BC858BRFG [TSC]
250mW, PNP Small Signal Transistor; 为250mW ， PNP小信号晶体管
| 型号： | BC858BRFG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 250mW, PNP Small Signal Transistor |
| 文件： | 总4页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector
A
F
2 Emitter
1 Base
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
C
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
Min
Max
Mechanical Data
Case : SOT- 23 small outline plastic package
A
B
C
D
E
F
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.043
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Ordering Information
Suggested PAD Layout
Part No.
BC856A RF
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packing
Marking
3A
0.95
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
0.037
BC856B RF
BC857A RF
BC857B RF
BC857C RF
BC858A RF
BC858B RF
BC858C RF
BC856A RFG
BC856B RFG
BC857A RFG
BC857B RFG
BC857C RFG
BC858A RFG
BC858B RFG
BC858C RFG
3B
3E
3F
2.0
0.079
3G
3J
0.9
0.035
3K
0.8
3L
0.031
3A
3B
3E
3F
3G
3J
3K
3L
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
Power Dissipation
PD
250
-80
-50
-30
-65
-45
-30
-5
mW
BC856
BC857
BC858
BC856
BC857
BC858
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
V
V
VCEO
VEBO
IC
Emitter-Base Voltage
V
A
Collector Current
-0.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
Min
-80
-50
-30
-65
-45
-30
Max
Units
BC856
BC857
BC858
BC856
BC857
BC858
V(BR)CBO
IC= -10μA IE= 0
-
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V
V(BR)CEO
IC= -10mA IB= 0
-
V
V(BR)EBO
ICBO
IE= -1μA
IC= 0
-5
-
-
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V
V
V
CB= -30V IE= 0
-15
-0.1
nA
μA
IEBO
EB= -5V
IC=0
-
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
125
220
420
250
475
800
hFE
VCE= -5V
IC= -2mA
DC current gain
VCE(sat)
VBE(sat)
fT
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
IC= -100mA IB= -5mA
IC= -100mA IB= -5mA
-
-
-0.65
-1.1
-
V
V
V
CE= -5V
IC= -10mA
100
f= 100MHz
MHz
Tape & Reel specification
Item
Symbol Dimension(mm)
A
B
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
Carrier width
TSC label
Carrier length
C
Carrier depth
Top Cover Tape
d
Sprocket hole
D
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
D1
D2
E
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
Carieer Tape
F
Any Additional Label (If Required)
P0
P1
T
W
W1
P0
d
Reel width
P1
T
E
A
F
W
C
B
W1
Direction of Feed
D
D2
D1
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-50
1000
-45
IB = - 400µA
VCE = - 5V
IB = - 350µA
-40
IB = - 300µA
-35
IB = - 250µA
-30
-25
-20
-15
-10
-5
IB = - 200µA
IB = - 150µA
100
IB = - 100µA
IB = - 50µA
10
-0.1
-0
-1
-10
-100
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation
Figure 4. Base-Emitter On Voltage
-10
-100
IC = 10 IB
VCE = - 5V
VBE(sat)
-1
-10
-0.1
-1
VCE(sat)
-0.01
-0.1
-0.1
-1
-10
-100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
1000
f=1MHz IE=0
f=1MHz IE=0
10
100
1
10
-1
-10
-100
-1
-10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Version : E11
BC856A/B, BC857A/B/C, BC858A/B/C
250mW, PNP Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Figure 8. Base-emitter voltage as a function of
collector current; typical values
Figure 7. DC current gain as a function of
collector current; typical values
VBE-IC
Version : E11
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