TPD4123AK [TOSHIBA]

Intelligent Power Device High Voltage Monolithic Silicon Power IC; 智能功率器件高压硅单片电源IC
TPD4123AK
型号: TPD4123AK
厂家: TOSHIBA    TOSHIBA
描述:

Intelligent Power Device High Voltage Monolithic Silicon Power IC
智能功率器件高压硅单片电源IC

高压
文件: 总23页 (文件大小:345K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TPD4123AK  
TOSHIBA Intelligent Power Device  
High Voltage Monolithic Silicon Power IC  
TPD4123AK  
The TPD4123AK is a DC brush less motor driver using high  
voltage PWM control. It is fabricated by high voltage SOI process.  
It is three-shunt resistor circuit for current sensing. It contains  
level shift high-side driver, low-side driver, IGBT outputs, FRDs  
and protective functions for under voltage protection circuits and  
thermal shutdown circuit. It is easy to control a DC brush less  
motor by just putting logic inputs from a MPU or motor controller  
to the TPD4123AK.  
HDIP26-P-1332-2.00  
Weight: 3.8 g (typ.)  
Features  
High voltage power side and low voltage signal side terminal are separated.  
It is the best for current sensing in three shunt resistance.  
Bootstrap circuit gives simple high-side supply.  
Bootstrap diodes are built in.  
A dead time can be set as a minimum of 1.4μs, and it is the best for a Sine-wave from drive.  
3-phase bridge output using IGBTs.  
FRDs are built in.  
Included under voltage protection and thermal shutdown.  
The regulator of 7V (typ.) is built in.  
Package: 26-pin DIP.  
This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that  
the environment is protected against electrostatic discharge.  
1
2008-05-14  
TPD4123AK  
Pin Assignment  
Marking  
Lot Code  
(Weekly code)  
TPD4123AK  
Part No. (or abbreviation code)  
2
2008-05-14  
TPD4123AK  
Block Diagram  
V
BSU  
BSV  
BSW  
18  
CC  
15  
21  
24  
23  
V
BB  
7 V  
V
REG  
13  
Regulator  
Under-  
voltage  
Under-  
voltage  
Under-  
voltage  
Protection Protection Protection  
Under-  
voltage  
Protection  
High-side Level  
Shift Driver  
HU  
HV  
HW  
LU  
4
5
6
U
V
17  
22  
Input Control  
Thermal Shutdown  
W
7
8
25  
LV  
Low-side  
Driver  
LW  
9
SD  
10  
11  
IS3  
IS2  
26  
20  
19  
DIAG  
IS1  
GND  
1/16  
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2008-05-14  
TPD4123AK  
Pin Description  
Pin No.  
Symbol  
Pin Description  
1
2
3
GND  
NC  
Ground pin.  
Unused pin, which is not connected to the chip internally.  
Unused pin, which is not connected to the chip internally.  
NC  
The control terminal of IGBT by the high side of U. It turns off less than 1.5V.  
It turns on more than 2.5V.  
The control terminal of IGBT by the high side of V. It turns off less than 1.5V.  
It turns on more than 2.5V.  
The control terminal of IGBT by the high side of W. It turns off less than 1.5V.  
It turns on more than 2.5V.  
The control terminal of IGBT by the low side of U. It turns off less than 1.5V.  
It turns on more than 2.5V.  
4
5
6
7
8
HU  
HV  
HW  
LU  
The control terminal of IGBT by the low side of V. It turns off less than 1.5V.  
It turns on more than 2.5V.  
LV  
The control terminal of IGBT by the low side of W. It turns off less than 1.5V.  
It turns on more than 2.5V.  
9
LW  
SD  
10  
11  
Input pin of external protection. (“L” active, It doesn't have hysteresis)  
With the diagnostic output terminal of open drain, a pull-up is carried out by resistance.  
It turns on at the time of unusual.  
DIAG  
NC  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
Unused pin, which is not connected to the chip internally.  
7V regulator output pin.  
V
REG  
NC  
Unused pin, which is not connected to the chip internally.  
Control power supply pin. (15V typ.)  
Ground pin.  
V
CC  
GND  
U
U-phase output pin.  
BSU  
IS1  
IS2  
BSV  
V
U-phase bootstrap capacitor connecting pin.  
U-phase IGBT emitter and FRD anode pin.  
V-phase IGBT emitter and FRD anode pin.  
V-phase bootstrap capacitor connecting pin.  
V-phase output pin.  
V
High-voltage power supply input pin.  
W-phase bootstrap capacitor connecting pin.  
W-phase output pin.  
BB  
BSW  
W
IS3  
W-phase IGBT emitter and FRD anode pin.  
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2008-05-14  
TPD4123AK  
Equivalent Circuit of Input Pins  
Internal circuit diagram of HU, HV, HW, LU, LV, LW input pins  
2 kΩ  
2 kΩ  
2 kΩ  
HU/HV/HW  
LU/LV/LW  
To internal circuit  
6.5 V  
6.5 V  
6.5 V  
6.5 V  
Internal circuit diagram of SD pin  
V
REG  
2 kΩ  
2 kΩ  
2 kΩ  
SD  
To internal circuit  
6.5 V  
6.5 V  
6.5 V  
6.5 V  
Internal circuit diagram of DIAG pin  
DIAG  
To internal circuit  
26 V  
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2008-05-14  
TPD4123AK  
Timing Chart  
HU  
HV  
HW  
LU  
LV  
Input Voltage  
LW  
VU  
Output voltage VV  
VW  
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2008-05-14  
TPD4123AK  
Truth Table  
Input  
LU  
L
High side  
Low side  
DIAG  
Mode  
HU  
H
H
L
HV HW  
LV  
H
L
LW  
L
SD U phase V phase W phase U phase V phase W phase  
Normal  
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
L
*
L
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
L
L
L
L
H
H
*
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
ON  
OFF  
OFF  
ON  
OFF  
OFF  
OFF  
OFF  
ON  
OFF  
OFF  
OFF  
ON  
ON  
OFF  
ON  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
L
H
H
L
ON  
OFF  
OFF  
OFF  
OFF  
ON  
L
L
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
L
H
H
L
L
ON  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
L
L
L
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
L
H
H
L
L
ON  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
Thermal shutdown  
VCC Under-voltage  
VBS Under-voltage  
H
H
L
L
L
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
L
H
H
L
ON  
L
L
ON  
L
H
H
L
L
ON  
L
L
L
ON  
L
H
H
L
L
ON  
H
H
L
L
L
ON  
L
H
H
L
ON  
L
L
ON  
L
H
H
L
L
ON  
L
L
L
ON  
L
H
H
L
L
ON  
H
H
L
L
L
OFF  
OFF  
OFF  
OFF  
OFF  
OFF  
ON  
L
H
H
L
OFF  
OFF  
OFF  
OFF  
ON  
L
L
ON  
L
H
H
L
L
OFF  
OFF  
OFF  
OFF  
L
L
L
ON  
L
H
*
L
OFF  
OFF  
SD  
*
*
*
OFF  
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2008-05-14  
TPD4123AK  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
V
500  
V
V
BB  
Power supply voltage  
V
18  
CC  
Output current (DC)  
Output current (pulse)  
Input voltage  
I
1
2
A
OUT  
I
A
OUTp  
V
-0.5 to 7  
50  
V
IN  
V
current  
I
mA  
W
REG  
REG  
Power dissipation (Tc = 25°C)  
Operating temperature  
Junction temperature  
P
23  
C
T
-40 to 135 °C  
150 °C  
-55 to 150 °C  
jopr  
T
j
Storage temperature  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
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2008-05-14  
TPD4123AK  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
50  
13.5  
280  
15  
450  
16.5  
0.5  
5
BB  
CC  
BB  
CC  
Operating power supply voltage  
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
= 450 V  
= 15 V  
BB  
CC  
BS  
BS  
mA  
I
0.9  
230  
200  
Current dissipation  
I
= 15 V, high side ON  
= 15 V, high side OFF  
410  
370  
BS (ON)  
μA  
I
BS (OFF)  
V
= “H”, V  
CC  
= 15 V  
= 15 V  
2.5  
IH  
IN  
Input voltage  
SD input voltage  
Input current  
V
V
V
= “L” , V  
CC  
1.5  
IL  
IN  
V
SD  
I
IH  
= 15 V  
2.5  
CC  
= 5 V  
= 0 V  
= 5 V  
= 0 V  
150  
100  
100  
150  
3
IN  
μA  
I
IL  
IN  
I
SDH  
IN  
SD Input current  
μA  
V
I
SDL  
IN  
V
H
= 15 V, I = 0.5 A, high side  
2.4  
2.4  
1.5  
1.5  
0.9  
7
CEsat  
CC  
CC  
C
Output saturation voltage  
FRD forward voltage  
V
L
= 15 V, I = 0.5 A, low side  
3
CEsat  
V H  
C
I
I
I
= 0.5 A, high side  
= 0.5 A, low side  
= 500 μA  
2.0  
2.0  
1.2  
7.5  
185  
F
F
F
F
V
V L  
F
BSD forward voltage  
V
V
V
F (BSD)  
Regulator voltage  
V
V
V
V
= 15 V, I = 30 mA  
6.5  
135  
REG  
CC  
CC  
CC  
O
Thermal shutdown temperature  
Thermal shutdown hysteresis  
TSD  
= 15 V  
= 15 V  
°C  
°C  
V
ΔTSD  
50  
V
V
V
V
under voltage protection  
V
V
UVD  
10  
10.5  
8
11  
12  
CC  
CC  
BS  
BS  
CC  
CC  
under voltage protection recovery  
under voltage protection  
UVR  
UVD  
UVR  
11.5  
9
12.5  
9.5  
10.5  
0.5  
3
V
V
V
V
BS  
BS  
under voltage protection recovery  
8.5  
9.5  
V
DIAG saturation voltage  
Output on delay time  
Output off delay time  
Dead time  
V
I
= 5 mA  
DIAG  
V
DIAGsat  
t
t
V
V
V
V
= 280 V, V  
= 280 V, V  
= 280 V, V  
= 280 V, V  
= 15 V, I = 0.5 A  
1.4  
1.0  
μs  
μs  
μs  
ns  
on  
BB  
BB  
BB  
BB  
CC  
CC  
CC  
CC  
C
= 15 V, I = 0.5 A  
3
off  
C
t
= 15 V, I = 0.5 A  
1.4  
dead  
C
FRD reverse recovery time  
t
= 15 V, I = 0.5 A  
200  
rr  
C
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2008-05-14  
TPD4123AK  
Application Circuit Example  
15V  
V
CC  
15  
18  
21  
24  
23  
BSU  
+
C
C
5
4
BSV  
BSW  
V
BB  
7 V  
Under-  
voltage  
Under-  
voltage  
Under-  
voltage  
13  
Regulator  
V
REG  
+
Protection Protection Protection  
Under-  
voltage  
C
7
C
6
High-side  
Level Shift  
Driver  
C
C C  
2 3  
1
Protection  
C
4
5
6
7
8
9
HU  
HV  
HW  
LU  
17  
22  
25  
Thermal  
U
V
Control IC  
or  
Input Control  
M
Shutdown  
Microcomputer  
W
Low-side  
Driver  
LV  
LW  
IS3  
26  
20  
19  
11  
10  
DIAG  
R
1
IS2  
IS1  
SD  
R
R
R
R
2
1/16  
GND  
10  
2008-05-14  
TPD4123AK  
External Parts  
Typical external parts are shown in the following table.  
Part  
Typical  
Purpose  
Remarks  
C , C , C  
25 V/2.2 μF  
25 V/10 μF  
25 V/0.1 μF  
25 V/1 μF  
25 V/1000 pF  
5.1 kΩ  
Bootstrap capacitor  
(Note 1)  
(Note 2)  
(Note 2)  
(Note 2)  
(Note 2)  
(Note 3)  
1
2
4
5
6
7
1
2
3
C
C
C
C
R
R
V
power supply stability  
CC  
V
for surge absorber  
CC  
V
power supply stability  
REG  
V
for surge absorber  
REG  
DIAG pin pull-up resistor  
SD pin pull-up resistor  
10 kΩ  
Note 1: The required bootstrap capacitance value varies according to the motor drive conditions. The capacitor is  
biased by V and must be sufficiently derated for it.  
CC  
Note 2: When using this product, adjustment is required in accordance with the use environment. When mounting,  
place as close to the base of this product leads as possible to improve the ripple and noise elimination.  
Note 3: The DIAG pin is open drain. If not using the DIAG pin, connect to the GND.  
Handling precautions  
(1) Please control the input signal in the state to which the V  
voltage is steady. Both of the order of the  
CC  
V
BB  
power supply and the V  
power supply are not cared about either.  
CC  
Note that if the power supply is switched off as described above, this product may be destroyed if the  
current regeneration route to the V power supply is blocked when the V line is disconnected by a  
BB  
BB  
relay or similar while the motor is still running.  
(2) The excess voltage such as the voltage surge which exceed the maximum rating is added, for example,  
may destroy the circuit. Accordingly, be careful of handling this product or of surge voltage in its  
application environment.  
11  
2008-05-14  
TPD4123AK  
Description of Protection Function  
(1) Under voltage protection  
This product incorporates under voltage protection circuits to prevent the IGBT from operating in  
unsaturated mode when the V voltage or the V voltage drops.  
CC  
BS  
When the V  
power supply falls to this product internal setting V UVD (=11 V typ.), all IGBT outputs  
CC  
CC  
shut down regardless of the input. This protection function has hysteresis. When the V  
power supply  
CC  
reaches 0.5 V higher than the shutdown voltage (V UVR (=11.5 V typ.)), this product is automatically  
CC  
restored and the IGBT is turned on again by the input. DIAG output is reversed at the time of V  
CC  
under-voltage protection. When the V  
reversed.  
power supply is less than 7 V, DIAG output isn't sometimes  
CC  
When the V supply voltage drops V UVD (=9 V typ.), the high-side IGBT output shuts down.  
BS  
BS  
When the V  
supply voltage reaches 0.5 V higher than the shutdown voltage (V UVR (=9.5 V typ.)), the  
BS  
BS  
IGBT is turned on again by the input signal.  
(2) Thermal shutdown  
This product incorporates a thermal shutdown circuit to protect itself against the abnormal state when its  
temperature rises excessively.  
When the temperature of this chip rises to the internal setting TSD due to external causes or internal heat  
generation, all IGBT outputs shut down regardless of the input. This protection function has hysteresis  
ΔTSD (=50°C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is automatically restored and  
the IGBT is turned on again by the input.  
Because the chip contains just one temperature detection location, when the chip heats up due to the IGBT,  
for example, the differences in distance from the detection location in the IGBT (the source of the heat)  
cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise  
higher than the thermal shutdown temperature when the circuit started to operate.  
(3) SD pin  
SD pin is the input signal pin to shut down the internal output IGBT. Output of all IGBT is shuted down after  
delay times (2 μs typ.) when "L" signal is inputed to the SD pin from external circuit (MCU etc.). It is  
possible to shut down IC when overcurrent and others is detected by external circuit. Shut down state is  
released by all of IC input signal "L". At open state of SD pin, shut down function can not operate.  
Timing Chart of Under voltage protection and SD Function  
SD  
LIN  
HIN  
VBS  
VCC  
LO  
HO  
ton  
toff  
ton  
toff  
DIAG  
Note: The above timing chart is considering the delay time  
Safe Operating Area  
1.0  
0
450  
0
Power supply voltage V (V)  
BB  
Figure 1 SOA at Tj = 135 °C  
Note 1: The above safe operating areas are Tj = 135 °C (Figure 1).  
12  
2008-05-14  
TPD4123AK  
V
H – T  
V
L – T  
CEsat j  
CEsat  
j
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
V
= 15 V  
V
= 15 V  
CC  
I
= 700 mA  
= 500 mA  
CC  
I
I
= 700 mA  
C
C
C
I
I
C
C
= 500 mA  
= 300 mA  
= 300 mA  
I
C
50  
0
50  
100  
150  
150  
18  
50  
0
50  
100  
150  
150  
18  
Junction temperature  
T
j
(°C)  
Junction temperature  
T
j
(°C)  
V H – T  
F
V L – T  
F
j
j
1.8  
1.6  
1.4  
1.2  
1.0  
1.8  
1.6  
1.4  
1.2  
1.0  
I
I
= 700 mA  
= 500 mA  
F
F
I
= 700 mA  
= 500 mA  
F
F
I
I
= 300 mA  
F
I
= 300 mA  
F
50  
0
50  
100  
50  
0
50  
100  
Junction temperature  
T
j
(°C)  
Junction temperature  
T
j
(°C)  
I
– V  
V
– V  
REG CC  
CC  
CC  
2.0  
1.5  
1.0  
0.5  
0
8.0  
7.5  
7.0  
6.5  
6.0  
T =40°C  
j
T =40°C  
j
T =25°C  
j
T =25°C  
j
T =135°C  
j
T =135°C  
j
I
= 30 mA  
REG  
12  
14  
16  
12  
14  
16  
Control power supply voltage  
V
(V)  
Control power supply voltage  
V
(V)  
CC  
CC  
13  
2008-05-14  
TPD4123AK  
t
– T  
t – T  
off j  
on  
j
3.0  
2.0  
1.0  
0
3.0  
2.0  
1.0  
0
V
V
= 280 V  
= 15 V  
V
V
= 280 V  
= 15 V  
BB  
CC  
BB  
CC  
I
= 0.5 A  
I
= 0.5 A  
C
C
High-side  
Low-side  
High-side  
Low-side  
50  
0
50  
100  
150  
50  
0
50  
100  
150  
Junction temperature  
T
j
(°C)  
Junction temperature  
T
j
(°C)  
V
UV – T  
V
UV – T  
BS j  
CC  
j
12.5  
12.0  
11.5  
11.0  
10.5  
10.0  
10.5  
10.0  
9.5  
V
V
UVD  
UVR  
V
V
UVD  
UVR  
CC  
BS  
BS  
CC  
9.0  
8.5  
8.0  
50  
50  
0
50  
100  
150  
0
50  
100  
150  
Junction temperature  
T
j
(°C)  
Junction temperature  
T
j
(°C)  
14  
2008-05-14  
TPD4123AK  
I
– V  
I
– V  
BS (OFF) BS  
BS (ON)  
BS  
500  
400  
300  
200  
100  
500  
400  
300  
200  
100  
T =40°C  
T =40°C  
j
j
T =25°C  
j
T =25°C  
j
T =135°C  
j
T =135°C  
j
12  
14  
16  
18  
12  
14  
16  
18  
Control power supply voltage  
V
(V)  
Control power supply voltage  
V
(V)  
BS  
BS  
Wt – T  
off  
Wt – T  
on  
j
j
50  
40  
30  
20  
10  
0
250  
200  
150  
100  
50  
I
I
I
= 700 mA  
= 500 mA  
= 300 mA  
C
C
C
I
I
= 700 mA  
C
C
= 500 mA  
= 300 mA  
I
C
0
50  
50  
0
50  
100  
150  
0
50  
100  
150  
Junction temperature  
T
j
(°C)  
Junction temperature  
T
j
(°C)  
15  
2008-05-14  
TPD4123AK  
Test Circuits  
IGBT Saturation Voltage (U-phase low side)  
0.5A  
VM  
HU = 0V  
HV = 0V  
HW = 0V  
LU = 5V  
LV = 0V  
LW = 0V  
VCC = 15V  
FRD Forward Voltage (U-phase low side)  
0.5A  
VM  
16  
2008-05-14  
TPD4123AK  
V
CC  
Current Dissipation  
IM  
VCC = 15V  
Regulator Voltage  
30mA  
VM  
VCC = 15V  
17  
2008-05-14  
TPD4123AK  
Output ON/OFF Delay Time (U-phase low side)  
IM  
U = 280V  
560Ω  
2.2μF  
HU = 0V  
HV = 0V  
HW = 0V  
LU = PG  
LV = 0V  
LW = 0V  
VCC = 15V  
90%  
10%  
LU = PG  
90%  
10%  
IM  
ton  
toff  
18  
2008-05-14  
TPD4123AK  
V
CC  
Under-voltage Protection Operating/Recovery Voltage (U-phase low side)  
U = 18V  
2kΩ  
HU = 0V  
HV = 0V  
HW = 0V  
LU = 5V  
LV = 0V  
LW = 0V  
VCC = 15V 6V  
VM  
6V 15V  
*Note: Sweeps the V  
pin voltage from 15 V and monitors the U pin voltage.  
CC  
The V  
pin voltage when output is off defines the under-voltage protection operating voltage.  
CC  
Also sweeps from 6 V to increase. The V  
protection recovery voltage.  
pin voltage when output is on defines the under voltage  
CC  
V
BS  
Under-voltage Protection Operating/Recovery Voltage (U-phase high side)  
VBB = 18V  
VM  
BSU = 15V 6V  
6V 15V  
2kΩ  
HU = 5V  
HV = 0V  
HW = 0V  
LU = 0V  
LV = 0V  
LW = 0V  
VCC = 15V  
*Note: Sweeps the BSU pin voltage from 15 V to decrease and monitors the V  
pin voltage. The BSU pin  
BB  
voltage when output is off defines the under voltage protection operating voltage. Also sweeps the  
BSU pin voltage from 6V to increase and change the HU pin voltage at 5 V0 V5 V each time. It  
repeats similarly output is on. When the BSU pin voltage when output is on defines the under  
voltage protection recovery voltage.  
19  
2008-05-14  
TPD4123AK  
V
BS  
Current Dissipation (U-phase high side)  
IM  
BSU = 15V  
HU = 0V/5V  
HV = 0V  
HW = 0V  
LU = 0V  
LV = 0V  
LW = 0V  
VCC = 15V  
20  
2008-05-14  
TPD4123AK  
Turn-On/Off Loss (low side IGBT + high side FRD)  
IM  
VBB/U = 280V  
5mH  
L
VM  
2.2μF  
HU = 0V  
HV = 0V  
HW = 0V  
LU = PG  
LV = 0V  
LW = 0V  
VCC = 15V  
Input (LU = PG)  
IGBT (C-E Voltage)  
(U-GND)  
Power Supply Current  
Wton  
Wtoff  
21  
2008-05-14  
TPD4123AK  
Package Dimensions  
HDIP26-P-1332-2.00  
Unit : mm  
Weight: 3.8 g (typ.)  
22  
2008-05-14  
TPD4123AK  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
23  
2008-05-14  

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