CGB240_技术文档

CGB 240

Datasheet

2-Stage Bluetooth InGaP HBT Power Amplifier

Applications:

Description:

• Bluetooth Class 1

The CGB240 GaAs Power Amplifier MMIC has been

especially developed for wireless applications in the

2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its

high power added efficiency and single positive sup-

ply operation makes the device ideally suited to

handheld applications. The device delivers 23 dBm

output power at a supply voltage of 3.2 V, with an

overall PAE of 50%. The output power can be ad-

justed using an analog control voltage (V_CTR). Simple

external input-, interstage-, and output matching cir-

cuits are used to adapt to the different requirements

of linearity and harmonic suppression in various ap-

plications.

• Cordless Phones

• Home RF

For WLAN applications (IEEE802.11b) or appli-

cations serving both WLAN and Bluetooth, we

recommend to use the CGB240B device.

Package Outline:

Features:

• Single voltage supply.

1

• Wide operating voltage range 2.0 - 5.5 V.

• P_OUT= 23 dBm at V_C= 3.2 V.

5

• Overall power added efficiency (PAE) typi-

cally 50%.

TSSOP-10-2

MSOP-10

• High PAE at low–power mode.

Pin Configuration:

• Analog power control with four power

steps.

1 & 2:

Vc1

3:

RF In

NC

Vcntrl1

Vcntrl2

Vc2

• Straight-Forward Matching; Few external

4, 5, & 10:

6:

7:

8 & 9:

components.

11 (Paddle): GND

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 2/13

CGB 240 Datasheet

Absolute Maximum Ratings:

Parameter

Supply voltage- CW

Symbol

V_cc

Min.

Max.

5.5

Units

V_dc

0

V_cc

V_dc

Supply voltage- Pulsed

Power control voltage

DC supply current- Stage 1

DC supply current- Stage 2

5.0

V_apc

3.2

V

I_cc

40.0

160.0

0.5

mA

W

I_cc

Total Power Dissipation¹

P_TOT

P_{IN, MAX}

P_{OUT, MAX}

T_a

RF Input Power²

+10

+25

85

dBm

ºC

RF Output Power²

Operating case temperature

Storage temperature

-20

-55

T_s

150

ºC

¹Thermal resistance between junction and pad 11 ( = heatsink ): R_THCH= 100 K/W.

²No RF input signal should be applied before turn-on of DC Power. An output VSWR of 1:1 is as-

sumed.

Electrical Characteristics of CGB240 Device used in Bluetooth PA Reference

Design (See Application Note 1)

T_A= 25 °C; V_CC= 3.2 V; f = 2.4 ... 2.5 GHz; Z_IN= Z_OUT= 50 Ohms

Parameter

Symbol

Limit Values

typ max

125 150

Unit

Test Conditions

min

Supply Current

Small-Signal Operation

I_CC,SS

G_SS

P_OUT,1

I_CC,1

mA

dB

P_IN= - 10 dBm

V_CTR= 2.5 V

Power Gain

Small-Signal Operation

23

26

7

P_IN= - 10 dBm

V_CTR= 2.5 V

Output Power

Power Step 1

dBm

mA

%

P_IN= + 3 dBm

V_CTR= 1.15 V

Supply Current

Power Step 1

15

10

P_IN= + 3 dBm

V_CTR= 1.15 V

Power Added Efficiency

Power Step 1

PAE ₁

P_IN= + 3 dBm

V_CTR= 1.15 V

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 3/13

CGB 240 Datasheet

Electrical Characteristics of CGB240 used in PA Reference Design (cont.)

Parameter

Symbol

Limit Values

Unit

Test Conditions

Min

Typ

Max

Output Power

Power Step 2

P_OUT,2

I_CC,2

PAE ₂

P_OUT,3

I_CC,3

PAE ₃

P_OUT,4

I_CC,4

PAE ₄

h₂

12

dBm

mA

%

P_IN= + 3 dBm

V_CTR= 1.3 V

Supply Current

Power Step 2

25

20

P_IN= + 3 dBm

V_CTR= 1.3 V

Power Added Efficiency

Power Step 2

P_IN= + 3 dBm

V_CTR= 1.3 V

Output Power

Power Step 3

17

dBm

mA

%

P_IN= + 3 dBm

V_CTR= 1.5 V

Supply Current

Power Step 3

52

P_IN= + 3 dBm

V_CTR= 1.5 V

Power Added Efficiency

Power Step 3

32

P_IN= + 3 dBm

V_CTR= 1.5 V

Output Power

Power Step 4

22

40

23

24

-

dBm

mA

%

P_IN= + 3 dBm

V_CTR= 2.5 V

Supply Current

Power Step 4

125

50

P_IN= + 3 dBm

V_CTR= 2.5 V

Power Added Efficiency

Power Step 4

2^ndHarm. Suppression

Power Step 4

3^rdHarm. Suppression

Power Step 4

P_IN= + 3 dBm

V_CTR= 2.5 V

- 35

- 50

1

dBc

uA

P_IN= + 3 dBm

V_CTR= 2.5 V

h₃

P_IN= + 3 dBm

V_CTR= 2.5 V

Turn-Off Current

Off-State Isolation

Rise Time 1 )

Rise Time 2 ¹⁾

Fall Time 1 ¹⁾

I_CC,OFF

S_21,0

T_R1

V_CC= 3.2 V; V_CTR<

0.4 V; No RF Input

26

dB

P_IN= + 3 dBm

V_CTR= 0 V

1

6

µs

V_CC= 5.0 V

V_CTR= 0 to 1V Step

T_R2

µs

V_CC= 5.0 V

V_CTR= 0 to 3V Step

T_F1

µs

V_CC= 5.0 V

V_CTR= 1 to 0V Step

Fall Time 2 ¹⁾

T_F2

µs

V_CC= 5.0 V

V_CTR= 3 to 0V Step

Maximum Load VSWR

(no damage to device)

allowed for 10s

VSWR

P_IN= + 5 dBm; V_CC

4.8 V; V_CTR= 2.5 V

Z_IN= 50 Ohms

=

1) Rise time T_R:time between turn-on of V_CTRvoltage until reach of 90% of full output power level.

Fall time T_F:as time between turn-off of V_CTRvoltage until reach of 10% of full output power level.

Please note: Reduced Vccp,max for pulsed operation applies (see “absolute maximum ratings”).

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 4/13

CGB 240 Datasheet

S–Parameters for Linear Small-Signal Operation

T_A= 25 °C; V_CC= 2.8 to 3.2 V; V_CTR= 2.5 to 2.8 V; f = 2.4 ... 2.5 GHz

P_IN< - 4 dBm; Interstage match pin terminated with (1 + j 12.5) Ohms.

Parameter (Target Data)

Symbol

Typ. Value

0.67

Unit

Magnitude Input Reflection

MAG (S₁₁)

ANG (S₁₁)

MAG (S₂₁)

MAG (S₁₂)

MAG (S₂₂)

ANG (S₂₂)

Phase Input Reflection

+ 180

20

Degrees

dB

Magnitude Forward Power Gain ²⁾

Magnitude Reverse Power Gain ²)

Magnitude Output Reflection )

Phase Output Reflection ²)

– 47

dB

0.59

+ 147

Degrees

²)Measured for small signal conditions in pure 50 Ohm environment.

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 5/13

CGB 240 Datasheet

Typical Device Performance for Reference Design (see Application Note 1)

Valid for all plots: T_A= 25 °C; V_CC= 3.2 V; V_CTR= 2.5 V; f = 2.4 ... 2.5 GHz;

Z_IN= Z_OUT= 50 Ohms. Changes from these values noted.

Efficiency PAE = f ( V_CC)

P_IN= +3dBm

Output Power P_OUT= f ( V_CC)

P_IN= +3dBm

60,0

%

25,0

dBm

55,0

50,0

45,0

40,0

35,0

30,0

23,0

21,0

19,0

17,0

15,0

V

5,0

2,0

3,0

4,0

5,0

2,0

3,0

4,0

Supply Voltage Vcc

Supply Current I_CC= f ( V_CTR

P_IN= +3dBm

)

Output Power P_OUT= f ( V_CTR

P_IN= +3dBm

)

140,0

mA

25,0

Vcc=3.2V

dBm

20,0

120,0

Vcc=3.2V

Vcc=2.8V

100,0

80,0

60,0

40,0

20,0

0,0

15,0

10,0

5,0

Vcc=2.8V

0,0

-5,0

-10,0

1,0

1,5

2,0

2,5

3,0

1,0

1,5

2,0

2,5

3,0

V

Vctr

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 6/13

CGB 240 Datasheet

Output Power Compression P_OUT= f ( P_CIN

P_IN= +3dBm

)

Supply Current I_CC= f ( T_A)

P_IN= +3dBm, Vcc = 3.2V

25,0

150

mA

dBm

Vcc=3.2V

20,0

140

130

120

110

100

15,0

10,0

5,0

Vcc=2.8V

0,0

-20,0

-15,0

-10,0

-5,0

0,0

5,0

Deg C

80

-40

-20

0

20

40

60

dBm

Input Power Pin

Ambient Temperature Ta

Output Power P_OUT= f ( T_A)

P_IN= +3dBm

Small-Signal Gain S₂₁= f ( T_A)

P_IN= -10 dBm, Vcc = 3.2V

25

30

dB

dBm

24

23

22

21

20

28

26

24

22

20

Deg C

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Deg C

Ambient Temperature Ta

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 7/13

CGB 240 Datasheet

Pinning

1

5

TSSOP-10

MSOP-10

Figure 1

CGB240 Outline

Function

Pad

1

Symbol

V_C1

Supply voltage of 1^ststage / interstage match

RF input

2

V_C1

3

RF_IN

N.C.

V_CTR1

V_CTR2

V_C2

4

5

6

Control voltage 1^ststage

Control voltage 2^ndstage

Supply voltage of 2^ndstage / RF output

7

8

9

V_C2

10

11

N.C.

GND

RF and DC ground (pad located on backside of package)

Heatsink. Thermal resistance between junction – pad 11: R_THCH= 100

K/W.

Functional Diagram

(1,2)

Vc1

(3)

RFin

(8,9) Vc2

(11) Gnd

(6)

(7)

Vctr1

Vctr2

Figure 2

CGB240 Functional Diagram

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 8/13

CGB 240 Datasheet

Application Note 1: Bluetooth CGB240 PA Reference Design (TRL matching)

Vcc

R1

C5

C6

TRL2

L1

CGB240

1

10

C1

TRL1

TRL3

C2

C3

RF In

RF Out

5

6

11

C4

C7

Vctr

Figure 3

Schematic of Bluetooth CGB240 PA reference design.

Part

C1

Type

Value

22 pF

1.5 pF

2.2 pF

10 pF

1 µF

Outline

0402

0603

0402

0603

0402

0603

0402

Source

Part No.

Cer. Capacitor

Inductor

Murata COG

AVX ACCU-P

Murata COG

Murata X7R

Toko

C2

C3 )

C4

06035J1R5BBT

C5

C6

C7

1 nF

L1

22 nH

10 R

LL1608–FS

R1

Resistor

Mira

TRL1 )

TRL2 ⁴⁾

TRL3 ⁴⁾

Microstrip Line

l = 2,5 mm; FR4 substrate; h = 0,2 mm; w = 0,32 mm

l = 1,8 mm; FR4 substrate; h = 0,2 mm; w = 0,32 mm

l = 4,0 mm; FR4 substrate; h = 0,2 mm; w = 0,32 mm

³) Cost optimization might take place by using lower-Q AVX-CU capacitors instead of the AccuP ver-

sion. This will lead to better h₂performance, however resulting in a loss of about 2% PAE.

⁴) Line length measured from corner of capacitor to end of MMIC’s lead.

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 9/13

CGB 240 Datasheet

TriQuint Semiconductor, Inc.

R

1

C6

C5

C

3

CGB240

C2

C1

C

4

„White Dots“ =

Ground Vias

C7

RF Out

(SMA)

Figure 4

Layout of Bluetooth CGB240 PA reference design using TRL

matching (see application note 1).

Vc1 and Vc2 are connected together on the PCB.

Vctr1 and Vctr2 are connected together on the PCB.

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 10/13

CGB 240 Datasheet

Application Note 2: Bluetooth Power Amplifier using Discrete Matching

Vcc

C8

C6

L1

L4

CGB240

L2

C5

C2

C3

1

10

C1

C4

L3

RF In

RF Out

5

6

11

C7

Vctr

Figure 5

Bluetooth Amplifier using discrete matching.

Part

C1

C2

C3

C4

C5

C6

C7

C8

L1

Type

Value

22 pF

1.5 pF

2.0 pF

82 pF

0.1 µF

1 nF

Outline Source

Part No.

Cer. Capacitor

Inductor

0402

0603

0402

0603

0402

0603

0402

0603

Murata COG

AVX ACCU-P

Murata COG

Murata X7R

Toko

06035J1R5BBT

0.1 µF

22 nH

1.0 nH

22 nH

LL1005–FH22NJ

0402CS-1N0X_BG

LL1005–FH22NJ

L2

Inductor

Coilcraft

L3

Inductor

Coilcraft

L4

Inductor

Toko

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 11/13

CGB 240 Datasheet

TriQuint Semiconductor, Inc.

C6

C8

C5

C

3

CGB240

L3

C2

L2

C1

C

4

„White Dots“ =

Ground Vias

C7

RF In

(SMA)

RF Out

(SMA)

Figure 6

Layout of CGB240 Bluetooth evaluation board used in

application note 2.

For a discrete matching concept, the same evaluation board (V1.2) as shown in fig-

ure 5 might be used. However, to insert the series elements (L2, L3, L4), the pcb

lines have to be cut mechanically.

The use of a discrete matching concept saves pcb space but will lead to a lower out-

put power (typ. 0.3dB lower) and higher BOM cost.

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 12/13

CGB 240 Datasheet

Description of MSOP-10 Package

In order to ensure maximum mounting yield and optimal reliability, special soldering condi-

tions apply in volume production. Please ask for our information brochure on details or

download the related document (TSSOP10_Soldering_Version01.pdf) from our website.

The TSSOP-10-2 is a level 1 package. International standards for handling this type of pack-

age are described in the JEDEC standard J-STD-033 „STANDARD FOR HANDLING,

PACKING, SHIPPING AND USE OF MOISTURE/REFLOW SENSITIVE SURFACE-MOUNT

DEVICES“, published May-1999. The original document is available from the JEDEC website

www.jedec.org .

For further information please visit www.triquint.com

Rev. 1.6 October 20th, 2004

pg. 13/13

CGB 240 Datasheet

Part Marking:

Part Orientation on Reel:

Ordering Information:

Type

Marking

CGB240

Package

CGB240

MSOP-10

ESD: Electrostatic discharge sensitive device

Observe handling precautions !

Additional Information

For latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com

Tel: (503) 615-9000

Fax: (503) 615-8902

Email: info_wireless@tqs.com

For technical questions and additional information on specific applications:

Email: info_wireless@tqs.com

The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for

the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No

patent rights or licenses to any of the circuits described herein are implied or granted to any third party.

TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems.

Revision 1.5-December 16, 2003

For additional information and latest specifications, see our website: www.triquint.com

pg. 14/14

CGB 240 Datasheet

Additional Information

For latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com

Tel: (503) 615-9000

Fax: (503) 615-8902

Email: info_wireless@tqs.com

For technical questions and additional information on specific applications:

Email: info_wireless@tqs.com

The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for

the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No

patent rights or licenses to any of the circuits described herein are implied or granted to any third party.

TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems.

Revision 1.5-December 16, 2003

For additional information and latest specifications, see our website: www.triquint.com

pg. 15/14


型号：	CGB240
厂家：	TRIQUINT SEMICONDUCTOR
描述：	2-Stage Bluetooth InGaP HBT Power Amplifier 2级蓝牙的InGaP HBT功率放大器放大器功率放大器蓝牙
文件：	总14页 (文件大小：451K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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