TC1101V [TRANSCOM]
Low Noise and Medium Power GaAs FETs; 低噪声和中等功率GaAs场效应管
| 型号： | TC1101V |
| 厂家： | 
TRANSCOM, INC. |
| 描述： | Low Noise and Medium Power GaAs FETs |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC1101V
REV6_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
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Via holes for source grounding
PHOTO ENLARGEMENT
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BVDGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
DESCRIPTION
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It
can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including
a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality.
All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
MIN
TYP
0.5
13
MAX
UNIT
dB
Symbol
NF
Conditions
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
Output Power at 1dB Gain Compression Point, f = 12GHz, VDS = 6 V, IDS = 25 mA
Linear Power Gain, f = 12GHz, VDS = 6 V, IDS = 25 mA
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
0.7
Ga
11
17.5
14
dB
P1dB
GL
18.5
15
dBm
dB
IDSS
gm
48
mA
55
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
-1.0*
12
Volts
Volts
°C/W
BVDGO Drain-Gate Breakdown Voltage at IDGO =0.08 mA
Rth Thermal Resistance
9
180
Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups:
(1)TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V
(3)TC1101VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 2 V, IDS = 10 mA
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
Γopt
MAG
Symbol
VDS
VGS
IDS
Parameter
Rating
7.0 V
Rn/50
ANG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
2
4
0.34
0.36
0.38
0.42
0.48
0.54
0.63
0.76
0.94
21.2
19.3
17.5
15.9
14.4
13.2
12.7
12.5
12.2
0.97
14
0.63
0.54
0.42
0.30
0.18
0.14
0.12
0.17
0.36
-3.0 V
IDSS
0.83
0.68
0.51
0.38
0.28
0.25
0.31
0.49
30
50
6
IGS
Gate Current
160 µA
18 dBm
250 mW
8
75
Pin
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
10
12
14
16
18
106
145
-168
-111
-45
PT
TCH
TSTG
175 C
°
- 65 C to +175 C
° °
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
1/2
Fax: 886-6-5051602
TC1101V
REV6_20070502
CHIP DIMENSIONS
2906 12
Units: Micrometers
Chip Thickness: 55
D
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 60
2506 12
S
S
G
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C ±5°C ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermocompression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force :
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
2/2
Fax: 886-6-5051602
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