TIP142T [ISC]

isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
TIP142T
型号: TIP142T
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Darlington Power Transistor
ISC的硅NPN达林顿功率晶体管

晶体 晶体管 放大器 局域网
文件: 总2页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
TIP142T  
DESCRIPTION  
·High DC Current Gain-  
: hFE = 1000(Min)@ IC= 5A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 100V(Min)  
·Complement to Type TIP147T  
APPLICATIONS  
·Designed for general purpose amplifier and low speed  
switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
100  
100  
5
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current- Continuous  
10  
A
ICM  
15  
A
IB  
0.5  
A
Collector Power Dissipation  
@TC=25℃  
PC  
80  
W
Tj  
Junction Temperature  
150  
-55~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
Thermal Resistance, Junction to Case  
1.56 /W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
TIP142T  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff current  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
IC= 30mA, IB= 0  
100  
IC= 5A ,IB= 10mA  
IC= 10A ,IB= 40mA  
IC= 10A ,IB= 40mA  
IC= 10A ; VCE= 4V  
VCB= 100V, IE= 0  
VCE= 50V, IB= 0  
VEB= 5V; IC= 0  
2.0  
3.0  
3.5  
3.0  
1
V
-1  
(sat)  
V
VCE  
-2  
(sat)  
V
VBE  
(sat)  
V
VBE  
(on)  
ICBO  
mA  
mA  
mA  
ICEO  
Collector Cutoff current  
2
IEBO  
Emitter Cutoff Current  
2
hFE-1  
DC Current Gain  
IC= 5A ; VCE= 4V  
IC= 10A ; VCE= 4V  
1000  
500  
hFE-2  
DC Current Gain  
Switching Times  
Delay Time  
0.15  
0.55  
2.5  
μs  
μs  
μs  
μs  
td  
tr  
Rise Time  
Storage Time  
Fall Time  
VCC = 30 V, IC = 5.0 A,  
IB1= -IB2= 20 mA; tp= 20μs  
Duty Cycle20%  
tstg  
2.5  
tf  
isc Websitewww.iscsemi.cn  

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