TC1101 [TRANSCOM]
Low Noise and Medium Power GaAs FETs; 低噪声和中等功率GaAs场效应管
| 型号： | TC1101 |
| 厂家： | 
TRANSCOM, INC. |
| 描述： | Low Noise and Medium Power GaAs FETs |
| 文件： | 总5页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC1101
REV6_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
ꢀ Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
ꢀ High Associated Gain: Ga = 12 dB Typical at 12 GHz
ꢀ High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
ꢀ Breakdown Voltage: BVDGO ≥ 9 V
PHOTO ENLARGEMENT
ꢀ Lg = 0.25 µm, Wg = 160 µm
ꢀ All-Gold Metallization for High Reliability
ꢀ Tight Vp ranges control
ꢀ High RF input power handling capability
ꢀ 100 % DC Tested
DESCRIPTION
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier applications including a wide range of commercial and
military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated
for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
NF
Conditions
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
MIN
TYP
0.5
12
MAX
UNIT
dB
0.7
Ga
10
17.5
14
dB
P1dB Output Power at 1dB Gain Compression point, f = 12GHz VDS = 6 V, IDS = 25 mA
GL Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 25 mA
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
18.5
15
dBm
dB
48
mA
gm
VP
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
55
mS
-1.0*
12
Volts
Volts
°C/W
BVDGO Drain-Gate Breakdown Voltage at IDGO =0.08 mA
Rth Thermal Resistance
Note: * For the tight control of the pinch-off voltage . TC1101’s are divided into 3 groups:
9
225
(1) TC1101P0710 : Vp = -0.7V to -1.0V (2) TC1101P0811 : Vp = -0.8V to -1.1V (3) TC1101P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 2 V, IDS = 10 mA
Symbol
Parameter
Rating
Frequency NFopt
GA
(dB)
19.8
17.5
15.6
13.9
13.1
12.4
11.7
11.1
10.6
Γopt
Rn/50
(GHz)
2
(dB)
0.38
0.40
0.42
0.45
0.50
0.55
0.64
0.78
0.95
MAG
0.99
0.90
0.82
0.76
0.69
0.63
0.56
0.45
0.34
ANG
4
VDS
VGS
IDS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
7.0 V
-3.0 V
IDSS
0.48
0.40
0.37
0.34
0.32
0.30
0.28
0.26
0.24
4
9
6
18
29
43
55
65
76
90
IGS
Gate Current
160 µA
18 dBm
8
Pin
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
10
12
14
16
18
PT
250 mW
TCH
TSTG
175 °C
- 65 °C to +175 °C
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
1/5
Fax: 886-6-5051602
TC1101
REV6_20070502
CHIP DIMENSIONS
290 12
D
250 12
S
S
G
Units: Micrometers
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 60
Chip Thickness: 100
TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA
0
.
1
0
9
8
.
0
Mag Max
0.15
Swp Max
18 GHz
Swp Max
18GHz
5
7
6
1
0
6
.
0
0
0
1
5
.
2
2
5
4
0
4
.
1
3
5
0
.
0
3
S11
0
3
0
.
4
1
0
.
5
0
2
5
.
0
5
1
0
.
0
1
1
6
0
.
0
1
5
2
.
0
4
.
0
6
.
0
8
.
0
0
.
1
0
.
2
0
.
3
0 0
. .
4 5
0
0
-180
0
.
0
-
1
5
1
-
5
6
1
-
2
.
0
.
0
0
-
5
-
S12
-
3
.
0
4
-
0
5
0
1
-
.
4
3
-
.
-
4
0
5
5
-
3
0
1
.
-
6
6
-
2
.
0
-
0
0
2
-
7
5
8
.
0
.
1
-
-
9
0
1
5
-
0.075
Per Div
Swp Min
2 GHz
Swp Min
2GHz
-
0
0
1
-
-
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
2/5
Fax: 886-6-5051602
TC1101
REV6_20070502
0
.
1
0
9
Mag Max
5
Swp Max
18 GHz
8
.
0
Swp Max
18GHz
5
7
1
6
0
6
0
.
0
0
1
5
.
2
2
5
4
0
4
.
1
3
5
0
0
.
3
0
S22
3
0
.
4
.
5
1
5
0
0
2
.
0
5
1
0
.
0
1
6
1
5
0
.
0
1
2
.
0
4
.
0
6
.
0
8
.
0
0
.
1
0
.
2
0
.
3
0 0
. .
4 5
0
0
-180
-
1
0
.
0
1
-
5
5
6
1
-
S21
2
.
0
.
0
0
-
-
5
3
-
0
.
0
4
-
5
1
-
0
-
.
3
4
4
.
-
5
5
0
3
-
1
-
6
0
-
.
0
6
2
0
2
-
7
5
.
-
-
5
1
0
8
.
1
Per Div
Swp Min
2 GHz
0
.
1
-
-
0
-
9
0
Swp Min
2GHz
1
-
0
-
FREQUENCY
S11
S21
S12
S22
(GHz)
2
MAG
0.9879
0.9740
0.9564
0.9364
0.9152
0.8939
0.8732
0.8536
0.8354
0.8188
0.8037
0.7901
0.7780
0.7671
0.7575
0.7491
0.7416
ANG
-20.21
-29.96
-39.31
-48.20
-56.56
-64.40
-71.72
-78.52
-84.84
-90.72
-96.18
MAG
4.3485
4.2452
4.1126
3.9594
3.7943
3.6242
3.4546
3.2894
3.1312
2.9813
2.8406
2.7092
2.5868
2.4731
2.3676
2.2697
2.1788
ANG
162.66
154.28
146.20
138.48
131.15
124.22
117.66
111.45
105.57
99.99
MAG
0.0296
0.0434
0.0560
0.0674
0.0774
0.0861
0.0937
0.1002
0.1058
0.1106
0.1148
0.1183
0.1214
0.1241
0.1264
0.1284
0.1302
ANG
77.08
70.91
65.04
59.53
54.40
49.66
45.29
41.27
37.57
34.16
31.00
28.08
25.36
22.82
20.44
18.20
16.08
MAG
0.7367
0.7235
0.7068
0.6877
0.6676
0.6472
0.6276
0.6090
0.5919
0.5764
0.5627
0.5506
0.5402
0.5313
0.5239
0.5179
0.5132
ANG
-11.76
-17.37
-22.68
-27.66
-32.28
-36.54
-40.46
-44.06
-47.37
-50.43
-53.28
-55.93
-58.41
-60.76
-62.99
-65.12
-67.16
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
94.68
-101.25
-105.98
-110.39
-114.51
-118.37
-121.99
89.60
84.74
80.07
75.57
71.21
66.99
* The data does not include gate, drain and source bond wires.
TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 6 V, IDS = 25 mA
0
.
1
0
9
Mag Max
0.1
Swp Max
18 GHz
8
.
0
Swp Max
18GHz
5
7
1
0
5
6
0
6
.
0
0
1
.
2
2
5
4
0
4
.
1
3
5
0
.
0
3
S11
0
3
0
.
4
1
0
.
5
0
2
.
5
0
5
1
0
.
0
1
1
6
5
0
.
0
1
2
.
0
4
.
0
6
.
0
8
.
0
0
.
1
0
.
2
0
.
3
0 0
. .
4 5
0
0
-180
0
.
0
1
-
-
1
5
5
6
2
.
1
-
0
.
0
0
-
5
-
S12
-
.
3
4
0
-
0
5
0
1
.
-
4
3
.
-
-
0
4
-
5
5
0
3
.
1
6
-
2
-
.
-
0
6
0
0
8
.
2
-
7
5
0
.
1
-
-
Swp Min
2GHz
-
9
0
1
5
0
0.01
Per Div
Swp Min
2 GHz
0
-
-
1
-
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
3/5
Fax: 886-6-5051602
TC1101
REV6_20070502
0
.
1
0
9
Mag Max
6
Swp Max
18 GHz
8
.
0
Swp Max
18GHz
5
7
1
0
5
0
6
6
.
0
1
0
.
2
2
5
4
0
4
.
1
3
5
0
0
.
3
0
S22
3
0
.
4
1
5
0
.
5
0
2
.
0
5
1
0
.
0
1
6
1
5
0
.
0
1
2
.
0
4
.
0
6
.
0
8
.
0
0
.
1
0
.
2
0
.
3
0 0
. .
4 5
0
0
-180
0
.
0
1
-
1
5
-
5
6
1
-
S21
2
.
0
.
0
0
-
5
-
-
3
0
.
4
0
-
5
1
0
-
.
-
4
3
-
4
.
0
5
5
3
-
0
1
-
6
.
-
6
0
2
.
0
2
-
7
5
-
0
8
.
-
9
0
5
1
0
.
1
-
2
Per Div
Swp Min
2 GHz
-
-
0
Swp Min
2GHz
0
1
-
-
FREQUENCY
S11
S21
S12
S22
(GHz)
2
MAG
ANG
MAG
5.2729
5.1264
4.9406
4.7291
4.5045
4.2765
4.0524
3.8370
3.6330
3.4418
3.2639
3.0990
2.9466
2.8058
2.6758
2.5557
2.4446
ANG
161.97
153.31
145.03
137.18
129.78
122.83
116.31
110.19
104.41
98.96
MAG
0.0218
0.0318
0.0408
0.0488
0.0558
0.0618
0.0669
0.0712
0.0749
0.0781
0.0807
0.0830
0.0850
0.0867
0.0882
0.0895
0.0906
ANG
76.68
70.37
64.44
58.94
53.89
49.28
45.10
41.30
37.85
34.72
31.86
29.24
26.83
24.60
22.54
20.62
18.82
MAG
0.7718
0.7586
0.7422
0.7239
0.7050
0.6865
0.6690
0.6530
0.6386
0.6260
0.6150
0.6057
0.5978
0.5913
0.5861
0.5821
0.5790
ANG
-10.24
-15.08
-19.62
-23.82
-27.69
-31.23
-34.49
-37.49
-40.28
-42.90
-45.37
-47.73
-49.99
-52.18
-54.32
-56.41
-58.46
0.9861
0.9704
0.9507
0.9288
0.9059
0.8834
0.8618
0.8418
0.8234
0.8068
0.7919
0.7786
0.7668
0.7564
0.7471
0.7389
0.7316
-22.03
-32.59
-42.66
-52.16
-61.05
-69.32
-76.97
-84.05
-90.59
-96.63
-102.23
-107.40
-112.21
-116.69
-120.86
-124.76
-128.41
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
93.79
88.86
84.16
79.65
75.31
71.12
67.06
*The data does not include gate, drain and source bond wires.
SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
4/5
Fax: 886-6-5051602
TC1101
REV6_20070502
SCHEMATI
PARAMETERS
Lg
Cgd
Ld
Rd
Rg
0.047 nH
1.460 Ohm
0.207 pF
1.290 Ohm
0.001 nH
0.068 pF
Lg
Rg
Cgs
Ri
Rs
Ls
Gm
Cds
Cgs
Ri
Cds
Rds
Rd
Ld
Rds
T
3.680 Ohm
0.027 pF
321.5 Ohm
1.525 Ohm
0.038 nH
Cgd
Gm
T
Rs
54.80 mS
3.340 psec
Ls
SMALL SIGNAL MODEL, VDS = 6 V, IDS = 25 mA
SCHEMATI
PARAMETERS
Lg
Cgd
Ld
Rd
Rg
0.047 nH
1.460 Ohm
0.254 pF
1.250 Ohm
0.001 nH
0.067 pF
Lg
Rg
Cgs
Ri
Rs
Ls
Gm
Cds
Cgs
Ri
Cds
Rds
Rd
Ld
Rds
T
5.910 Ohm
0.019 pF
377.8 Ohm
1.525 Ohm
0.038 nH
Cgd
Gm
T
Rs
66.00 mS
3.640 psec
Ls
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
5/5
Fax: 886-6-5051602
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