CGB240B [TRIQUINT]
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier; 2级蓝牙和WLAN的InGaP HBT功率放大器
| 型号： | CGB240B |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier |
| 文件： | 总19页 (文件大小：639K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGB 240B
Datasheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
Applications:
The CGB240B GaAs power amplifier MMIC has been
especially developed for wireless LAN applications in the
2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b
standards. The chip is also fully compliant with Bluetooth
class 1 applications and thus can be used in dual-mode
(Bluetooth/WLAN) applications, too.
• WLAN
• IEEE 802.11a
• Bluetooth Class 1
While providing an effective channel power of 22dBm, the
ACPR is better than -33dB relative to the sinx/x spectral
peak of an IEEE802.11b–modulated TX signal. Each
CGB240B chip is individually tested for IP3, resulting in
guaranteed ACPR performance.
In a Bluetooth class 1 system, the CGB240B’s high power
added efficiency (up to 50%) and single positive supply
operation makes the device ideally suited for handheld
applications. The CGB240B delivers 23 dBm output power
at a supply voltage of 3.2 V, with an overall PAE of 50% in
saturated mode. The output power can be adjusted using
an analog control voltage (VCTR). Simple external input-,
interstage-, and output matching circuits are used to adapt
to the different requirements of linearity and harmonic
suppression in various applications2-stage InGaP HBT
power amplifier for WLAN and Bluetooth applications.
Package Outline:
1
5
P-TSSOP-10-2
Features:
• Pout = +23dBm at 3.2 V
Pin configuration:
• ACPR / IP3 tested to be compliant with IEEE802.11b
1 & 2:
Vc1
3:
RFin
NC
standard
4, 5, & 10:
6:
• Fully compliant with Bluetooth requirements (dual-mode
Vcntrl1
Vcntro2
Vc2
7:
use)
8 & 9:
11 (paddle)
• Single voltage supply
GND
• Wide operating voltage range 2.0 - 5.5 V
• Analog power control with four power steps
• Easy external matching concept
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 1/20
CGB240B Datasheet
Absolute Maximum Ratings:
Parameter
Symbol
Limit Values
Unit
min.
max.
5.5
Max. Supply Voltage CW
Max. Supply Voltage Pulsed
Max. Control Voltage
VCC, MAX
VCCP, MAX
VCTR, MAX
IC1, MAX
IC2, MAX
PTOT
0
0
0
0
0
V
5.0
V
3.5
V
Max. Current Stage 1
40
mA
mA
mW
dBm
dBm
°C
Max. Current Stage 2
180
650
+10
+25
+85
150
150
Max. Total Power Dissipation 1)
Max. RF Input Power 2)
Max. RF Output Power 2)
Operating Temperature Range
Max. Junction Temperature 1)
Storage Temperature
PIN, MAX
POUT, MAX
TA
- 40
- 55
TCh
°C
TStg
°C
1) Thermal resistance between junction and pad 11 ( = heatsink ): RTHCH = 100 K/W.
2) No RF input signal should be applied at turn on of DC Power. An output VSWR of 1:1 is assumed.
Typical Electrical Characteristics of CGB240B for IEEE802.11b Applications
(Typical data for CGB240B reference application board, see application note 1 )
TA = 25 °C; VCC = VCTR= 3.3 V; f = 2.45 GHz; ZIN,Board = ZOUT,Board = 50 Ohms
Parameter
Symbol
Limit Values
min typ max
Unit Test Conditions
Supply Current
ICC, SS
GSS
190
mA
dB
PIN = - 10 dBm
PIN = - 10 dBm
Small-Signal Operation
Power Gain
28
Small-Signal Operation
Adjacent Channel Power
Ratio
ACPR
– 33
dBr
POUT = +22dBm
f = fC ± f MOD
fC = 2.4..2.5 GHz
f MOD= 11..22 MHz.
Output Power
POUT
PAE
+22
25
dBm ACPR < -33dBr
POUT = +22dBm
Power Added Efficiency
%
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 2/20
CGB240B Datasheet
Electrical Characteristics of CGB240B Device used in Bluetooth PA Reference Design
(See Application Note 2)
TA = 25 °C; VCC = 3.2 V; f = 2.4 ... 2.5 GHz; ZIN,Board = ZOUT, Board = 50 Ohms
Parameter
Symbol
Limit Values
min typ max
150 mA
Unit
Test Conditions
Supply Current
ICC,SS
GSS
POUT,1
ICC,1
100
23
130
25
PIN = - 10 dBm
VCTR = 2.5 V
Small-Signal Operation
Power Gain
27
dB
PIN = - 10 dBm
VCTR = 2.5 V
Small-Signal Operation
Output Power
Power Step 1
7
dBm
mA
%
PIN = + 3 dBm
VCTR = 1.15 V
Supply Current
Power Step 1
15
PIN = + 3 dBm
VCTR = 1.15 V
Power Added Efficiency
Power Step 1
PAE 1
POUT,2
ICC,2
10
PIN = + 3 dBm
VCTR = 1.15 V
Output Power
Power Step 2
12
dBm
mA
%
PIN = + 3 dBm
VCTR = 1.3 V
Supply Current
Power Step 2
25
PIN = + 3 dBm
VCTR = 1.3 V
Power Added Efficiency
Power Step 2
PAE 2
POUT,3
ICC,3
20
PIN = + 3 dBm
VCTR = 1.3 V
Output Power
Power Step 3
17
dBm
mA
%
PIN = + 3 dBm
VCTR = 1.5 V
Supply Current
Power Step 3
52
PIN = + 3 dBm
VCTR = 1.5 V
Power Added Efficiency
Power Step 3
PAE 3
POUT,4
ICC,4
32
PIN = + 3 dBm
VCTR = 1.5 V
Output Power
Power Step 4
22
40
23
24
-
dBm
mA
%
PIN = + 3 dBm
VCTR = 2.5 V
Supply Current
Power Step 4
130
50
PIN = + 3 dBm
VCTR = 2.5 V
Power Added Efficiency
Power Step 4
PAE 4
h2
PIN = + 3 dBm
VCTR = 2.5 V
2nd Harm. Suppression
- 35
- 50
dBc
dBc
PIN = + 3 dBm
VCTR = 2.5 V
Power Step 4
3rd Harm. Suppression
Power Step 4
h3
PIN = + 3 dBm
VCTR = 2.5 V
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 3/20
CGB240B Datasheet
General Electrical Characteristics of CGB240B
Parameter
Symbol
Limit Values
min typ max
Unit Test Conditions
Turn-Off Current
ICC, OFF
1
uA
VCC = 3.2 V
VCTR < 0.4 V
No RF Input
Off-State Isolation
Rise Time 1 3)
Rise Time 2 3)
Fall Time 1 3)
S21, 0
TR1
26
dB
µs
µs
µs
µs
PIN = + 3 dBm
VCTR = 0 V
1
1
1
1
6
V
CC = 5.0 V
VCTR = 0 to 1V Step
TR2
V
CC = 5.0 V
VCTR = 0 to 3V Step
TF1
V
CC = 5.0 V
VCTR = 1 to 0V Step
Fall Time 2 3)
TF2
VCC = 5.0 V
VCTR = 3 to 0V Step
Maximum Load VSWR
allowed for 10s
VSWR
PIN = + 5 dBm
VCC = 4.8 V
VCTR = 2.5 V
ZIN = 50 Ohms
(no damage to device)
3) Rise time TR defined as time between turn-on of VCTR voltage until reach of 90% of full output
power level.
Fall time TF defined as time between turn-off of VCTR voltage until reach of 10% of full output power
level.
Please note: Reduced Vccp, max for pulsed operation applies (see “absolute maximum ratings”).
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 4/20
CGB240B Datasheet
Typical S–Parameters for IEEE802.11b Operation
TA = 25 °C; VCC = 3.3 V; VCTR = 3,3 V; Port 1: RF In (Pin 3); Port 2: RF Out (Pins 8/9)
PIN < - 10 dBm; Interstage match and DC bias circuit according to application note 1.
S11
S21
S12
S21
Frequency
(GHz)
Real
(x1)
Imag
(x1)
Real
(x1)
Imag
(x1)
Real
(x1)
Imag
(x1)
Real
(x1)
Imag
(x1)
0,2
0,31
-0,10
10,46
-2,89
0,20
1,73
0,0002
0,0001
-0,47
-0,02
0,4
0,6
0,8
1
0,29
0,17
0,04
-0,22
-0,31
-0,34
-0,35
-0,35
-0,34
-0,32
-0,27
-0,22
-0,11
-0,04
0,04
0,12
0,21
0,36
0,51
0,63
0,72
0,77
0,80
0,82
2,51
6,10
0,0001
-0,0004
-0,0001
0,0003
0,0004
0,0007
0,0008
0,0012
0,0026
0,0025
0,0026
0,0026
0,0034
0,0033
0,0044
0,0053
0,0061
0,0084
0,0088
0,0105
0,0119
0,0003
0,0015
0,0017
0,0022
0,0028
0,0030
0,0034
0,0043
0,0046
0,0051
0,0049
0,0048
0,0051
0,0055
0,0059
0,0066
0,0067
0,0070
0,0050
0,0051
0,0033
-0,60
-0,61
-0,60
-0,59
-0,57
-0,56
-0,55
-0,54
-0,50
-0,47
-0,46
-0,44
-0,43
-0,41
-0,35
-0,30
-0,24
-0,17
-0,12
-0,04
0,06
0,05
0,11
0,16
0,20
0,22
0,24
0,26
0,30
0,32
0,34
0,36
0,37
0,39
0,41
0,44
0,48
0,50
0,50
0,51
0,51
0,47
8,57
-0,46
-3,27
-6,18
-8,66
-10,46
-11,63
-12,67
-12,10
-11,58
-10,53
-9,49
-8,10
-4,99
-2,12
0,72
-0,06
-0,16
-0,27
-0,37
-0,47
-0,57
-0,67
-0,70
-0,73
-0,74
-0,74
-0,69
-0,63
-0,53
-0,41
-0,30
-0,21
-0,12
9,25
1,2
1,4
1,6
1,8
2
2,2
2,3
2,4
2,5
2,6
2,8
3
3,2
3,4
3,6
3,8
4
8,65
7,17
5,11
2,70
-0,36
-3,71
-5,32
-6,88
-8,18
-9,23
-10,40
-10,94
-10,59
-9,16
-7,78
-6,26
-4,62
3,05
4,53
5,45
6,47
Note: Table available as S2P file.
CGB240B
RF signal layer
200µm FR4
epoxy substrate
RF ground plane
Gnd via
Reference planes for
impedance measurements
Figure 1 Ground plane configuration and impedance reference planes.
The impedance reference plane is located at the center of the device pin, assuming
that a continuous microstrip ground plane exists and that low-inductance (e.g. 6-via)
connections of the device’s center ground pad (11) to the microstrip ground plane are
present.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 5/20
CGB240B Datasheet
Operational Impedances for Bluetooth Application
TA = 25 °C; VCC = 2.8 to 3.2 V; VCTR = 2.5 to 2.8 V; f = 2.4 ... 2.5 GHz
PIN = + 3 dBm (Large signal operation; PA in compression)
Parameter (Target Data)
Generator Impedance 4)
Interstage Termination 5)
Load Impedance
Symbol
ZGEN
ZIS
Typ. Value
9 - j 1
1 + j 12.5
Unit
Ohms
Ohms
Ohms
ZLOAD
15 + j 3
4) Generator impedance equals approximately conjugate complex input impedance: ZIN ≈ ZGEN
*
5) ZIS is the impedance to be presented to the interstage output (pin 1 and pin 2) of the device.
The given load impedance is optimized for output power in saturated mode
(Bluetooth) and does not represent the conjugate complex output impedance of the
device since large signal conditions apply.
CGB240B
RF signal layer
RF ground plane
200µm FR4
epoxy substrate
Gnd via
Reference planes for
impedance measurements
Figure 2 Ground plane configuration and impedance reference planes.
The impedance reference plane is located at the center of the device pin, assuming
that a continuous microstrip ground plane exists and that low-inductance (e.g. 6-via)
connections of the device’s center ground pad (11) to the microstrip ground plane are
present.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 6/20
CGB240B Datasheet
Typical Device Performance for IEEE802.11b Reference Design
(see Application Note 1)
Valid for all plots: TA = 25 °C; VCC = 3.3 V; VCTR = 3.3 V; f = 2.45 GHz;
Output Power Compression POUT = f ( PIN )
ACPR for IEEE802.11b Modulation
ACPR IEEE802.11b = f ( POUT
)
25
-20
dBr
dBm
24
-25
-30
-35
-40
23
22
21
20
-33 dBr
-10
-8
-6
-4
-2
0
20
21
22
23
24
dBm
dBm
Input Power
Output Power
Optimum Input Power PIN = f ( T )
Output Power POUT = f ( T )
ACPR IEEE802.11b< –33dBr
ACPR IEEE802.11b< –33dBr, POUT>22dBm
-5
22,5
dBm
dBm
-5,5
-6
22
21,5
21
-6,5
-7
20,5
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
°C
°C
Temperature
Temperature
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 7/20
CGB240B Datasheet
Typical Device Performance for Bluetooth Reference Design
(see Application Note 2)
Valid for all plots: TA = 25 °C; VCC = 3.2 V; VCTR = 2.5 V; f = 2.4 ... 2.5 GHz;
Efficiency PAE = f ( VCC )
PIN = +3dBm
Output Power POUT = f ( VCC )
PIN = +3dBm
60,0
%
25,0
dBm
55,0
50,0
45,0
40,0
35,0
30,0
23,0
21,0
19,0
17,0
15,0
V
V
2,0
3,0
4,0
5,0
2,0
3,0
4,0
5,0
Supply Voltage Vcc
Supply Voltage Vcc
Supply Current ICC = f ( VCTR
PIN = +3dBm
)
Output Power POUT = f ( VCTR
PIN = +3dBm
)
140,0
mA
25,0
Vcc=3.2V
dBm
20,0
120,0
Vcc=3.2V
Vcc=2.8V
100,0
80,0
60,0
40,0
20,0
0,0
15,0
10,0
5,0
Vcc=2.8V
0,0
-5,0
-10,0
1,0
1,5
2,0
2,5
3,0
1,0
1,5
2,0
2,5
3,0
V
V
Vctr
Vctr
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 8/20
CGB240B Datasheet
Typical Device Performance for Bluetooth Reference Design (cont.)
Output Power Compression POUT = f ( PIN )
Supply Current ICC = f ( TA )
PIN = +3dBm, Vcc = 3.2V
25,0
150
mA
dBm
Vcc=3.2V
20,0
140
130
120
110
100
15,0
10,0
5,0
Vcc=2.8V
0,0
-20,0
-15,0
-10,0
-5,0
0,0
5,0
Deg C
80
-40
-20
0
20
40
60
dBm
Input Power Pin
Ambient Temperature Ta
Output Power POUT = f ( TA )
PIN = +3dBm
Small-Signal Gain S21 = f ( TA )
PIN = -10 dBm, Vcc = 3.2V
25
30
dB
dBm
24
23
22
21
20
28
26
24
22
20
Deg C
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Deg C
Ambient Temperature Ta
Ambient Temperature Ta
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 9/20
CGB240B Datasheet
Pinning
1
5
P-TSSOP-10-2
Figure 3
CGB240B Outline
Function
Pad
1
Symbol
VC1
Supply voltage of 1st stage / interstage match
Supply voltage of 1st stage / interstage match
RF input
2
VC1
3
RFIN
N.C.
N.C.
VCTR1
VCTR2
VC2
4
5
6
Control voltage 1st stage
Control voltage 2nd stage
Supply voltage of 2nd stage / RF output
Supply voltage of 2nd stage / RF output
7
8
9
VC2
10
11
N.C.
GND
RF and DC ground (pad located on backside of package)
Heatsink. Thermal resistance between junction – pad 11: RTHCH = 100
K/W.
Functional Diagram
(1,2)
Vc1
(3)
RFin
(8,9) Vc2
(11) Gnd
(6)
(7)
Figure 4
CGB240B Functional Diagram
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 10/20
CGB240B Datasheet
Application Note 1: High Power 22dBm IEEE802.11b Power Amplifier
Vcc
R1
C5
C6
TRL2
L1
CGB240B
1
10
C1
TRL1
TRL3
C2
C3
RF In
RF Out
Vctr
5
6
11
C4
C7
Figure 5
IEEE802.11b WLAN Power Amplifier.
Part
C1
Type
Value
22 pF
22 pF
1.5 pF
2.2 pF
82 pF
1 µF
Outline
0402
0402
0603
0402
0402
0603
0402
0603
0402
Source
Part No.
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Inductor
Murata COG
Murata COG
AVX ACCU-P
Murata COG
Murata COG
Murata X7R
Murata X7R
Toko
C2
C3
06035J1R5BBT
C4
C5
C6
C7
1 nF
L1
22 nH
10 Ω
LL1608–FS
R1
Resistor
Mira
TRL1 6)
TRL2 8)
TRL3 8)
Microstrip Line
Microstrip Line
Microstrip Line
l = 2,5 mm; FR4: εr = 4.8; h = 0,2 mm; w = 0,32 mm
l = 1,0 mm; FR4: εr = 4.8; h = 0,2 mm; w = 0,32 mm
l = 2,8 mm; FR4: εr = 4.8; h = 0,2 mm; w = 0,32 mm
8) Line length measured from corner of capacitor to end of MMIC’s lead.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 11/20
CGB240B Datasheet
R
1
C
3
CGB240B
C
4
„White Dots“ =
Ground Vias
RF Out
(SMA)
RF In
(SMA)
Figure 6
Layout of CGB240B evaluation board tuned for IEEE802.11b WLAN
application (see application note 1).
Vc1 and Vc2 are connected together on the PCB.
Vctr1 and Vctr2 are connected together on the PCB.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 12/20
CGB240B Datasheet
Application Note 2: Bluetooth PA Reference Design using CGB240B
Vcc
R1
C5
C6
TRL2
L1
CGB240B
1
10
C1
TRL1
TRL3
C2
C3
RF In
RF Out
Vctr
5
6
11
C4
C7
Figure 7
Schematic of Bluetooth PA reference design using CGB240B.
Part
C1
Type
Value
22 pF
22 pF
1.5 pF
2.2 pF
10 pF
1 µF
Outline
0402
0402
0603
0402
0402
0603
0402
0603
0402
Source
Part No.
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Inductor
Murata COG
Murata COG
AVX ACCU-P
Murata COG
Murata COG
Murata X7R
Murata X7R
Toko
C2
C3 7)
06035J1R5BBT
C4
C5
C6
C7
1 nF
L1
22 nH
10 Ω
LL1608–FS
R1
Resistor
Mira
TRL1 8)
TRL2 8)
TRL3 8)
Microstrip Line
Microstrip Line
Microstrip Line
l = 2,5 mm; FR4 - εr = 4.8; h = 0,2 mm; w = 0,32 mm
l = 1,8 mm; FR4 - εr = 4.8; h = 0,2 mm; w = 0,32 mm
l = 4,0 mm; FR4 - εr = 4.8; h = 0,2 mm; w = 0,32 mm
7) Cost optimization might take place by using lower-Q AVX-CU capacitors instead of the AccuP
version. This will lead to better h2 performance, however resulting in a loss of about 2% PAE.
8) Line length measured from corner of capacitor to end of MMIC’s lead.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 13/20
CGB240B Datasheet
R
1
C
3
CGB240B
C
4
„White Dots“ =
Ground Vias
RF Out
(SMA)
Figure 8
Layout of CGB240B evaluation board using TRL matching
(see application note 2).
Vc1 and Vc2 are connected together on the PCB.
Vctr1 and Vctr2 are connected together on the PCB.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 14/20
CGB240B Datasheet
Application Note 3: CGB240B as Bluetooth Power Amplifier using a Lumped
Element Matching Concept
Vcc
C8
C6
L1
L4
CGB240B
L2
C5
C2
C3
1
10
C1
C4
L3
RF In
RF Out
5
6
11
C7
Figure 9
CGB240B Bluetooth amplifier using lumped element matching.
Part
C1
C2
C3
C4
C5
C6
C7
C8
L1
Type
Value
22 pF
22 pF
1.5 pF
2.0 pF
82 pF
0.1 µF
1 nF
Outline Source
Part No.
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Cer. Capacitor
Inductor
0402
0402
0603
0402
0402
0603
0402
0603
0603
0402
0402
0603
0402
Murata COG
Murata COG
AVX ACCU-P
Murata COG
Murata COG
Murata X7R
Murata X7R
Murata X7R
Toko
06035J1R5BBT
0.1 µF
22 nH
1.0 nH
1.0 nH
22 nH
0 Ω
LL1005–FH22NJ
0402CS-1N0X_BG
0402CS-1N0X_BG
LL1005–FH22NJ
L2
Inductor
Coilcraft
L3
Inductor
Coilcraft
L4
Inductor
Toko
R1
Jumper
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 15/20
CGB240B Datasheet
C
3
CGB240B
C
4
„White Dots“ =
Ground Vias
RF In
RF Out
(SMA)
(SMA)
Figure 10 Bluetooth PA with lumped element matching
(see application note 3).
A the discrete matching concept shown in figure 10 uses no transmission lines but
only discrete components to provide device matching.
The use of a discrete matching concept saves PCB space an makes the design more
tolerant towards variations of the PCB’s ε , but will lead to a lower output power (typ.
r
0.3 dB lower) and higher BOM cost.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 16/20
CGB240B Datasheet
Description of P-TSSOP-10-2 Package
In order to ensure maximum mounting yield and optimal reliability, special soldering
conditions apply in volume production. Please ask for our information brochure on
details or download the related document (TSSOP10_Soldering_Version01.pdf) from
our website.
The P-TSSOP-10-2 is a level 3 package. International standards for handling this
type of package are described in the JEDEC standard J-STD-033 „STANDARD FOR
HANDLING, PACKING, SHIPPING AND USE OF MOISTURE/REFLOW SENSITIVE
SURFACE-MOUNT DEVICES“, published May-1999. The original document is
available from the JEDEC website www.jedec.org .
MSL Rating: 1/260C
Pb Free
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 17/20
CGB240B Datasheet
Part Marking:
Part Orientation on Reel:
Ordering Information:
Type
Marking
Ordering Code
Package
CGB240B
CGB240B
t.b.d.
P-TSSOP-10-2
ESD: Electrostatic discharge sensitive device
Observe handling precautions!
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 18/20
CGB240B Datasheet
Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829
Munich.
copyright TriQuint Semiconductor GmbH 2003. All Rights Reserved.
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery, and prices please contact the Offices of TriQuint
Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives
worldwide.
Due to technical requirements components may contain dangerous substances. For information
on the type in question please contact your nearest TriQuint Semiconductors Office.
For More Information, Please Visit www.triquint.com
Rev 1.3, July 14th, 2003
pg. 19/20
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