MBR20030R [TRSYS]

SCHOTTKY DIODES MODULE TYPE 200A; 肖特基二极管模块式200A

MBR20030R


型号：	MBR20030R
厂家：	TRANSYS Electronics Limited
描述：	SCHOTTKY DIODES MODULE TYPE 200A 肖特基二极管模块式200A 肖特基二极管
文件：	总2页 (文件大小：121K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Transys

MBR20020(R)

THRU

MBR200100(R)

Electronics

L

I M I T E D

SCHOTTKY DIODES MODULE TYPE 200A

Features

High Surge Capability

Types Up to 100V V

200Amp Rectifier

20-100 Volts

RRM

HALF PACKAGE

G

Maximum Ratings

D

Operating Temperature: -40 C to

+175

+175

Storage Temperature: -40 C to

J

B

Maximum

Maximum DC

Blocking

K

F

Part Number

Recurrent

Maximum

Peak Reverse RMS Voltage

Voltage

Voltage

MBR20020( R )

MBR20030( R )

MBR20035( R )

MBR20040( R )

MBR20045( R )

20V

30V

35V

40V

45V

60V

80V

14V

21V

25V

28V

32V

42V

56V

20V

30V

35V

40V

45V

60V

80V

E

C

H

MBR20060( R )

MBR20080( R )

A

L

MBR200100( R )

100V

100V

70V

Baseplate

Common Cathode

Baseplate

R=Common Anode

Electrical Characteristics @ 25 Unless Otherwise Specified

Average Forward

I^F(AV)

DIMENSIONS

T_C=136

200A

Current

INCH

ES

MM

Peak Forward Surge

IFSM

,

3000A

8.3ms

sine

half

DIM

A

MIN

MAX

MIN

MAX

NOTE

Current

39.62

1.515

.725

.595

1.560

38.48

18.42

0.65V

0.75V

0.84V

(MBR20020~MBR20045)

(MBR20060)

Maximum

Instantaneous

NOTE (1)

B

19.69

15.88

30.28

19.18

4.061

.775

.625

1.192

.755

V_F

C

(MBR20080~MBR200100)

15.11

30.02

18.92

3.86

I

=200 A; T = 25

j

Forward Voltage

FM

D

.1.182

.745

E

F

Maximum

.152

1/4

.160

Instantaneous

Reverse Current At

Rated DC Blocking

m

5.0

A

T_J= 25

I_R

G

UNC

13.72

3.96

-

20

- 2B

14.73

4.06

125

T_J=

mA

250

.540

.156

H

J

.580

.160

.505

.130

NOTE (1)

Voltage

12.57

3.05

12.83

3.30

.495

.120

K

L

Maximum Thermal

Resistance Junction

To Case

R j c

0.8

/W

NOTE :

(1)

usec,

Pulse Test: Pulse Width 300

Duty Cycle

<

2%

MBR20020(R) THRU MBR200100(R)

Figure .2-

Forward Derating Curve

Figure .1-Typical Forward Characteristics

s

1000

e

r

200

e

P

600

T

J

=25

m

A

-

s

400

160

e

t

r

n

e

p

e

r

r

u

m

200

C

A

s

120

d

-

p

MBR20020~

MBR20040

e

i

f

t

m

i

t

n

A

100

c

s

e

r

e

p

r

R

m

80

u

d

r

A

60

C

A

w

r

d

r

o

F

40

a

MBR20060

40

w

r

e

g

Single Phase, Half Wave

o

a

r

F

60Hz Resistive or Inductive Load

E

v

20

s

u

A

o

e

0

0

30

MBR20080~

MBR200100

60

90

120

150

180

n

10

6.0

4.0

a

t

n

a

t

Case Te mperature -

S

n

I

2.0

1.0

0

0.2

0.4

0.6

0.8

1.0

1.2

Figure .4-Typical Reverse Characteristics

Volts

2000

1000

600

Instantaneous Forward Voltage - Volts

Tj =150 C

400

200

s

e

r

100

60

e

p

m

Figure

.3-Peak Forward Surge Current

40

l

l

i

Tj =125 C

3500

M

8.3ms Single Half

Sine Wave

20

-

t

n

s

3000

e

r

e

r

r

10

JEDEC method

T

=25

e

p

J

s

u

C

6

p

m

A

2500

2000

1500

1000

-

t

m

e

4

g

A

n

e

a

k

r

r

a

u

2

e

C

L

e

e

T

J

=75

g

r

1

s

r

u

.6

e

v

S

d

r

e

R

.4

a

w

r

s

u

o

e

n

o

F

k

a

.2

.1

e

a

t

P

500

1

n

a

t

100

80

60

4

6

8 10 20

Cycles

40

2

s

.06

.04

n

I

T

J

=25

.02

.01

Number Of Cycles At 60Hz - Cycles

100

0

10

40 50 60 70 80

20 30

90

Volts

Reverse Voltage - Volts

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