2SD880GRL [TRSYS]
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| 型号： | 2SD880GRL |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总1页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-220 Plastic-Encapsulated Transistors
2SD880 TRANSISTOR (NPN)
TO—220
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
3. EMITTER
PCM:
1.5 W (Tamb=25℃)
Collector current
ICM:
1 2 3
3
A
V
Collector-base voltage
V(BR)CBO
:
60
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
60
60
7
TYP
MAX
UNIT
V
Ic=100µA, IE=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Ic=50mA, IB=0
V
IE= 100µA, IC=0
VCB=60V, IE=0
V
100
100
300
1
µA
µA
IEBO
VEB=7V, IC=0
hFE
VCE=5V, IC=500mA
IC=3A, IB=300mA
IC=0.5A, VCE= 5V
VCE=5 V, IC=500mA
VCE=10V, IE=0, f=1MHz
60
VCE (sat)
VBE
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
1
f T
3
MHz
pF
µs
70
Collector output capacitance
Turn on time
Cob
ton
0.8
1.5
0.8
IB1=-IB2=0.2A, IC=2A
t s
µs
Storage time
VCC=30V, PW=20µs
t f
µs
Fall time
CLASSIFICATION OF hFE
Rank
O
Y
GR
60-120
100-200
150-300
Range
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