method) at TL=120 C
50
P.C.B. MOUNTED ON
25
0.6X0.6"(16X16mm) COPPER PADS
0
100
10
NUMBER OF CYCLES AT 60Hz
1
80
90
100
110
120
130
140
150
o
LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL INSTANTANEOUS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
FORWARD CHARACTERISTICS
1000
100
10
100
0
Tj=25 C
PULSE WIDTH-300
S
0
Tj=100 C
1% DUTY CYCLE
10
- D
3A
ES
- G
ES3F
0
Tj=75 C
1
- J
ES3H
1
0
Tj=25 C
0.1
0.1
0.01
0.01
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
105
0
Tj=25 C
90
f=1.0MHz
Vsig=50mVp-p
75
10
60
45
1
30
15
0
0.1
0.01
0.1
1
10
100
10
REVERSE VOLTAGE. (V)
100
1
T, HEATINGTIME (sec.)
FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TESTCIRCUIT DIAGRAM
50W
10W
NONINDUCTIVE
trr
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
PULSE
0
50Vdc
(approx)
(-)
GENERATOR
(NOTE 2)
-0.25A
1W
OSCILLOSCOPE
(NOTE 1)
(+)
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
1cm
SET TIME BASE FOR
5/ 10ns/ cm
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Version: B07
相关型号：
ES3A_15
Surface Mount Glass Passivated Superfast Rectifier Reverse Voltage 50 to 600V Forward Current 3A
GOOD-ARK
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