2SD880GRP [MCC]
TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, TO-220, 3 PIN, BIP General Purpose Power;型号: | 2SD880GRP |
厂家: | Micro Commercial Components |
描述: | TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, TO-220, 3 PIN, BIP General Purpose Power 晶体 晶体管 功率双极晶体管 放大器 局域网 |
文件: | 总2页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M C C
Micro Commercial Components
2SD880-Q
2SD880-Y
2SD880-GR
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Features
•
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
NPN Silicon
Power Transistors
RoHS Compliant. See ordering information)
Power amplifier applications
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
•
·
·
Maximum Ratings
Symbol
TO-220
Rating
Rating
Unit
C
VCEO
VCBO
VEBO
IC
PC
TJ
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
60
60
7
3
1.5
V
V
V
B
S
F
A
Q
W
R
R
T
-55 to +150
A
TSTG
-55 to +150
U
Electrical Characteristics @ 25OC Unless Otherwise Specified
1
2
3
Symbol
Parameter
Min
Type
Max
Units
H
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
Collector-Base Cutoff Current
(VCB=60Vdc,IE=0)
60
60
7
---
---
---
---
---
---
---
Vdc
Vdc
K
---
Vdc
V
L
J
---
---
100
100
uAdc
uAdc
D
R
G
IEBO
Emitter-Base Cutoff Current
(VEB=7Vdc, IC=0)
N
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
ON CHARACTERISTICS
hFE
VCE(sat)
VBE
Forward Current Transfer ratio
DIMENSIONS
(IC=500mAdc, VCE=5Vdc)
Collector-Emitter Saturation Voltage
(IC=3Adc, IB=300mAdc)
Base-Emitter Voltage
(IC=0.5Adc,VCE=5Vdc)
60
---
---
---
300
1
---
Vdc
INCHES
MM
MIN
14.22
9.65
MAX
15.88
10.67
NOTE
DIM
A
MIN
MAX
.625
.560
.380
.140
B
C
.420
.190
---
---
---
---
3
1
Vdc
MHz
pF
3.56
4.82
D
F
.020
.139
.190
---
.045
.161
.110
.250
.025
0.51
3.53
2.29
---
1.14
4.09
2.79
6.35
0.64
fT
Transistor Frequency
---
---
(IC=500mAdc, VCE=5Vdc)
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz)
G
H
J
Cob
70
.012
0.30
K
L
.500
.045
.580
.060
12.70
1.14
14.73
1.52
ton
ts
tf
Turn on time
Storage time
Fall time
---
---
---
0.8
1.5
0.8
---
---
---
us
us
us
IB1=-IB2=0.2A, IC=2A,
VCC=30V, PW=20us
N
.190
.210
4.83
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
3.43
2.92
1.39
6.86
1.27
-----
Classification OF hFE(1)
Rank
Range
Q
Y
GR
150-300
60-120
100-200
.045
1.15
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
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Revision: A
2011/01/01
M C C
Micro Commercial Components
TM
Ordering Information :
Device
Packing
Part Number-BP
Bulk;1Kpcs/Box
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distributors.
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