BC858BRTR13 [CENTRAL]

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3;
BC858BRTR13
型号: BC858BRTR13
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

开关 光电二极管 晶体管
文件: 总2页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
BC856 SERIES  
BC857 SERIES  
BC858 SERIES  
Central  
Semiconductor Corp.  
DESCRIPTION:  
SURFACE MOUNT  
The CENTRAL SEMICONDUCTOR BC856,  
BC857 and BC858 Series types are PNP Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for general purpose switching  
and amplifier applications.  
PNP SILICON TRANSISTOR  
MARKING CODE: PLEASE SEE MARKING  
CODE TABLE ON FOLLOWING PAGE  
Note: Reverse Lead Codes Available, Add “R” to  
the end of the Part # and Marking Code.  
SOT-23 CASE  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
BC858  
30  
30  
BC857  
50  
BC856  
80  
65  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
V
V
CBO  
CEO  
EBO  
45  
5.0  
V
I
100  
200  
200  
350  
C
mA  
Peak Collector Current  
Peak Base Current  
I
CM  
mA  
I
mA  
BM  
Power Dissipation  
P
mW  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
357  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
15  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
= 30V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
= 30V, T =150°C  
A
4.0  
=5.0V  
I =10µA (BC858)  
100  
BV  
BV  
BV  
BV  
BV  
BV  
BV  
30  
50  
80  
30  
45  
65  
5.0  
CBO  
CBO  
C
I =10µA (BC857)  
V
C
I =10µA (BC856)  
V
CBO  
C
I =10mA (BC858)  
V
CEO  
C
I =10mA (BC857)  
V
CEO  
C
I =10mA (BC856)  
V
CEO  
C
I =10µA  
V
EBO  
E
V
V
V
V
I =10mA, I =0.5mA  
0.3  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
C
B
B
I =100mA, I =5.0mA  
0.65  
0.75  
0.82  
V
C
I =2.0mA, V =5.0V  
CE  
0.6  
V
C
I =10mA, V =5.0V  
V
C
CE  
C
f
V
=5.0V, I =10mA, f=100MHz  
=5.0V, I =200µA,  
C
100  
MHz  
T
CE  
CE  
NF  
V
R =2KΩ, f= 1KHz, BW=200Hz  
10  
dB  
S
BC856A  
BC857A  
BC858A  
BC856B  
BC857B  
BC858B  
BC857C  
BC858C  
MIN  
125  
MAX  
250  
MIN  
220  
MAX  
475  
MIN  
420  
MAX  
h
V
=5.0V, I =2.0mA  
800  
FE  
CE  
C
R1 (10-September 2004)  
TM  
BC856 SERIES  
BC857 SERIES  
BC858 SERIES  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
SOT-23 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
STANDARD  
*REVERSE  
1) BASE  
1) EMITTER  
2) BASE  
2) EMITTER  
3) COLLECTOR  
3) COLLECTOR  
DEVICE  
BC856A  
BC856B  
BC857A  
BC857B  
BC857C  
BC858A  
BC858B  
BC858C  
MARKING CODE  
3A  
3B  
3E  
3F  
3G  
3J  
3K  
3L  
* Reverse Lead Codes Available, Add “R” to the end of the  
Part # and Marking Code.  
R1 (10-September 2004)  

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