1SS400 [TSC]

200mW, SMD High Speed Switching Diode; 为200mW , SMD高速开关二极管
1SS400
型号: 1SS400
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

200mW, SMD High Speed Switching Diode
为200mW , SMD高速开关二极管

二极管 开关
文件: 总3页 (文件大小:349K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1SS400  
200mW, SMD High Speed Switching Diode  
Small Signal Diode  
SOD-523F  
B
Features  
C
A
E
—Fast switching device(Trr<4.0nS)  
—Surface device type mounting  
—Moisture sensitivity level 1  
—Matte Tin(Sn) lead finish  
—Pb free version,RoHS compliant  
D
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
F
Unit (mm)  
Unit (inch)  
Min Max  
Mechanical Data  
—Case : Flat lead SOD-523F small outline plastic package  
Dimensions  
Min  
Max  
A
B
C
D
E
F
0.70 0.90 0.028 0.035  
1.50 1.70 0.059 0.067  
0.25 0.40 0.010 0.016  
1.10 1.30 0.043 0.051  
0.60 0.70 0.024 0.028  
0.10 0.14 0.004 0.006  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 1.68±0.5 mg  
—Marking Code : A  
Ordering Information  
Pin Configuration  
Part No.  
1SS400  
1SS400  
Packing Code  
Package  
SOD-523F  
SOD-523F  
Packing  
Marking  
RK  
3K / 7" Reel  
3K / 7" Reel  
A
A
RKG  
Suggested PAD Layout  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
200  
Units  
mW  
V
Power Dissipation  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
VRRM  
VR  
100  
100  
V
Mean Forward Current  
IO  
200  
mA  
mA  
°C/W  
°C  
Peak Forward Surge Current  
Thermal Resistance (Junction to Ambient)  
Storage Temperature Range  
IFSM  
500  
RθJA  
TJ,TSTG  
625  
-55 to + 150  
Version :A11  
1SS400  
200mW, SMD High Speed Switching Diode  
Small Signal Diode  
Electrical Characteristics  
Type Number  
Symbol  
V(BR)  
VF  
Min  
Max  
-
Units  
V
100uA  
100mA  
80V  
100  
Breakdown Voltage  
IR=  
IF=  
Forward Voltage  
-
-
1.20  
0.1  
4
V
IR  
μA  
nS  
pF  
Reverse Leakage Current  
VR=  
TRR  
CJ  
Reverse Recovery Time  
Junction Capacitance  
IF=10mA  
VR=6V  
RL=100Ω  
f=1.0MHz  
VR=0.5V,  
-
4.0  
Tape & Reel specification  
TSC label  
Item  
Symbol  
Dimension(mm)  
1.7 ± 0.10  
3.73 ± 0.10  
1.68 ±0.10  
1.5 ± 0.1  
Carrier width  
A
B
Top Cover Tape  
Carrier length  
Carrier depth  
Sprocket hole  
C
d
Carieer Tape  
Reel outside diameter  
Reel inner diameter  
Feed hole width  
D
178 ± 1  
D1  
D2  
E
55 Min  
Any Additional Label (If Required)  
13.0 ± 0.20  
1.75 ±0.10  
3.50 ±0.05  
4.00 ±0.10  
2.00 ±0.05  
0.23 ± 0.05  
8.00 ±0.20  
14.4 Max  
P0  
Sprocke hole position  
Punch hole position  
Sprocke hole pitch  
Embossment center  
Overall tape thickness  
Tape width  
d
P1  
F
T
E
P0  
P1  
T
A
F
W
C
B
W
W1  
Reel width  
W1  
D
D2  
D1  
Version : A11  
1SS400  
200mW, SMD High Speed Switching Diode  
Small Signal Diode  
Rating and Characteristic Curves  
Fig. 2 Forward Voltage vs Ambient  
Temperature  
Fig. 1 Total Capacitance  
Fig. 4 Reverse Current vs Reverse  
VoltageRe erse  
Fig.  
Version : A11  

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