TIP142F [TRSYS]

SILICON PLANAR DARLINGTON POWER TRANSISTORS; 硅平面达林顿功率晶体管
TIP142F
型号: TIP142F
厂家: TRANSYS Electronics Limited    TRANSYS Electronics Limited
描述:

SILICON PLANAR DARLINGTON POWER TRANSISTORS
硅平面达林顿功率晶体管

晶体 晶体管 局域网
文件: 总2页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Transys  
Electronics  
L
I M I T E D  
SILICON PLANAR DARLINGTON POWER TRANSISTORS  
TIP140F, 141F, 142F NPN  
TIP145F, 146F, 147F PNP  
TO- 3P Fully Isolated  
Plastic Package  
B
C
E
For use in Power Linear and Switching Applications  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
TIP140F  
TIP145F  
60  
TIP141F  
TIP146F  
80  
TIP142F  
TIP147F  
100  
UNIT  
VCBO  
VCEO  
VEB0  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
A
W
60  
80  
100  
5.0  
10  
Collector Current  
ICM  
20  
Collector Peak Current (repetitive)  
Base Current  
IB  
0.5  
Total Power Dissipation @ Tc <25ºC  
PD  
60  
Operating And Storage Junction  
Temperature Range  
Tj, Tstg  
- 65 to +150  
1.0  
ºC  
THERMAL RESISTANCE  
From Junction to case  
Rth (j-c)  
ºC/W  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
TEST CONDITION  
VCB =Rated VCBO, IE=0  
VCE =1/2 rated VCEO, IB=0  
VEB =5.0 V, IC=0  
MIN  
TYP MAX  
DESCRIPTION  
SYMBOL  
ICBO  
UNIT  
mA  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
Collector-Emitter Sustaining Voltage  
1.0  
2.0  
2.0  
ICEO  
mA  
IEBO  
mA  
*VCEO (sus)  
IC =30mA, IB=0  
TIP140F/145F  
TIP141F/146F  
60  
80  
100  
V
V
V
TIP142F/147F  
*VCE (sat)  
IC =5A, IB=10mA  
IC =10A, IB =40mA  
IC =10A, VCE =4 V  
Collector-Emitter Saturation Voltage  
2.0  
3.0  
3.0  
V
V
V
*VBE (on)  
*hFE  
Base-Emitter On Voltage  
DC Current Gain  
IC =5A, VCE =4V  
IC =10A, VCE =4 V  
1000  
500  
SWITCHING TIME  
DESCRIPTION  
TEST CONDITION  
IC=10A, IB1=40mA, IB2=  
- 40mA, RL=3W  
MIN  
TYP MAX  
SYMBOL  
UNIT  
ms  
ton  
toff  
Turn on time  
Turn off time  
0.9  
4.0  
ms  
*Pulsed : Pulse duration=200ms, duty cycle=1.5%  
TIP140F, 141F, 142F NPN  
TIP145F, 146F, 147F PNP  
TO- 3P Fully Isolated  
Plastic Package  
TO-3P (TO-218) Plastic Package  
B
A
DIM  
A
MIN  
MAX  
D
C
15.80 16.40  
B
5.20  
3.80  
5.70  
4.20  
C
D
E
G
Ø 3.30 Ø 3.60  
14.50 15.10  
33.25 36.75  
20.75 21.25  
11.50 12.25  
E
S
H
F
G
H
K
F
1.00  
1.30  
L
1
2
L
18.75 21.65  
3
0.40  
3.15  
5.21  
0.60  
3.45  
5.72  
M
N
P
K
M
N
S
18.75 19.25  
P
P
All diminsions in mm.  
1
2
3
Pin Configuration  
1. Base  
2. Collector  
3. Emitter  
Packing Detail  
PACKAGE  
STANDARD PACK  
INNER CARTON BOX  
OUTER CARTON BOX  
Details  
Net Weight/Qty  
Size  
Qty  
Size  
Qty  
Gr Wt  
TO-3P  
100 pcs/polybag 628 gm/100 pcs 3" x 7.5" x 7.5"  
0.3K  
17" x 15" x 13.5"  
4.8K  
42 kgs  

相关型号:

TIP142FTU

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
FAIRCHILD

TIP142G

Darlington Complementary Silicon Power Transistors
ONSEMI

TIP142NPN

SILICON PLANAR DARLINGTON POWER TRANSISTORS
CDIL

TIP142T

Monolithic Construction With Built In Base- Emitter Shunt Resistors
FAIRCHILD

TIP142T

NPN外延硅达林顿晶体管
ONSEMI

TIP142T

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMICROELECTR

TIP142T

POWER TRANSISTORS(10A,60-100V,80W)
MOSPEC

TIP142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS
TRSYS

TIP142T

Monolithic Construction With Built In Base-Emitter Shunt Resistors
SEMIHOW

TIP142T

isc Silicon NPN Darlington Power Transistor
ISC

TIP142T

Power Bipolar Transistor, 10A I(C), NPN
CDIL

TIP142T

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CENTRAL